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Datasheet
2.7V to 5.5V Input, 2.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9B200MUV
Key Specifications
General Description
BD9B200MUV is a synchronous buck switching
regulator with built-in low on-resistance power MOSFETs.
This IC, which is capable of providing current up to 2A,
features fast transient response by employing constant
on-time control system. It offers high oscillating
frequency at low inductance. With its original constant
on-time control method which operates low consumption
at light load, this product is ideal for equipment and
devices that demand minimal standby power
consumption.
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Input Voltage Range:
2.7V to 5.5V
Output Voltage Range:
0.8 V to VPVIN x 0.8 V
Maximum Operating Current:
2A (Max)
Switching Frequency:
2MHz/1MHz (Typ)
High-Side MOSFET ON Resistance: 50mΩ (Typ)
Low-Side MOSFET ON Resistance: 50mΩ (Typ)
Standby Current:
0μA (Typ)
Package
VQFN016V3030
W (Typ) x D (Typ) x H (Max)
3.00 mm x 3.00 mm x 1.00 mm
Features


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Synchronous Single DC/DC Converter
Constant on-time control suitable to Deep-SLLM
Over Current Protection
Short Circuit Protection
Thermal Shutdown Protection
Under Voltage Lockout Protection
Adjustable Soft Start
Power Good Output
VQFN016V3030 Package
(Backside Heat Dissipation)
Applications

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VQFN016V3030
Step-down Power Supply for DSPs, FPGAs,
Microprocessors, etc.
Laptop PCs/Tablet PCs/Servers
LCD TVs
Storage Devices (HDDs/SSDs)
Printers, OA Equipment
Entertainment Devices
Distributed Power Supply, Secondary Power Supply
Typical Application Circuit
Figure 1. Application Circuit
〇Product structure : Silicon monolithic integrated circuit
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〇This product has no designed protection against radioactive rays
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Datasheet
BD9B200MUV
Pin Configuration
PVIN
1
PVIN
2
AVIN
EN
PGD
BOOT
(TOP VIEW)
16
15
14
13
12
SW
11
SW
E-Pad
PGND
4
9
SS
5
6
7
8
MODE
SW
FREQ
10
FB
3
AGND
PGND
Figure 2. Pin Assignment
Pin Descriptions
Pin No.
Pin Name
Function
1, 2
PVIN
3, 4
PGND
Ground terminals for the output stage of the switching regulator.
5
AGND
Ground terminal for the control circuit.
6
FB
Power supply terminals for the switching regulator.
These terminals supply power to the output stage of the switching regulator.
Connecting a 10µF ceramic capacitor is recommended.
An inverting input node for the error amplifier and main comparator.
See page 22 for how to calculate the resistance of the output voltage setting.
FREQ
Terminal for setting switching frequency. Connecting this terminal to ground makes
switching to operate constant on-time corresponding to 2.0MHz. Connecting this
terminal to AVIN makes switching to operate constant on-time corresponding to
1.0MHz. Please fix this terminal to AVIN or ground in operation.
8
MODE
Terminal for setting switching control mode. Connecting this terminal to AVIN forces
the device to operate in the fixed frequency PWM mode. Connecting this terminal to
ground enables the Deep-SLLM control and the mode is automatically switched
between the Deep-SLLM control and fixed frequency PWM mode. Please fix this
terminal to AVIN or ground in operation.
9
SS
Terminal for setting the soft start time. The rise time of the output voltage can be
specified by connecting a capacitor to this terminal. See page 23 for how to calculate
the capacitance.
10, 11, 12
SW
Switch nodes. These terminals are connected to the source of the High-Side
MOSFET and drain of the Low-Side MOSFET. Connect a bootstrap capacitor of 0.1
µF between these terminals and BOOT terminal. In addition, connect an inductor of
0.47µH to 1µH (FREQ=L), 1μH to 1.5μH (FREQ=H) considering the direct current
superimposition characteristic.
13
BOOT
Terminal for bootstrap. Connect a bootstrap capacitor of 0.1 µF between this terminal
and SW terminals. The voltage of this terminal is the gate drive voltage of the
High-Side MOSFET.
14
PGD
A “Power Good” terminal, an open drain output. Use of pull up resistor is needed. See
page 17 for how to specify the resistance. When the FB terminal voltage reaches
more than 80% of 0.8 V, the internal Nch MOSFET turns off and the output turns High.
15
EN
16
AVIN
Terminal for supplying power to the control circuit of the switching regulator.
Connecting a 0.1µF ceramic capacitor is recommended.
