SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices. In response to the growing demand for SiC products, ROHM has implemented the world's first full-scale, mass production of next-generation SiC components. Full SiC Power Module SiC - the next generation of compact, energy-saving Eco Devices Lower power loss and high temperature operation in a smaller form factor The demand for power is increasing on a global scale every year while In the power device field for power conversion fossil fuels continue to be depleted and global warming is growing at an alarming rate. ■Performance Comparison: SiC vs. Si Breakdown Electric Field (MV/cm) Bandgap (eV) Si 0.3 / SiC Si 1.1 / SiC High voltage Low ON-resistance High-speed switching and control, SiC (Silicon Carbide) is garnering This requires better solutions and more increased effective use of power and resources. semiconductor material due to its superior attention as a next-generation characteristics compared with silicon, including ROHM provides Eco Devices designed for lower power consumption lower ON-resistance, faster switching speeds, and high efficiency operation. These include highly integrated circuits and higher temperature operation. utilizing sophisticated, low power ICs, passive components, 3.0 3.2 Thermal Conductivity (W/cm℃) Si 1.5 / SiC High temperature operation (over 250ºC) 4.9 High heat dissipation ・Higher voltages & currents ・Smaller cooling systems ・Low conduction loss ・Higher power density ・Reduced switching loss ・System miniaturization opto electronics and modules that save energy and reduce CO₂ emissions. Included are next-generation SiC devices that promise even lower Implementing SiC devices in a variety of fields, including the power, automotive, railway, industrial, and consumer sectors power consumption and higher efficiency. SiC devices allow for smaller products with lower power consumption that make mounting possible even in tight spaces. Additional advantages ■Power Loss Comparison Power Loss per Arm (W) 900 800 700 600 500 Conduction Loss ［w］ 400 300 Turn on loss 200 ［w］ 100 0 include high voltage and high temperature operation, enabling stable operation under harsh conditions̶impossible with silicon-based products. In hybrid vehicles and EVs SiC power solutions Si(IGBT+FRD) SiC(MOSFET+SBD) 800 700 market size(M$) global warming. Measurement Conditions Tj=125℃ 600V 100A Turn off loss ［w］ 900 larger cabin area, while in solar power generation approximately 50%, contributing to reduced Switching loss decreased by 85% ■long - term market forecast for SiC devices in various power applications contribute to increased fuel economy and a applications they improve power loss by Power loss reduced by 47%, R&D / High T° / Others Ships & Vessels 600 Smart Grid Power 500 PV inverters Rail traction 400 Wind Turbine 300 UPS 200 100 0 9 +3 %/ ye ar Motor AC Drive EV / HEV +26%/y PFC 2010 2011 2012 2013 ear 2014 2015 2016 2017 2018 2019 2020 Market forecast for SiC power devices Source: Yole Développement Industrial equipment Reduces power loss and size Consumer electronics Energy-saving air conditioners and IH cooktops Power transmission systems Servers Reduce power loss Reduce data center power consumption by minimizing server power loss Railway Reduce inverter size and weight EV Photovoltaics (i.e. hybrid/electric vehicles) Reduce cooling system size, decrease weight, and increase fuel economy Increase power conditioner efficiency 03 SiC Power Devices SiC Power Devices 04 The industry's first mass-produced SiC makes the previously impossible ''possible'' SiC Power Device Full SiC Power Module SiC MOSFET Mass Produced TO-247 ［3pin］ Mass Produced Switching loss reduced by 85% (max.) High speed switching with low ON- resistance ROHM has developed low-surge-noise power modules SiC enables simultaneous high