5434

SENSITRON________ _
SEMICONDUCTOR
SDA1006S
TECHNICAL DATA
DATA SHEET 5434, REV. A
Diode Array




Devices Are Serialized
Built And Screened To Space Level Quality
Space Quality Level Conformance Testing Is Performed On Each Lot
Each diode similar to JANS1N5615
MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE
O
All rating at are TA = 25 C unless otherwise specified
RATING
Peak Inverse Voltage (DC)
Average DC Output Current Per Diode
TA = 55oC
TA = 100oC
Peak Single Cycle Surge Current (1)
(TP=8.3ms single half-Sine wave)
Steady State Power Dissipation per
Package (2)
Max. Operating Junction Temperature
Max. Operating Ambient Temperature
Storage Temperature Range
Maximum forward voltage @ 3.0A
Tp = 300µs; 2% duty cycle
Maximum Instantaneous Reverse
Current At Rated (PIV)
Max. Reverse Recovery Time
IF =0.5 A, IR= 1.0A, IRR =0.25A
Max. Capacitance
f= 1MHz, VR = 12V
Thermal Resistance Junction to Case
Note:
SYMBOL
MAX
UNIT
PIV
200
V
IO
1
0.75
A
IFSM
10
A
PT
1000
mW
TJ
-55 to +150
o
-30 to 100
o
TSTG
-65 to +175
o
Vf
1.6
V
TA= 25oC
TA = 100oC
0.5
25
A
trr
150
ns
CT
45
pF
JC
21
TOP
C
C
C
o
C/W
(1) Each diode
0
0
(2) Derate at 8mW/ C above 25 C
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
SENSITRON________ _
SEMICONDUCTOR
SDA1006S
TECHNICAL DATA
DATA SHEET 5434, REV. A
Mechanical Outline
Electrical Schematic
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©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798  www.sensitron.com  [email protected]
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