This terminal must be connected to PVIN.
-
E-Pad
A backside heat dissipation exposed pad. Connecting to the internal PCB ground
plane by using multiple vias provides excellent heat dissipation characteristics.
7
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Enable terminal. Turning this terminal signal Low (0.8V or lower) forces the device to
enter the shutdown mode. Turning this terminal signal High (2.0V or higher) enables
the device. This terminal must be terminated.
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Datasheet
BD9B200MUV
Block Diagram
Figure 3. Block Diagram
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Datasheet
BD9B200MUV
Description of Blocks
●
VREF
The VREF block generates the internal reference voltage.
●
UVLO
The UVLO block is for Under Voltage lockout protection. It will shut down the IC when VIN falls to 2.45 V (Typ) or
lower. The threshold voltage has a hysteresis of 100mV (Typ).
●
TSD
The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal
temperature of IC rises to 175°C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The
circuit has a hysteresis of 25°C (Typ).
●
Soft Start
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the
prevention of output voltage overshoot and inrush current. A built-in soft start function is provided and a soft start is
initiated in 1msec (Typ) when the SS terminal is open.
●
Control Logic + DRV
This block is a DC/DC driver. A signal from On Time is applied to drive the MOSFETs.
●
PGOOD
When the FB terminal voltage reaches more than 80% of 0.8 V, the Nch MOSFET of the built-in open drain output
turns off and the output turns High.
●
OCP/SCP
After soft start is completed and in condition where output voltage is below 70% (Typ) of voltage setting, it counts the
number of times of which current flowing in High side FET reaches over current limit. When 512 times is counted it
stops operation for 1m sec (Typ) and re-operates. Counting is reset when output voltage is above 80% (Typ) of
voltage setting or when EN, UVLO, SCP function is re-operated.
●
Error Amplifier
Adjusts Main Comparator input to make internal reference voltage equal to FB terminal voltage.
●
Main Comparator
Main comparator compares Error Amplifier output and FB terminal voltage. When FB terminal voltage becomes low it
outputs High and reports to the On Time block that the output voltage has dropped below control voltage.
●
On Time
This is a block which creates On Time. Requested On Time is created when Main Comparator output becomes High.
On Time is adjusted to restrict frequency change even with input and output voltage change.
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Datasheet
BD9B200MUV
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Supply Voltage
EN Terminal Voltage
Symbol
Rating
Unit
VPVIN, VAVIN
-0.3 to +7
V
VEN
-0.3 to +7
V
MODE Terminal Voltage
VMODE
-0.3 to +7
V
FREQ Terminal Voltage
VFREQ
-0.3 to +7
V
PGD Terminal Voltage
VPGD
-0.3 to +7
V
Voltage from GND to BOOT
VBOOT
-0.3 to +14
V
Voltage from SW to BOOT
⊿VBOOT
-0.3 to +7
V
FB Terminal Voltage
VFB
-0.3 to +7
V
SW Terminal Voltage
VSW
-0.3 to VPVIN + 0.3
V
Output Current
IOUT
2.5
A
Pd
2.66
W
Allowable Power Dissipation(Note 1)
Operating Temperature Range
Topr
-40 to 85
C
Storage Temperature Range
Tstg
-55 to 150
C
(Note 1) VQFN016V3030: Derate by 21.3mW when operating above 25C
PCB size: 70mm x 70mm x 1.6mm when mounted on a 4-layer glass epoxy board (copper foil area: 70mm x 70mm)
Copper foil thickness: Front side and reverse side 70µm be used, 2nd and 3rd 35µm be used.
Caution1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions (Ta= -40°C to +85°C)
Parameter
Supply Voltage
Symbol
Min
Typ
Max
Unit
VPVIN, VAVIN
2.7
-
5.5
V
Output Current (Note 2)
IOUT
-
-
2
A
Output Voltage Range
VRANGE
0.8
-
VPVIN × 0.8
V
(Note 2) Pd, ASO should not be exceeded.