speed switching with low integrating SiC devices produced in-house, maximizing ON-resistance ‒ normally impossible with silicone-based high-speed performance. The result is significantly reduced products. Additional features include superior electric switching loss compared with conventional Si IGBTs. characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used. Features (BSM120D12P2C005) ■ Ideal replacement for Si IGBT modules 2 50% less volume* Si IGBT (200A to 400A) 4 1200V rated voltage / 120A rated current 50% less volume 21mm *Compared with conventional Si IGBT modules 122mm 45.6mm （BSM120D12P2C005） BSM120D12P2C005 60 Esw（mJ） 40 Vds=600V Id=100A Vg（on）=18V Vg（off）=0V Tj=125℃ Inductive load 10 Si IGBT 5 0 0 50 10 0 1 150 200 250 Time (nsec) 300 350 400 ■ Internal Circuit Diagram Si IGBT Module (Competitor) SCT Series ■ Lineup Full SiC Power Module 10 Gate resistance Rg（Ω） Package 100 Module 450 0 SCH Series BVDSS Package Drain Gate Gate ID 4 Si-Super Junction MOSFET SiC MOSFET 0 50 100 Temperature（℃） 150 200 ■ Lineup Drain Reduced 85% (max.) 0.22 to 0.24 ohms even at 120° C 6 BSM180D12P2C101 30 20 100 Si MOSFET 8 2 SiC MOSFET ■ Internal Circuit Diagram (Half Bridge Circuit) Switching Loss Comparison 10 Switching loss reduced by 90% (max.) 15 -5 12 Vdd=400V Rg=5.6Ω 20 Full SiC Power Module (120A) Low switching loss makes SiC the ideal replacement ON-Resistance Temperature Characteristics (Compared with 650V-Class Products) 25 Current (A) 3 High-speed switching Turn OFF Characteristics (Compared with 1200V-Class Products) ON-Resistance （Ω） 1 Switching loss reduced by 85% (max.)* ROHM SiC power modules reduce switching loss considerably, making them ideal for replacing Si IGBT modules (depending on the operating conditions). 50 TO-220AB ［3pin］ BSM120D12P2C005 180A BSM180D12P2C101 Source MOSFET 650V RDS (on） 120mΩ 120mΩ TO-220AB ［3pin］ SCTMU001F SCT2120AF 1200V 120A BVDSS 400V TO-247 ［3pin］ Source MOSFET ̶ ̶ 1200V 80mΩ 160mΩ 280mΩ 450mΩ ̶ ̶ ̶ ̶ SCH2080KE SCT2080KE SCT2160KE SCT2280KE SCT2450KE SBD Reference values evaluated under the same conditions 05 SiC Power Devices SiC Power Devices 06 ROHM’s unique IC technology maximizes SiC characteristics DRIVER SiC SBD (Schottky Barrier Diodes) Isolated Gate Driver Mass Produced Under Development Significantly lower switching loss High-speed operation supports SiC ・High-speed operation with a max. I/O delay time of 150ns TO-220AC ［2pin］ SBDs were developed utilizing SiC, making them ideal for PFC circuits and ・Core-less transformer utilized for 2,500Vrms isolation inverters. Ultra-small reverse recovery time (impossible to achieve with silicon FRDs) ・Original noise cancelling technology results in high enables high-speed switching. This minimizes reverse recovery charge (Qrr), CMR (Common Mode Rejection). reducing switching loss considerably and contributes to end-product miniaturization. ・Supporting high VGS/negative voltage power supplies* TO-247 ［3pin］ Dual-Chip ・Compact package (6.5×8.1×2.01 mm) Switching Waveforms (SCS110AG) 12 ■ Recommended Operating Range (BM6101FV-C) SiC SBD 10 Current (A) 8 Switching loss reduced by 60% 6 4 TO-220FM ［2pin］ 2 0 -2 -4 *BM6101FV-C, BM6104FV-C Si FRD VR=400V di/dt=350A/μsec -6 LPTL ［4pin］ 100 Time (nsec) 200 Parameter Symbol Min. Max. Unit 4.5 5.5 V Input Supply Voltage VCC1 Output Supply Voltage VCC2 14 24 V Output VEE Voltage VEE2 -12 0 V Operating Temperature Range Ta -40 125 ℃ SSOP-B20W ■ IPM Operating Waveforms (BM6101FV-C) 〈Conditions〉ROHM SiC IPM VCC1＝5.0 VCC2＝18V VEE２＝-5V VPN＝800V Ta=25℃ ■ Lineup P SiC MOSFET 2nd Generation Package 650V 6A 8A 10A 12A TO-220AC ［2pin］ SCS206AG SCS208AG SCS210AG SCS212AG TO-220FM ［2pin］ SCS206AM SCS208AM SCS210AM SCS212AM TO-247 ［3pin］ LPTL ［4pin］ 07 SiC Power Devices ̶ ̶ ̶ ̶ IN 1200V 15A SCS215AG 20A SCS220AG 30A ̶ 40A ̶ 5A 10A 15A 5V 20A SCS205KG