STGAP1S Breakthrough in robustness and flexibility IGBT/MOSFET driver with 1500 V rated on-chip galvanic isolation provides enhanced robustness, noise immunity and design flexibility The STGAP1S’s on-chip isolation layer provides galvanic separation between input and control stages from high current gate driving and diagnostics. Its (extremely) high signal integrity and reduced propagation delay, together with extensive diagnostics, help developers design solutions with superior robustness and safety. The device’s high current capability allows a large application spectrum, in the several kW range. KEY FEATURES • Up to 1500 V high voltage rail KEY APPLICATIONS • Inverters for electrical vehicles • 5 A sink/source driver current capability • Electrical vehicle chargers • Negative gate turn-off • 600/1200 V inverters • 2-level turn-off • Solar inverters • Active Miller and VCE clamping • Uninterruptible power supplies (UPS) • IGBT desaturation detection • ± 50 V/ns transient immunity • 100 ns input-output propagation delay • SPI programmability and digital diagnostics • Qualified for automotive applications according to AEC-Q100 SPI communication enables complete and easy configurability as well as full digital diagnostics. www.st.com/STGAP1S In ST’s STGAP1S, a thick oxide isolation layer is grown on-chip to build a miniature transformer with up to 1500 V isolation capabilities. The transformer is used to inductively transfer logic signals between an input chip, where all interface circuitry is placed, and an output chip that includes high current driver and diagnostic blocks. Particular care was taken in designing the IGBT/ MOSFET driving section that features 30 V/ 5 A drive capability with separate sink and source paths for enhanced design flexibility and BOM reduction. A programmable two-step turn-off with negative drive and Miller clamp enables designs with the highest immunity to induced turn-on. The device is perfectly tailored to drive wide band-gap devices. All protection parameters and diagnostic information are accessible through a series of on-chip registers, for monitoring and control purposes, through an SPI bus, thus reducing pin count. STGAP1S embeds a comprehensive palette of protection and diagnostic features including anti-desaturation and over-current detection, under-voltage and over-voltage detection coupled with just a 100 ns of input-output propagation delay ensuring fast reaction times. The result is a compact, robust and highly noise-immune IGBT/ MOSFET driver offering enhanced design flexibility for high power applications such as inverters for electrical vehicles and electrical vehicle charging stations as well as inverters for harsh industrial environments. VDD VCECLAMP To level shifter 3VC voltage reg DESATcurr DESAT VREGISO VREG DESATth SD IN+ IN-/DIAG2 DIAG1 VH UVLO VH Control logic Floating section control logic Isolation GON GOFF Level shifter CLAMP VL GND UVLO VL GND 2LVTOth GNDISO Flooting group CLAMPth CS CK SDI SENSE SPI To floating section control logic SDO SENSEth ASC DEVICE SUMMARY Order code STGAP1S/STGAP1STR Package Packing Evaluation board SO24W Tube/Tape & reel EVALSTGAP1S © STMicroelectronics - December 2015 - Printed in United Kingdom - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies All other names are the property of their respective owners Reference: FLGAPDRIVE1215 For more information on ST products and solutions, visit www.st.com/gapdrive