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Datasheet
BD9B200MUV
Electrical Characteristics (Unless otherwise specified Ta=25°C, VAVIN = VPVIN = 5V, VEN = 5V, VMODE = GND)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Standby Supply Current
ISTB
-
0
10
µA
Operating Supply Current
ICC
-
40
60
µA
UVLO Detection Threshold
VUVLO1
2.35
2.45
2.55
V
EN=GND
FREQ=AVIN, IOUT=0mA
Non switching
VIN falling
UVLO Release Threshold
VUVLO2
2.425
2.55
2.7
V
VIN rising
VUVLOHYS
50
100
200
mV
EN Input High Level Voltage
VENH
2.0
-
-
V
EN Input Low Level Voltage
VENL
-
-
0.8
V
IEN
-
5
10
µA
AVIN pin
UVLO Hysteresis
Enable
EN Input Current
EN=5V
Reference Voltage, Error Amplifier
FB Terminal Voltage
VFB1
0.792
0.8
0.808
V
FB Input Bias Current
IFB
-
-
1
µA
FB=0.8V
Internal Soft Start Time
TSS
0.5
1.0
2.0
ms
With internal constant
Soft Start Terminal Current
ISS
0.5
1.0
2.0
µA
FREQ Input High Level Voltage
VFRQH
VAVIN-0.3
-
-
V
FREQ Input Low Level Voltage
VFRQL
-
-
0.3
V
MODE Input High Level Voltage
VMODEH
VAVIN-0.3
-
-
V
MODE Input Low Level Voltage
VMODEL
-
-
0.3
V
On time1
ONT1
96
120
144
ns
VOUT=1.2V, FREQ=GND
On time2
ONT2
192
240
288
ns
VOUT=1.2V, FREQ=AVIN
Power Good Rising Threshold
VPGDH
75
80
85
%
FB rising, VPGDH=FB/VFBx100
Power Good Falling Threshold
VPGDL
65
70
75
%
FB falling, VPGDL=FB/VFBx100
Output Leakage Current
ILKPGD
-
0
5
µA
PGD=5V
Power Good On Resistance
RPGD
-
100
200
Ω
Power Good Low Level Voltage
PGDVL
-
0.1
0.2
V
High Side FET On Resistance
RONH
-
50
100
mΩ
Low Side FET On Resistance
RONL
-
50
100
mΩ
High Side Output Leakage Current
RILH
-
0
10
µA
No switching
Low Side Output Leakage Current
RILL
-
0
10
µA
No switching
Control
Power Good
IPGD=1mA
SW
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Datasheet
BD9B200MUV
Typical Performance Curves
45
3.0
40
VIN=5V
2.5
35
2.0
ISTBY [uA]
ICC [uA]
30
VIN=3.3V
25
20
15
1.5
1.0
VIN=5V
10
VIN=3.3V
0.5
5
0
0.0
-40
-20
0
20
40
Temperature [°C]
60
80
-40
Figure 4. Operating Supply Current vs Temperature
0
20
40
Temperature [°C]
60
80
Figure 5. Stand-by Supply Current vs Temperature
100
100
90
80
80
70
70
60
50
MODE=L
90
MODE=L
Efficiency [%]
Efficiency[%]
-20
MODE=H
40
60
50
MODE=H
40
30
30
20
20
VOUT=1.2V
FREQ=L
10
VOUT=1.2V
FREQ=H
10
0
0
1
10
100
1000
Load Current [mA]
1
10000
100
1000
Load Current [mA]
10000
Figure 7. Efficiency vs Load Current
(VIN=5V, VOUT=1.2V, L=1.5µH, FREQ=H)
Figure 6. Efficiency vs Load Current
(VIN=5V, VOUT=1.2V, L=1.0µH, FREQ=L)
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Datasheet
BD9B200MUV
Typical Performance Curves
- continued
100
100
90
90
80
70
Efficiency [%]
Efficiency [%]
70
MODE=H
60
50
40
30
MODE=H
60
50
40
30
20
20
VOUT=3.3V
FREQ=L
10
VOUT=3.3V
FREQ=H
10
0
0
1
10
100
1000
Load Current [mA]
10000
1
Figure 8. Efficiency vs Load Current
(VIN=5V, VOUT=3.3V, L=1.0µH, FREQ=L)
10
100
1000
Load Current [mA]
10000
Figure 9. Efficiency vs Load Current
(VIN=5V, VOUT=3.3V, L=1.5µH, FREQ=H)
0.808
2.60
0.806
2.56
Release
0.804
VIN=5V
2.52
VUVLO [V]
0.802
VFB [V]
MODE=L
80
MODE=L
0.800
VIN=3.3V
0.798
2.48
2.44
0.796
Detect
2.40
0.794
0.792
-40
-20
0
20
40
Temperature [°C]
60
2.36
80
-40
Figure 10. FB Voltage vs Temperature
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-20
0
20
40
Temperature [°C]
60
80
Figure 11. UVLO Threshold vs Temperature
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Datasheet