SCS210KG SCS215KG SCS220KG 30A ̶ g Gate Driver d IN （10V/div.） s 18V 40A 2μs/div. 800V SiC FET Gate （20V/div.） 5V V SiC FET Drain （500V/div.） SiC SBD ̶ Stable operation ensured up to 800V/400A output A Id （500A/div.） N ■ Lineup SCS215AM SCS220AM ̶ SCS220AE2 SCS206AJ SCS208AJ SCS210AJ SCS212AJ SCS215AJ SCS220AJ ̶ SCS230AE2 ̶ ̶ ̶ ̶ ̶ ̶ SCS240AE2 ̶ SCS210KE2 ̶ SCS220KE2 ̶ ̶ ̶ ̶ ̶ ̶ ̶ SCS230KE2 SCS240KE2 ̶ ̶ Features Part No. Rated Output Current (Peak) Isolation Voltage Negative Power Supply Compatibility I/O Delay Time Over current Detection DESAT Mirror Clamp Function Soft Turn OFF Function Error Status Output BM6101FV-C 3.0A 2,500Vrms ○ 350ns ○ ○ ○ ○ ○ BM6102FV-C 3.0A 2,500Vrms ̶ 200ns ○ ○ ○ ○ ○ BM6104FV-C 3.0A 2,500Vrms ○ 150ns ○ ○ ○ ○ ○ SiC Power Devices 08 High quality ensured through a consistent production system DISCRETE Diodes Transistors Quality First is ROHM’ s official corporate policy. In this regard a consistent production system was established for SiC production. The acquisition of SiCrystal (Germany) in 2009 has allowed ROHM to perform the entire manufacturing process, from wafer processing to package manufacturing, in-house. This not only ensures stable production and unmatched quality, but lowers cost competitiveness and enables the development of new products. SiCrystal AG, the largest SiC monocrystal wafer manufacturer in Europe, became a member of the ROHM Group in 2009. SiCrystal was established in 1997 in Germany based on a SiC monocrystal growth technology development project launched in 1994. Mass production and supply of SiC wafers began in 2001. In 2012, SiCrystal relocated to a new plant in Nüremberg to increase production capacity. With the corporate philosophy "Stable Quality", SiCrystal has adopted an integrated wafer production system from raw SiC material to crystal growth, wafer processing, and inspection, and in 1999 was granted ISO9001 certification. ASSYLINE ■ Manufactured Product: SiC Wafers In-house production equipment High quality, high volume, and stable manufacturing are guaranteed utilizing in-house production equipment. 100% in-house production system Nürnberg MODULES Low inductance module WAFER PROCESS A low inductance module utilizing SiC’ s high-speed characteristics was developed SiC processes 3inch 2inch 150mm （6inch） 100mm （4inch） Mass Production High quality lines integrating SiC’ s unique processes are utilized. Preparing for mass production Acquired ISO9001 Certification ■ SiC Wafer Production Advanced Crystallization Technology ON SITE PLANT Cutting-edge, self-sufficient manufacturing facility In addition to in-house power generation, all materials required for manufacturing, such as hydrogen, oxygen, and nitrogen, are included on site. CHIP DESIGN High quality design Master engineers are on hand to ensure high quality designs. SiC ingots are produced via a crystal growth process utilizing a sublimation method called "Rayleigh's method" that sublimates SiC powder and recrystallizes it under cold temperatures. Compared with conventional Si ingots which are crystalized in the liquid phase from Si melt, the growth rate using the sublimation method is slow, making crystal defects likely to occur, and therefore requires precision technology for crystal control. SiCrystal utilizes advanced crystallization technology to produce stable quality wafers. Insulating Material Seed Crystal SiC Powder Water-Cooled Coils Crucible For SiC: For Si: Temperature: 2,000 to 2,400° C Temperature: 1,230 to 1,260° C P r i n c i p l e: Transports sublimated gas to the surface of the seed crystal by a heat gradient in order to recrystallize it. Crystal control is difficult and the growth rate is slow compared with liquid phase growth. P r i n c i p l e : Liquid-phase growth during which Si melt is solidified on the seed crystal. This method is characterized by fast crystal growth. CAD In-house photo masking Enabling uniform quality control from SiC chip design to photo masking 1. Crystal growth 2. External polishing 3. Flat formation 4. Slicing 5. Sanding / Edge polishing / Cleaning SiC Wafer WAFER SiC wafer manufacturing ROHM acquired SiCrystal (a German SiC substrate manufacturer), resulting in stable supply of high-quality SiC substrates. 