DN1155

DN1155
Use of DGD2103 & DGD2104 in IR2103 & IR2104 Applications
Introduction
The DGD2103 and DGD2104 are high-side/low-side gate driver ICs capable of driving 600V MOSFET /
IGBTs and have been designed to be a pin to pin, functionally compatible, drop in replacements to the
IRS2103 and IRS2104 respectively. However, for applications using the older IR2103 or IR2104 there may
need to be a small change of BOM to best match the gate drivers’ response.
Differences between the DGD2103/DGD2104 and the IR2103/IR2104
From the application perspective, the most significant differences in the specifications are rise/fall and output
current capability as shown in Table 1 below.
Symbol
Definition
IO+
IO-
Output high short circuit pulse current
Output low short circuit pulse current
DGD2103/DGD2104
Min
Typ
Max
130
290
270
600
tr
tf
Turn-on rise time
Turn-off fall time
70
35
170
90
Min
130
270
IR2103/IR2104
Typ
Max
210
360
100
50
170
90
Units
mA
mA
ns
ns
Table 1: Specification differences
A faster gate driver IC will turn-on and turn-off the MOSFET/IGBT quicker. In some applications, this will
translate to a more efficient system because of less switching losses. But in some driver circuits, the faster
dV/dt and dI/dt could cause more overshoot, and potentially greater –VS undershoot, possibly causing a
circuit to not function properly.
Hence, to use the DGD2103/DGD2104 in an IR2103/IR2104 application, and if the intention is to have the
similar gate drive as the IR2103/IR2104, then the gate resistor would need to be increased to slow down the
drive signal.
Matching the Rise/Fall time
A typical gate driver half-bridge circuit can be seen in Figure 1. Often for the HO and LO gate drives,
external resistors (RGH and RGL) are used. To increase rise/fall time, RGH and RGL are increased.
Figure 1: Typical DGD2103 Half-Bridge Circuit
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To best match the DGD2103/DGD2104 in an IR2103/IR2104 application, match the rise/fall time of the
DGD2103/DGD2104 with that of the IR2103/IR2104 in that application. To show an example, using the
circuit similar to Figure 1 except instead of the MOSFETs as load to the gate drive signal, a load capacitor
(CL = 1000pF) was used.
Figure 2: IR2103 with RGL = 3Ω, tr = 86ns
Figure 3: DGD2103 with RGL = 3Ω, tr = 68ns
Figure 4: DGD2103 with RGL= 100Ω, tr = 86ns
Hence, by making the gate resistors, RGH and RGL, larger you will have similar rise and fall times and will
decrease the chances of any unwanted effects due to the higher dV/dt and dI/dt. Note that in other driver
circuits the value may be greater or less than 100Ω depending on initial gate resistor value and MOSFET
gate capacitance.
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