BD9B200MUV
Typical Performance Curves
- continued
2.0
7.0
VIN=5V
6.0
UP
1.6
VIN=5.0V
VIN=3.3V
IEN [μA]
VEN [V]
1.8
1.4
5.0
4.0
DOWN
1.2
3.0
VIN =5.0V
VIN=3.3V
1.0
2.0
-40
-20
0
20
40
Temperature [°C]
60
80
-40
Figure 12. EN Threshold vs Temperature
-20
0
20
40
Temperature [°C]
60
80
Figure 13. EN Input Current vs Temperature
2.5
3.5
VIN=5V
VIN=5V
3.0
2.0
IFREQ [μA]
VFREQ [V]
2.5
2.0
VIN=3.3V
1.5
1.5
1.0
0.5
1.0
0.5
0.0
-40
-20
0
20
40
Temperature [°C]
60
80
-40
Figure 14. FREQ Threshold vs Temperature
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-20
0
20
40
Temperature [°C]
60
80
Figure 15. FREQ Input Current vs Temperature
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Datasheet
BD9B200MUV
Typical Performance Curves
- continued
3.5
6.0
VIN=5V
3.0
5.5
2.5
5.0
IMODE [μA]
VMODE [V]
VIN=5V
2.0
VIN=3.3V
4.5
1.5
4.0
1.0
3.5
0.5
3.0
-40
-20
0
20
40
Temperature [°C]
60
80
-40
60
60
55
55
50
50
VIN=3.3V
45
40
35
35
VIN=5V
30
25
25
20
20
0
20
40
Temperature [°C]
60
80
Figure 18. High Side ON-Resistance vs Temperature
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80
40
30
-20
60
VIN=3.3V
45
VIN=5V
-40
0
20
40
Temperature [°C]
Figure 17. MODE Input Current vs Temperature
RONL [mΩ]
RONH [mΩ]
Figure 16. MODE Threshold Voltage vs Temperature
-20
10/30
-40
-20
0
20
40
Temperature [°C]
60
80
Figure 19. Low Side ON-Resistance vs Temperature
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Datasheet
BD9B200MUV
Typical Performance Curves
- continued
85
120
RISING
80
110
RPGD [Ω]
VPGD [%]
100
75
70
VIN=3.3V
90
80
FALLING
65
VIN=5V
70
60
60
-40
-20
0
20
40
Temperature [°C]
60
80
-40
Figure 20. PGD Threshold vs Temperature
0
20
40
Temperature [°C]
60
80
Figure 21. PGD ON ON-Resistance vs Temperature
2.0
2.0
1.6
1.5
1.0
ISS [μA]
VIN=3.3V
TSS [msec]
-20
VIN=5V
VIN=5V
1.2
0.8
VIN=3.3V
0.5
0.4
0.0
0.0
-40
-20
0
20
40
Temperature [°C]
60
80
Figure 22. Soft Start Time vs Temperature
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-40
-20
0
20
40
Temperature [°C]
60
80
Figure 23. SS Terminal Current vs Temperature
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BD9B200MUV
Typical Performance Curves
- continued
2400
1200
MODE=H
2000
1000
1600
800
fSW [kHz]
fSW [kHz]
MODE=H
1200
800
600
400
400
MODE=L
0
0
200
FREQ=L
VIN=5V
MODE=L
0
250 500 750 1000 1250 1500 1750 2000
0
250 500 750 1000 1250 1500 1750 2000
Load Current [mA]
Load Current [mA]
Figure 24. Switching Frequency vs Load Current
Figure 25. Switching Frequency vs Load Current
1200
2300
1150
2200
1100
2100
1050
[kHz]
2400
2000
1000
f
fSW [kHz]
FREQ=H
VIN=5V
1900
950
1800
900
VOUT=1.2V
MODE=H
FREQ=L
IOUT=2A
1700
VOUT=1.2V
MODE=H
FREQ=H
IOUT=2A
850
1600
800
3.0
3.5
4.0
4.5
5.0
VIN Input Voltage [V]
5.5
3.0
Figure 26. Switching Frequency vs Input Voltage
3.5
4.0
4.5
5.0
VIN Input Voltage [V]
5.5
Figure 27. Switching Frequency vs Input Voltage
fSW[kHz]
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Datasheet
BD9B200MUV
Typical Performance Curves
- continued
VIN=5V/div
VIN=5V/div
EN=5V/div
EN=5V/div
Time=1ms/div
Time=1ms/div
VOUT=1V/div
VOUT=1V/div
SW=5V/div
SW=5V/div
Figure 29. Power Down Waveform with EN
(FREQ=H, RLOAD=0.6Ω)
Figure 28. Power Up Waveform with EN
(FREQ=H, RLOAD=0.6Ω)
VIN=5V/div
VIN=5V/div
EN=5V/div
EN=5V/div
Time=1ms/div
Time=1ms/div
VOUT=1V/div
VOUT=1V/div
SW=5V/div
SW=5V/div