09 SiC Power Devices SiC Power Devices 10 Research & Development Development of high temperature operation (Tj=225° C) transfer mold modules ROHM has developed SiC modules capable of operating at thigh temperatures for inverter driving in automotive systems and industrial devices. These transfer mold modules are the first in the industry to ensure stable operation up to 225℃ while maintaining the compact, low-cost package configurations commonly used in current Si devices. This contributes to wide compatibility and ensures ready adoption. Modules incorporating 6 devices and featuring 1200V/300A operation at temperatures up to 225℃ are available. ■ Future solutions for high temperature operation High temperature SiC gate drivers Gate drivers using SOI wafers are currently under development. They are expected to achieve higher speeds with lower power consumption. SiC high temperature devices Compact Operation has been verified above 200ºC. Evaluating reliability at high temperatures is the next step. High temperature High temperature capacitors devices manufactured in-house combined with original high heat Unique technology was used to develop high temperature packaging suitable for SiC devices. resistant packaging technology. Proprietary technology makes it possible to develop ultra-compact large current SiC IPMs. ROHM is actively involved in partnerships with major universities in a variety of fields in order to share expertise, cultivate new technologies, and collaborate on breakthrough R&D. High efficiency (Intelligent Power Module) High temperature, high voltage High temperature packaging technology State-of-the-art industry-academia R&D collaboration High power High temperature operation, high voltage IPM Devices featuring new materials and designs are currently being developed with higher temperature capability. New TOPICS ROHM, in collaboration with major motor manufacturers, is focused on developing SiC modules for next-generation vehicle motors that utilize a number of compact products developed in-house, from Development of mass-produced SiC epitaxial growth equipment K y o t o University × Tokyo Electron × ROHM 3-institution technological collaboration enables rapid development of high-quality SiC devices In 2007 ROHM, along with Kyoto University and Tokyo Electron, developed mass production SiC epitaxial growth equipment that can processes multiple SiC wafers in a single operation. Fast development was made possible by efficiently sharing technologies. These new equipment are currently used for mass producing ROHM SiC devices. 11 SiC Power Devices gate driver ICs to transistors, diodes, and resistors. High performance SiC MOSFET with High-k gate is currently under development Previously, no electronic devices could be built into motors due to the extreme temperatures. However, ROHM SiC module technology allows compact integration of electronic components within the motor, making it possible to produce high efficiency motors with built-in inverters. Osaka U n i v e r s i t y × K y o t o U n i v e r s i t y × To k y o E l e c t r o n × R O H M Characteristics improvement based on new materials, 1.5 times the breakdown voltage, 90% lower leakage current Developed the industry’ s first SiC An ultra-compact large current SiC IPM has been realized by attaching a high-temperature-resistant micro-mold-type SiC module directly to a cooler. Company S ig n i f i c a n t l y