SFX Datasheet

SFX
www.vishay.com
Vishay Electro-Films
Thin Film, Top-Contact Megohm Resistor
FEATURES
• Wire bondable
• Megohm resistance range: 0.51 M to 20 M
• Chip size: 0.040 inches square standard, 0.030
inches square and 0.055 inches square optional
• Case: 0404
• Reduced hybrid size
Product may not be to scale
• Resistor material: Tantalum nitride, self-passivating
The SFX series resistor chips extends the range of available
resistance to 20 M These offer one of the best
combinations of small size and high value available.
• Oxidized silicon substrate
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
The SFXs are manufactured using Vishay Electro-Films (EFI)
sophisticated thin film equipment and manufacturing
technology. The SFXs are 100 % electrically tested and
visually inspected to MIL-STD-883, method 2032 class H or
class K.
APPLICATIONS
The SFX series megohm resistor chips are designed for use
in hybrid packages which require small-size high-value
resistors.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE
Total Resistance Range
Standard Tolerances
TCR
Tightest Standard Tolerance Available
0.5 %
0.1 %
± 50 ppm/°C
± 100 ppm/°C
± 250 ppm/°C
UNIT
360K to 30M

± 0.1, ± 0.5
%
± 50, ± 100, ± 250, ± 350
ppm/°C
SIZE (in inches)
MIN.
MAX.
0.030 x 0.030
360 k
10 M
0.040 x 0.040
510 k
20 M
0.055 x 0.055
1 M
30 M
± 350 ppm/°C
360 kΩ
2 MΩ 3.3 MΩ 10 MΩ
30 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
VALUE
UNIT
Noise, MIL-STD-202, Method 308
- 12 typ.
dB
Moisture Resistance, MIL-STD-202
Method 106, (Passivated only)
± 0.5 max. R/R
%
Stability, 1000 h, + 125 °C, 10 mW
± 1.0 max. R/R
%
- 55 to + 125
°C
Operating Temperature Range
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
± 0.25 max. R/R
%
High Temperature Exposure, + 150 °C, 100 h
± 0.5 max. R/R
%
Dielectric Voltage Breakdown
400
V
Insulation Resistance
1012 min.

Operating Voltage
100 max.
V
0.020
W
± 0.25 max. R/R
%
DC Power Rating at + 70 °C (Derated to zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
Revision: 04-Mar-13
1
Document Number: 61018
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFX
www.vishay.com
Vishay Electro-Films
DIMENSIONS in inches (millimeters)
A
B
± 0.002 (± 0.05)
± 0.002 (± 0.05)
0.030 (0.76)
0.027 (0.69)
0.040 (1.01)
0.037 (0.94)
0.055 (1.40)
0.052 (1.32)
A
0.005
B
0.005
SCHEMATIC
MECHANICAL SPECIFICATIONS
PARAMETER
VALUE
Chip Size
Per table above
Chip Thickness
0.010" ± 0.002" (0.254 mm ± 0.050 mm)
Chip Substrate Material
Oxidized silicon, 10 kÅ minimum SiO2
Resistor Material
Tantalum nitride, self-passivating
Bonding Pad Size
0.005" x 0.005" (0.127 mm x 0.127 mm)
Number of Pads
2
Pad Material
10 kÅ minimum aluminum (gold pads available)
Backing
None, lapped semiconductor silicon (gold back available)
GLOBAL PART NUMBER INFORMATION
Global Part Number: SFX25003KR4GGKWS
Global Part Number Description: SFX 2.5M 10 % 0 ppm/°C/- 250 ppm/°C 40 Au Au K WS
S
F
X
MODEL
RESISTANCE
SFX
The first
4 digits are
significant
figures of
resistance
High
value
TaN on
silicon
Revision: 04-Mar-13
2
5
RESISTANCE
MULTIPLIER
CODE
2 = 100
3 = 1000
4 = 10 000
0
TOLERANCE
CODE
B = 0.1 %
C = 0.25 %
D = 0.5 %
F = 1.0 %
G = 2.0 %
J = 5.0 %
K = 10.0 %
0
3
K
TCR
(ppm/°C)
R
SIZE
E = ± 25 3 = 30 x 30
C = ± 50 4 = 40 x 40
K = ± 100 5 = 55 x 55
M = ± 250
W = ± 350
I = 0/- 200
R = 0/- 250
P = 0/- 350
4
G
TERMINATION
G = Au
A = Al
2
G
BACK
METAL
K
VISUAL
CLASS
W
S
PACKAGING
CODE
G = Au H = Class H
WS =
N = None K = Class K Waffle pack,
100 min,
1 mult
Document Number: 61018
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000