Figure 30. Power Up Waveform with VIN
(FREQ=H, RLOAD=0.6Ω)
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Figure 31. Power Down Waveform with VIN
(FREQ=H, RLOAD=0.6Ω)
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BD9B200MUV
Typical Performance Curves
- continued
VOUT=20mV/div
VOUT=20mV/div
Time=1µs/div
Time=1µs/div
SW=2V/div
SW=2V/div
Figure 32. Switching Waveform
(VIN=5V, VOUT=1.2V, FREQ=L, IOUT=0.1A)
Figure 33. Switching Waveform
(VIN=5V, VOUT=1.2V, FREQ=L, IOUT=2A)
VOUT=20mV/div
SW=2V/div
VOUT=20mV/div
Time=1µs/div
Time=1µs/div
SW=2V/div
Figure 34. Switching Waveform
(VIN=5V, VOUT=1.2V, FREQ=H, IOUT=0.2A)
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Figure 35. Switching Waveform
(VIN=5V, VOUT=1.2V, FREQ=H, IOUT=2A)
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Datasheet
BD9B200MUV
- continued
1.0
1.0
0.8
0.8
0.6
0.6
Output Voltage Deviation[%]
Output Voltage Deviation[%]
Typical Performance Curves
0.4
0.2
MODE=H
0.0
-0.2
-0.4
MODE=L
-0.6
0.2
0.0
-0.2
-0.6
-0.8
-1.0
-1.0
3.0
3.5
4.0
4.5
VIN Input Voltage[V]
5.0
5.5
0.0
Figure 36. Line Regulation
(VOUT=1.2V, L=1.5μH, FREQ=H, IOUT=2A)
0.5
0.8 1.0 1.3 1.5
Load Current [A]
1.8
2.0
VOUT=50mV/div
Time=0.5m/div
Figure 38. Load Transient Response IOUT=0.1A to 2A
(VIN=5V, VOUT=1.2V, FREQ=L, MODE=L, COUT=Ceramic 44µF)
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0.3
Figure 37. Load Regulation
(VIN=5V, VOUT=1.2V, L=1.5μH, FREQ=H)
VOUT=50mV/div
IOUT=1A/div
MODE=H
-0.4
-0.8
2.5
MODE=L
0.4
IOUT=1A/div
Time=0.5m/div
Figure 39. Load Transient Response IOUT=0A to 2A
(VIN=5V, VOUT=1.2V, FREQ=L, MODE=H, COUT=Ceramic 44µF)
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BD9B200MUV
Application Example(s)
1. Basic Operation
(1) DC/DC Converter operation
BD9B200MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by
employing constant on-time control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode
for heavier load, while it utilizes Deep-SLLM (Deep-Simple Light Load Mode) control for lighter load to improve
efficiency.
Deep-SLLM Control
Efficiency η[%]
①
② PWM Control
Output Current IOUT [A]
Figure 40. Efficiency (Deep-SLLM Control and PWM Control)
①
②PWM Control
Deep-SLLM Control
VOUT
20mV/div
VOUT
20mV/div
SW
2.0V/div
SW
2.0V/div
Figure 41. Switching Waveform at Deep-SLLM Control
(VIN=5.0V, VOUT=1.2V, IOUT=100mA)
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Figure 42. Switching Waveform at PWM Control
(VIN=5.0V, VOUT=1.2V, IOUT=2A)
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BD9B200MUV
(2) Enable Control
The IC shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 2.0 V(Min), the
internal circuit is activated and the IC starts up. To enable shutdown control with the EN terminal, the shutdown
interval (Low level interval of EN) must be set to 100 µs or longer. Startup by EN must be at the same time or after
the input of power supply voltage.
VEN
EN terminal
VENH
VENL
0
t
VOUT
Output setting voltage
0
Soft start 1 msec
(typ.)
t
Figure 43. Start Up and Down with Enable
(3) Power Good
When the output voltage reaches more than 80% of the voltage setting, the open drain NMOSFET, internally
connected to the PGD terminal, turns off and the PGD terminal turns to Hi-z condition. Also when the output voltage
falls below 70% of voltage setting, the open drain NMOS FET turns on and PGD terminal pulls down with 100Ω.
