DN1155 Use of DGD2103 & DGD2104 in IR2103 & IR2104 Applications Introduction The DGD2103 and DGD2104 are high-side/low-side gate driver ICs capable of driving 600V MOSFET / IGBTs and have been designed to be a pin to pin, functionally compatible, drop in replacements to the IRS2103 and IRS2104 respectively. However, for applications using the older IR2103 or IR2104 there may need to be a small change of BOM to best match the gate drivers’ response. Differences between the DGD2103/DGD2104 and the IR2103/IR2104 From the application perspective, the most significant differences in the specifications are rise/fall and output current capability as shown in Table 1 below. Symbol Definition IO+ IO- Output high short circuit pulse current Output low short circuit pulse current DGD2103/DGD2104 Min Typ Max 130 290 270 600 tr tf Turn-on rise time Turn-off fall time 70 35 170 90 Min 130 270 IR2103/IR2104 Typ Max 210 360 100 50 170 90 Units mA mA ns ns Table 1: Specification differences A faster gate driver IC will turn-on and turn-off the MOSFET/IGBT quicker. In some applications, this will translate to a more efficient system because of less switching losses. But in some driver circuits, the faster dV/dt and dI/dt could cause more overshoot, and potentially greater –VS undershoot, possibly causing a circuit to not function properly. Hence, to use the DGD2103/DGD2104 in an IR2103/IR2104 application, and if the intention is to have the similar gate drive as the IR2103/IR2104, then the gate resistor would need to be increased to slow down the drive signal. Matching the Rise/Fall time A typical gate driver half-bridge circuit can be seen in Figure 1. Often for the HO and LO gate drives, external resistors (RGH and RGL) are used. To increase rise/fall time, RGH and RGL are increased. Figure 1: Typical DGD2103 Half-Bridge Circuit DN1155 – Rev 1 1 of 3 www.diodes.com January 2016 © Diodes Incorporated DN1155 To best match the DGD2103/DGD2104 in an IR2103/IR2104 application, match the rise/fall time of the DGD2103/DGD2104 with that of the IR2103/IR2104 in that application. To show an example, using the circuit similar to Figure 1 except instead of the MOSFETs as load to the gate drive signal, a load capacitor (CL = 1000pF) was used. Figure 2: IR2103 with RGL = 3Ω, tr = 86ns Figure 3: DGD2103 with RGL = 3Ω, tr = 68ns Figure 4: DGD2103 with RGL= 100Ω, tr = 86ns Hence, by making the gate resistors, RGH and RGL, larger you will have similar rise and fall times and will decrease the chances of any unwanted effects due to the higher dV/dt and dI/dt. Note that in other driver circuits the value may be greater or less than 100Ω depending on initial gate resistor value and MOSFET gate capacitance. DN1155 – Rev 1 2 of 3 www.diodes.com January 2016 © Diodes Incorporated DN1155 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DN1155 – Rev 1 3 of 3 www.diodes.com January 2016 © Diodes Incorporated