MURS120-M3 Datasheet

MURS120-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V
IFSM
40 A
MECHANICAL DATA
trr
25 ns
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
VF
0.71 V
TJ max.
175 °C
Package
DO-214AA (SMB)
Diode variations
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
VALUE
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
PARAMETER
MD
Device marking code
Maximum average forward rectified current at (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
UNIT
TL = 155 °C
TL = 145 °C
IF(AV)
1.0
2.0
A
IFSM
40
A
TJ, TSTG
-65 to +175
°C
Revision: 20-Feb-15
Document Number: 89485
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS120-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
Maximum instantaneous forward voltage
IF = 1.0 A
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
Maximum instantaneous reverse current
at rated DC blocking voltage
TJ = 150 °C
SYMBOL
VF (1)
IR (1)
VALUE
0.875
0.71
2.0
UNIT
V
μA
50
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
35
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
25
ns
SYMBOL
VALUE
UNIT
RJL
13
°C/W
Note
(1) Pulse test: t = 300 μs, duty cycle 2 %
p
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MURS120-M3/52T
0.096
52T
750
7" diameter plastic tape and reel
MURS120-M3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
Revision: 20-Feb-15
Document Number: 89485
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS120-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
100
Instantaneous Reverse Leakage
Current (µA)
Average Forward Rectified Current (A)
6.0
5.0
4.0
3.0
2.0
1.0
0
25
50
75
100
125
150
TJ = 100 °C
0.1
TJ = 25 °C
0.01
175
0
20
40
80
60
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
50
1000
Junction Capacitance (pF)
Peak Forward Surge Current (A)
1
0.001
0
40
30
20
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0
1
10
0.1
100
Number of Cycles at 60 Hz
100
10
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
0.2
TJ = 25 °C
0.4
0.6
0.8
1.0
1.2
1
10
100
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Instantaneous Forward Current (A)
TJ = 175 °C
10
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Junction Capacitance

















Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 20-Feb-15
Document Number: 89485
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MURS120-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 20-Feb-15
Document Number: 89485
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000