Connecting a pull up resistor (10KΩ to 100KΩ) is recommended.
Figure 44. Power Good Timing Chart
(4) Soft Start
When EN terminal is turned High, Soft Start operates and output voltage gradually rises. With the Soft Start Function,
over shoot of output voltage and rush current can be prevented. Rising time of output voltage when SS terminal is
open is 1msec (Typ). Capacitor connected to SS terminal makes rising time more than 1msec. Please refer to page
23 for the method of setting rising time.
Figure 45. Soft Start Timing Chart
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BD9B200MUV
2. Protection
The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use them
for continuous protective operation
(1) Over Current Protection (OCP) / Short Circuit Protection (SCP)
Setting of Over current protection is 4.5A (Typ). When OCP is triggered, over current protection is realized by
restricting On / Off Duty of current flowing in upper MOSFET by each switching cycle. Also, if Over current protection
operates 512 cycles in a condition where FB terminal voltage reaches below 70% of internal standard voltage, Short
Circuit protection (SCP) operates and stops switching for 1msec (Typ) before it initiates restart. However, during
startup, Short circuit protection will not operate even if the IC is still in the SCP condition.
Table 1. Over Current Protection / Short Circuit Protection Function
Over current
EN terminal
PGD
Startup
protection
While start up
Valid
L
More than 2.0V
Startup completed
Valid
Less than 0.8V
Short circuit
protection
Invalid
Valid
H
*
Valid
Invalid
*
*
Invalid
Invalid
1ms(typ.)
VOUT
FB
High side
MOSFET gate
Low side
MOSFET gate
OCP threshold
Coil current
Inside IC
OCP signal
512 Cycle
PGD
Figure 46. Short Circuit Protection (SCP) Timing Chart
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(2) Under Voltage Lockout Protection (UVLO)
The Under Voltage Lockout Protection circuit monitors the AVIN terminal voltage.
The operation enters standby when the AVIN terminal voltage is 2.45V (Typ) or lower.
The operation starts when the AVIN terminal voltage is 2.55V (Typ) or higher.
VIN
UVLO OFF
UVLO ON
0V
hys
VOUT
Soft start
FB
terminal
High side
MOSFET gate
Low side
MOSFET gate
Normal operation
UVLO
Normal operation
Figure 47. UVLO Timing Chart
(3) Thermal Shutdown
When the chip temperature exceeds Tj=175C (Typ), the DC/DC converter output is stopped. The circuits are
automatically restored to normal operation when the chip temperature falls. It has a hysteresis of 25C (Typ). The
thermal shutdown circuit is intended for shutting down the IC from thermal runaway in an abnormal state with the
temperature exceeding Tjmax=150C. It is not meant to protect or guarantee the soundness of the application. Do
not use the function of this circuit for application protection design.
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BD9B200MUV
Application Example
Figure 48. Application Circuit
Table 2. Recommended Component Values (VIN=5V, FREQ=H)
VOUT
Reference
Designator
1.0V
1.2V
1.5V
1.8V
3.3V
R5
100kΩ
100kΩ
100kΩ
100kΩ
100kΩ
-
R7
75kΩ
75kΩ
160kΩ
150kΩ
160kΩ
-
R8
300kΩ
150kΩ
180kΩ
120kΩ
51kΩ
-
Description
(Note 3)
10μF
10μF
10μF
10μF
10μF
10V, X5R, 3216
C4
0.1μF
0.1μF
0.1μF
0.1μF
0.1μF
25V, X5R, 1608
(Note 4)
0.1μF
0.1μF
0.1μF
0.1μF
0.1μF
-
C2
C8
C9
22μF
22μF
22μF
22μF
22μF
6.3V, X5R, 3225
C10
22μF
22μF
22μF
22μF
22μF
6.3V, X5R, 3225
C14
120p
120pF
150pF
180pF
180pF
-
L1
1.5μH
1.5μH
1.5μH
1.5μH
1.5μH
TOKO, FDSD0420
Table 3. Recommended Component Values (VIN=5V, FREQ=L)
VOUT
Reference
Designator
1.0V
1.2V
1.5V
1.8V
3.3V
R5
100kΩ
100kΩ
100kΩ
100kΩ
100kΩ
-
R7
75kΩ
75kΩ
160kΩ
150kΩ
160kΩ
-
R8
300kΩ
150kΩ
180kΩ
120kΩ
51kΩ
-
C2(Note 3)
10μF
10μF
10μF
10μF
10μF
10V, X5R, 3216
Description
C4
0.1μF
0.1μF
0.1μF
0.1μF
0.1μF
25V, X5R, 1608
C8(Note 4)
0.1μF
0.1μF
0.1μF
0.1μF
0.1μF
-
C9
22μF
22μF
22μF
22μF
22μF
6.3V, X5R, 3225
C10
22μF
22μF
22μF
22μF
22μF
6.3V, X5R, 3225
C14
100p
120pF
100pF
120pF
120pF
-
L1
1.0μH
1.0μH
1.0μH
1.0μH
1.0μH
TOKO, FDSD0420
(Note 3) For capacitance of input capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7μF.
