TSFM Datasheet

TSFM
www.vishay.com
Vishay Electro-Films
Thin Film Top-Contact Resistor
for High Temperature Applications
FEATURES
• Qualified to operate at elevated temperatures up to 250 °C
• DC power rating up to 250 mW
• Small Size: 0.02" square
• Self passivating tantalum nitride film
• Oxidized silicon substrate
• Wide value range: 100  to 100 k
Product may not be to scale
The TSFM series of single-value resistors chips offer a small
size, wide ohmic value range and excellent power capacity,
maintaining these qualities to temperatures up to 250 °C.
The TSFM Tantalum Nitride resistor material offers excellent
resistance to high moisture environments. The TSFMs are
manufactured using Vishay Electro-Films (EFI) sophisticated
thin-film equipment and manufacturing technology. The
TSFMs are 100 % electrically tested and visually inspected
to MIL-STD-883, method 2032 class H or K.
APPLICATIONS
Vishay EFI TSFM top-contact 0.02" square resistor chips
are designed to operate at elevated temperatures and
power loads in many types of hybrid (chip and wire)
assemblies. They are ideally suited for extreme environment
applications such as “down hole” drilling.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE
Resistance Range
Tolerances
TCR
Tightest Standard Tolerance Available
UNIT
100 to 100K

± 0.1
%
± 25; ± 50; ± 100; ± 250
ppm/°C
Load Life Stability, 1000 h, +125 °C, 175 mW
± 0.1 %
± 25 ppm/°C
±1%
± 50 ppm/°C
±2%
±2%
± 100 ppm/°C
± 250 ppm/°C
100 Ω
100 kΩ
100 Ω
1 kΩ
10 kΩ 100 kΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-202, Method 308
Moisture Resistance, MIL-STD-202, Method 106 - Hermetic
Applications
VALUE
UNIT
-35
dB
± 0.5 max. R/R
%
Stability, 1000 h, +125 °C, 175 mW
Down to ± 1
%
Operating Temperature Range
-55 to +250
°C
± 0.25 max. R/R
%
Down to ± 1
%
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
High Temperature Exposure, +250 °C, 1000 h
Dielectric Voltage Breakdown
Operating Voltage
DC Power Rating at +125 °C (Derated to Zero at +250 °C)
5 x Rated Power Short-Time Overload, +25 °C, 5 s
Revision: 11-Sep-13
200
V
100 max.
V
250 at 70 °C
mW
± 0.25 max. R/R
%
Document Number: 61094
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFM
www.vishay.com
Vishay Electro-Films
CONFIGURATIONS in inches
0.020
0.020
0.016
0.020
0.006
0.004
0.004
0.004
TYPICAL RANGE
820 Ω to 1 MΩ
TYPICAL RANGE
100 Ω to 819 Ω
SCHEMATIC
MECHANICAL SPECIFICATIONS in inches (millimeters)
PARAMETER
Chip Size
0.020 x 0.020 ± 0.003 (0.5 x 0.5 ± 0.076)
Chip Thickness
0.010 ± 0.002 (0.254 ± 0.05)
Chip Substrate Material
Oxidized silicon, 10 kÅ minimum SiO2
Film Material
Tantalum nitride, self-passivating
Passivation
None
Bonding Pad Size
0.004 x 0.004 (0.10 x 0.10)
Number of Pads
2
Pad Material
100 μ" Au
Backing
None, lapped silicon (Au optional)
GLOBAL PART NUMBER INFORMATION
Global Part Number: TSFM50000FKGNHWS
Global Part Number Description: TSFM 5K 1 % 100 ppm/°C Au None H WS
T
S
F
MODEL
RESISTANCE
TSFM
First 4
digits are
significant
figures of
resistance
20 x 20
size
Ta2N on
silicon
Revision: 11-Sep-13
M
5
0
0
RESISTANCE
MULTILPLIER
CODE
TOL.
CODE
(%)
C = 0.001
B = 0.01
A = 0.1
0=1
1 = 10
2 = 100
3 = 1000
B = 0.1
C = 0.25
D = 0.5
F = 1.0
G = 2.0
H = 2.5
J = 5.0
K = 10.0
0
0
TCR
(ppm/°C)
E = ± 25
C = ± 50
K = ± 100
M = ± 250
F
K
TERMINATION
G = Au
G
N
H
W
S
BACK
METAL
VISUAL
CLASS
PACKAGING
CODE
G = Au
N = None
H=
Class H
K=
Class K
WS =
Waffle pack
100 min.,
1 mult
Document Number: 61094
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000