d o w n s i z i n g o f t h e i n v e r t e r Tokyo Electron Trench MOSFET utilizing an on the gate insulating film. The result is 1.5x the breakdown voltage and 90% lower leakage current vs. conventional thermally Osaka University High performance SiC MOSFET is currently under development oxidized films (SiO2) for greater to find wide adoption in electric vehicles, industrial equipment, and Wa ter Co ole dH e at 16mm Sin k Radiator Kyoto University th the volume of conventional Si inverters 115mm Water Pump 40mm led Coo Air k t Sin Hea SiC Power Module University reliability with lower loss. Expected trains in the near future. 1/10 Si(IGBT) Power Module aluminum oxynitride (AION) layer Si(IGBT) Power Module Water Cooled System ROHM Reservoir Tank SiC Power Module Only this size of Power module can drive 60kW class motor Air Cooled System Conventional HEV SiC Power Devices 12 Focusing on cutting-edge SiC technology and leading the industry through innovative R&D ROHM has been focused on developing SiC for use as a material for next-generation power devices for years, collaborating with universities and end-users in order to cultivate technological know-how and expertise. This culminated in Japan's first mass-produced Schottky barrier diodes in April 2010 and the industry’ s first commercially available SiC transistors (MOSFET) in December. And in March 2012 ROHM unveiled the industry's first mass production of Full SiC Power Modules. History SiC Technology Breakthroughs Max Temp = 250.8℃ 80% Duty Cycle 20% Duty Cycle ❷ ❶ 2002 Begin preliminary experiments with SiC MOSFETs (Jun 2002) Develop SiC MOSFET prototypes (Dec 2004) 2005 2007 Ship SiC MOSFET samples (Nov 2005) ROHM, along with Kyoto University and Tokyo Electron, announce the development of SiC epi film mass-production technology (Jun 2007) Announce the development of SiC MOSFETs with the industry’ s smallest ON-resistance (3.1mΩcm²) (Mar 2006) ❸ 2009 2010 The ROHM Group acquires SiCrystal, an SiC wafer manufacturer ❸ (Jul 2009) Establish an integrated SiC device production system. Begin mass production of SiC SBDs ❹ (Apr 2010) Develop the industry’ s first high current low resistance SiC trench MOSFET (Oct 2009) 13 SiC Power Devices Trial manufacture of large current (300A) SiC MOSFETs and SBDs (Schottky Barrier Diodes) (Dec 2007) Successfully develop the industry's first SiC power modules containing trench MOSFETs and SBDs that can be integrated into motors (Oct 2010) Begin mass production of SiC MOSFETs (Dec 2010) Reducing environmental load 2008 Develop a new type of SiC diode with Nissan Motors (Apr 2008) Release trench-type MOSFETs featuring the industry’ s smallest ON-resistance: 1.7mΩcm² (Sep 2008) Nissan Motors conducts a driving experiment of a fuel-cell vehicle equipped with an inverter using ROHM's SiC diode (Sep 2008) ❹ SiC Eco Devices Honda R&D Co., Ltd. and ROHM test prototype SiC power modules for hybrid vehicles ❶ (Sep 2008) ROHM tests prototype high temperature operation power modules that utilize SiC elements and introduces a demo capable of operation at 250 ºC ❷ (Oct 2008) ❺ ❻ 2011 2012 Develop the industry's first transfer mold SiC power modules capable of high temperature operation (up to 225° C) ❺ (Oct 2011) Launch the industry's first mass production of ''Full SiC'' power modules with SiC SBDs and SiC MOSFETs ❻ (Mar 2012) APEI Inc. (Arkansas Power Electronics International) and ROHM develop high-speed, high-current (1000A-class) SiC trench MOS modules (Oct 2011) Begin mass production of SiC-MOS Module (Dec 2012) SiC power devices deliver superior energy savings. ROHM is expanding its lineup of SiC power devices with innovative new products that minimize power consumption in order to reduce greenhouse gas emissions and lessen environmental impact. of November, 2013. No.56P6733E 11.2013 1500SG