(Note 4) For capacitance of bootstrap capacitor take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value
to no less than 0.047μF.
※Evaluation using the actual machine must be done for above constant is only a value on our evaluation board.
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BD9B200MUV
Selection of Components Externally Connected
1. Output LC Filter Constant
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the
output voltage. It is recommended to use inductors of values 0.47µH to 1.0µH when FREQ=L or 1.0µH to 1.5µH at
FREQ=H.
IL
Inductor saturation current > IOUTMAX +⊿IL /2
IOUTMAX
⊿IL
Average inductor current
t
Figure 49. Waveform of current through inductor
Inductor ripple current ∆IL
ΔI L
V OUT
V IN -V OUT
1
F SW
V IN
Figure 50. Output LC filter circuit
608 mA 
L
Where:
VIN= 5V
VOUT= 1.2V
L=1.5µH
FSW =1MHz (switching frequency)
The saturation current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor
ripple current ∆IL.
The output capacitor COUT affects the output ripple voltage characteristics. The output capacitor COUT must satisfy the
required ripple voltage characteristics.
The output ripple voltage can be represented by the following equation.
ΔV RPL
ΔI L
R ESR
1
8
C OUT
F SW
V 
where RESR is the Equivalent Series Resistance (ESR) of the output capacitor.
* The capacitor rating must allow a sufficient margin with respect to the output voltage.
The output ripple voltage can be decreased with a smaller ESR.
A ceramic capacitor of about 22 µF to 47 µF is recommended.
*Be careful of total capacitance value, when additional capacitor CLOAD is connected in addition to output capacitor COUT.
Use maximum additional capacitor CLOAD (Max) condition which satisfies the following condition.
Maximum starting inductor ripple current ILSTART
Over Current limit 2.9A Min
Maximum starting inductor ripple current ILSTART can be expressed using the following equation.
ILSTART
Maximum starting output current I OMAX
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Charge current to output capacitor I CAP
ΔI L
2
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BD9B200MUV
Charge current to output capacitor ICAP can be expressed using the following equation.
I CAP
C OUT
C LOAD
TSS
VOUT
[A ]
For example, given VIN= 5V, VOUT= 3.3V, L= 1.5µH, switching frequency FSW= 800kHz(Min), Output capacitor COUT=
44µF, Soft Start time TSS= 0.5ms(Min), and load current during soft start IOSS= 2A, maximum CLOAD can be computed
using the following equation.
C LOAD Max 2.9 ‐ I OSS ‐ ΔI L /2
V OUT
T SS
‐ C OUT  21.6 μF
If the value of CLOAD is large, and cannot meet the above equation, adjust the value of the capacitor CSS to meet the
condition below.
2.9 ‐ I OSS ‐ ΔI L /2
V OUT I SS
C LOAD Max
V FB
C SS ‐ C OUT
(Refer to the following items (3) Soft Start Setting equation of time TSS and soft-start value of the capacitor to be
connected to the CSS.)
For example, given VIN = 5V, VOUT = 3.3V, L = 1.5µH, load current during soft start IOSS = 2A, switching frequency FSW=
800kHz (Min), Output capacitor COUT = 44µF, VFB = 0.792V(Max), ISS = 2.0µA(Max), with CLOAD = 220uF, capacitor CSS
is computed as follows.
C SS
V OUT I SS
2.9 ‐ I OSS ‐ ΔI L /2
V FB
C LOAD
C OUT
5086 pF 
2. Output Voltage Setting
The output voltage value can be set by the feedback resistance ratio.
For stable operation, it is recommended to use feedback resistance R1 of more than 20kΩ.
VOUT
VOUT
R1
Error Amplifier
R1 R2
R2
0.8 V 
0.8
VOUT ‐ 0.8
R1 Ω 
FB
R2
0.8V
R2
Figure 51. Feedback Resistor Circuit
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BD9B200MUV
3. Soft Start Setting
Turning the EN terminal signal High activates the soft start function. This causes the output voltage to rise gradually
while the current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush
current. The rise time depends on the value of the capacitor connected to the SS terminal.
