VS-60CTQ150PbF, VS-60CTQ150-N3 Datasheet

VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-220AB
Anode
• Guard ring for enhanced ruggedness and long
term reliability
Anode
2
1 Common 3
cathode
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2 x 30 A
VR
150 V
VF at IF
0.72 V
IRM max.
20 mA at 125 °C
TJ max.
175 °C
Diode variation
Common cathode
EAS
0.4 mJ
DESCRIPTION
The VS-60CTQ150... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
60
A
Rectangular waveform
VRRM
150
V
IFSM
tp = 5 μs sine
710
A
VF
30 Apk, TJ = 125 °C (typical, per leg)
0.69
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-60CTQ150PbF
VS-60CTQ150-N3
UNITS
150
150
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 137 °C, rectangular waveform
VALUES
UNITS
30
per leg
60
per device
Following any rated
load condition and
with rated VRRM
applied
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.9 A, L = 1 mH
0.4
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.9
A
Repetitive avalanche current per leg
Revision: 02-Jul-12
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
710
270
Document Number: 94240
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VS-60CTQ150PbF, VS-60CTQ150-N3
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ELECTRICAL SPECIFICATIONS
SYMBOL
PARAMETER
TEST CONDITIONS
30 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
60 A
30 A
TJ = 125 °C
60 A
Maximum reverse leakage current per leg
See fig. 2
IRM
Typical junction capacitance per leg
CT
Typical series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
TYP
MAX.
0.83
0.88
UNITS
0.98
1.09
0.67
0.72
0.82
0.87
7
75
μA
7.2
20
mA
-
650
pF
V
Measured lead to lead 5 mm from package body
-
7.5
nH
Rated VR
-
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
SYMBOL
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
TEST CONDITIONS
TJ, TStg
per leg
per package
Typical thermal resistance,
case to heatsink
RthJC
RthCS
DC operation
See fig. 4
Marking device
Revision: 02-Jul-12
UNITS
- 55 to 175
°C
1.2
DC operation
0.6
Mounting surface, smooth and greased
0.25
°C/W
6
g
0.21
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style TO-220AB
60CTQ150
Document Number: 94240
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VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
100
1000
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
TJ = 175 °C
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.2
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
20
40
60
80
100
120
140
160
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 125 °C
100
0
40
80
160
120
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
(Per Leg)
10
1
PDM
0.1
0.01
0.001
0.00001
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 02-Jul-12
Document Number: 94240
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CTQ150PbF, VS-60CTQ150-N3
Vishay Semiconductors
35
180
170
160
DC
150
140
130
Square wave (D = 0.50)
80 % rated VR applied
120
110
100
30
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
RMS limit
25
DC
20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
15
10
5
See note (1)
0
90
0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
35
40
45
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM
applied following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 02-Jul-12
Document Number: 94240
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CTQ150PbF, VS-60CTQ150-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
T
Q
1
2
3
4
5
1
-
Vishay Semiconductors product
2
-
Current rating (60 = 60 A)
3
-
Circuit configuration
150 PbF
6
7
C = Common cathode
4
-
Package
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage rating (150 = 150 V)
7
-
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CTQ150PbF
50
1000
Antistatic plastic tube
VS-60CTQ150-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 02-Jul-12
www.vishay.com/doc?95222
TO-220AB PbF
www.vishay.com/doc?95225
TO-220AB -N3
www.vishay.com/doc?95028
Document Number: 94240
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000