T SS
C SS
C SS
I SS
V FB /I SS
T SS /V FB
Where :
T is Soft Start Time
C SS is Capacitor connected to Soft Start Time Terminal
V FB is FB Terminal Voltage (0.8V (Typ))
I SS is Soft Start Terminal Source Current (1.0μA(Typ))
SS
with C SS
T SS
0.01 μF ,
0.01 μF 0.8 V  )/1.0 μA 
8.0 msec 
Turning the EN terminal signal High with the SS terminal open or with the terminal signal High (no capacitor
connected) causes the output voltage to rise in 1msec (Typ).
4. FB Capacitor
Generally, in fixed ON time control (hysteresis control), sufficient ripple voltage in FB voltage is needed to operate
comparator stably. Regarding this IC, by injecting ripple voltage to FB voltage inside IC it is designed to correspond
to low ESR output capacitor. Please set the FB capacitor within the range of the following expression to inject an
appropriate ripple.
VOUT
FSW
VOUT
V IN C
FB
7.65 10 3
1‐
VOUT
FSW
VOUT
V IN
3.3 10 3
1‐
Where :
VIN is Input Voltage
VOUT is Output Voltage
FSW is Switching Frequency
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BD9B200MUV
PCB Layout Design
In the step-down DC/DC converter, a large pulse current flows into two loops. The first loop is the one into which the current
flows when the High-Side FET is turned ON. The flow starts from the input capacitor CIN, runs through the FET, inductor L
and output capacitor COUT and back to GND of CIN via GND of COUT. The second loop is the one into which the current
flows when the Low-Side FET is turned on. The flow starts from the Low-Side FET, runs through the inductor L and output
capacitor COUT and back to GND of the Low-Side FET via GND of COUT. Route these two loops as thick and as short as
possible to allow noise to be reduced for improved efficiency. It is recommended to connect the input and output capacitors
directly to the GND plane. The PCB layout has a great influence on the DC/DC converter in terms of all of the heat
generation, noise and efficiency characteristics.
Figure 52. Current Loop of Buck Converter
Accordingly, design the PCB layout considering the following points.





Connect an input capacitor as close as possible to the IC PVIN terminal on the same plane as the IC.
If there is any unused area on the PCB, provide a copper foil plane for the GND node to assist heat dissipation from
the IC and the surrounding components.
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the coil pattern as
thick and as short as possible.
Provide lines connected to FB far from the SW nodes.
Place the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.
Power Dissipation
When designing the PCB layout and peripheral circuitry, sufficient consideration must be given to ensure that the power
dissipation is within the allowable dissipation curve.
Allowable power dissipation: Pd [W]
4.0
2
(1) 4-layer board (surface heat dissipation copper foil 5505 mm )
(copper foil laminated on each layer)
θJA = 47.0°C/W
(2) 4-layer board (surface heat dissipation copper foil 6.28 mm2)
(copper foil laminated on each layer)
θJA = 70.62°C/W
(3) 1-layer board (surface heat dissipation copper foil 6.28 mm2)
θJA = 201.6°C/W
(4) IC only
θJA = 462.9°C/W
3.0
(1)2.66 W
2.0
(2)1.77 W
(3)0.62 W
(4)0.27 W
0
0
25
50
75
100
125
150
Board specification: Glass-Epoxy, 70mm x 70mm x 1.6mm
Copper foil thickness: Front side and reverse side 70µm be used,
2nd and 3rd 35µm be used.
Ambient temperature: Ta [°C]
Figure 53. Thermal Derating Characteristics
(VQFN016V3030)
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BD9B200MUV
I/O equivalence circuit(s)
6. FB
7. FREQ
8. MODE
9. SS
10.11.12. SW
13. BOOT
PVIN
BOOT
PVIN
PVIN
BOOT
SW
SW
14. PGD
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BD9B200MUV
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded, the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
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BD9B200MUV
Operational Notes – continued
11.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 54. Example of monolithic IC structure
13.
Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD9B200MUV
Ordering Information
B
D
9
B
2
Part Number
0
0
M
U
Package
VQFN016V3030
V
-
E2
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagrams
VQFN016V3030 (TOP VIEW)
Part Number Marking
D
9
B
2
0
0
LOT Number
1PIN MARK
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BD9B200MUV
Physical Dimension, Tape and Reel Information
Package Name
VQFN016V3030
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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BD9B200MUV
Revision History
Date
Revision
28.Aug.2015
001
Changes
New Release
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Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001