June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown (non-latching auto restart) • Self-protecting when in high current/high temperature applications – increasing reliability • Short circuit protection • Device protects both itself and the load from over current conditions • Over voltage protection • • • Input •protection (ESD) Particularly important when driving inductive loads, to protect against over-voltage breakdown • No external ESD protection required • 3.3V and µC compatible inputs • No gate drivers or level shifters required • Status flag pin with three voltage levels (ZXMS6002G, ZXMS6003G only) • Provides feedback on the condition of the MOSFET, thereby providing feedback on the condition of the load Applications • Lamp driver • Motor driver • Solenoid driver • Compatible with a wide variety of resistive, capacitive and inductive loads • 5V microcontroller compatible low side switch Page 1 June 2010 IntelliFET - low side self-protected IntelliFET family The need for self-protected MOSFETs While it’s been said many times before, the automotive electrical environment is tough! It is a lot tougher than consumer electronics' for example. Figure 1 provides the classic illustration: the nominal 12V DC battery voltage of a vehicle swinging from a negative 12V (due to a reversed battery) through to a positive 125V DC (due to load dump transients and inductive field decay). Figure1 Voltage Load Dump 125V Noise, Transients ~85V Jump Start 24V 12V, nominal 0 Time Crank Voltage 6V Noise, Transients Reverse Battery Apart from routine events such as these there are considerations as to what happens if: • The wrong load, an overload (e.g. wrong type of bulb), is connected. • The load is stalled or develops a short circuit or partial short circuit. • A foreign object (a screwdriver) short circuits the load. • Module cooling proves insufficient in extreme (fault) circumstances and devices overheat. Similarly, Self protected MOSFETs are ideally suited to use in harsh industrial environments where there is a need for immunity from radiated and conducted emissions.Consequently, self-protected MOSFETs have proliferated into a number of non automotive applications that include: • • • • • • • • Remote I/O controller outputs (Programmable Logic Controllers) Distributed I/O Modules Relay driving Lamp driving Proximity switches Alarm system GPS system Relay driving in HVAC applications When solid state electronics were first deployed in automotive applications supporting electric windows for example, system designers either relied on the inherent ruggedness of large MOSFETs to absorb the energy from transient load dumps or used discrete voltage clamp circuits. Such approaches only served to increase both complexity and cost. The self-protected MOSFET was therefore developed to address such limitations and improve overall circuit reliability. Introducing the Diodes Inc IntelliFET portfolio of self-protected MOSFETs Self-protected MOSFETs integrate a power MOSFET with a complete array of protection circuits that guard against ESD, over-current, over-voltage, and over-temperature conditions. A typical block diagram of a low-side protected MOSFET is shown in Fig. 2 Page 2 June 2010 IntelliFET - low side self-protected IntelliFET family Figure 2 – Block Diagram Lowside self-protected MOSFET D IN Human body ESD protection Over-voltage Protection Over-current protection dV/dt limit Logic Overtemperature protection. S When an ‘intelligent’ MOSFET senses the presence of any one of these potentially catastrophic conditions, it protects both itself and the load connected to it. The integration of these protection functions therefore improves overall system reliability. The addition of features such as status flags also helps improve overall system performance by providing a diagnostics capability that can aid the isolation and rectification of faults within a vehicle. Self-protected MOSFETs can be categorised as either low side devices, where the load is switched with reference to ground, or high side devices, where the load is switched with reference to a floating point. This know-how guide outlines the function, operation and competitive environment of the Diodes Inc low-side portfolio. Page 3 June 2010 IntelliFET - low side self-protected IntelliFET family Overview of the InteliFET low side family ZXMS6004/5DT8 – dual devices that provide customers with a thermally efficient alternative to SO8. ZXMS6004/5DG – drain connected to the tab (improved power handling capability). Released for those customers that don’t need the benefits of the features of the ZXMS6004FF. ZXMS6004/5SG – source connected to the tab – matches the pin-out of BSP75N. ZXMS6004FFTA – provides the performance of a BSP75 fet but occupies 85% less board space BSP75N - matches the pin-out (SOURCE connected to TAB) of the industry standard BSP75N. ZXMS6002G – has DRAIN connected to TAB as in the BSP75G, plus a fourth ‘STATUS’ pin providing a voltage-level indicative of the internal gate status. ZXMS6003G - has DRAIN connected to TAB as in the BSP75G, plus a fourth ‘PROGRAM/STATUS’ pin requiring an external resistor to be connected between itself and Vin Adjustments to the value of this resistor provide for adjustment of the operational current-limit. With the external resistor in place, the ‘PROGRAM/STATUS’ pin also provides a voltage-level indicative of the internal gate status, in similar fashion to the ZXMS600 BSP75G - has DRAIN connected to TAB, offering improved thermal impedance (and hence power handling capability) over the Zetex BSP75N, but with different pin-out. ZXMS6003G - has DRAIN connected to TAB as in the BSP75G, plus a fourth ‘PROGRAM/STATUS’ pin requiring an external resistor to be connected between itself and Vin Adjustments to the value of this resistor provide for adjustment of the operational current-limit. ZXMS6001G – has the drain connected to TAB asin the BSP75G but has a 500uA input current and is able to operate down to 4V input. With the external resistor in place, the ‘PROGRAM/STATUS’ pin also provides a voltage-level indicative of the internal gate status, in similar fashion to the ZXMS6002G Part Number TAB BVDSS (V) BSP75G BSP75N ZXMS6001N3 ZXMS6002G ZXMS6003G ZXMS6004DG ZXMS6004FF ZXMS6004SG ZXMS6004DT8 ZXMS6005DG ZXMS6005SG ZXMS6005DT8 Drain Source Source Drain Drain Drain N/A Source Drain Source 60 60 60 60 60 60 60 60 60 60 60 60 ID(A) VIN = 5V 1.4 1.2 1.1 1.4 1.4 1.3 1.3 1.3 1.2 2 2 1.8 PD (W) 2.5 1.5 1.5 2.5 2.5 3 1.5 1.6 2.3 1.6 1.6 1.6 RDS (on) Max(Ω) @VIN = 3V 5V 10V 0.675 0.55 0.675 0.55 2 0.675 0.675 0.55 0.675 0.55 0.6 0.5 0.6 0.5 0.6 0.5 0.6 0.5 0.25 0.2 0.25 0.2 0.25 0.2 - VDS(S/C) VIN = 5V 36 36 36 36 36 36 36 36 36 36 36 36 EAS (mJ) 550 550 550 550 550 490 90 480 210 490 490 210 Package Outlines SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT23F SOT223 SM8 SOT223 SOT223 SM8 Page 4 June 2010 IntelliFET - low side self-protected IntelliFET family Relevant to ZXMS6002G, ZXMS6003G only: Both of these devices feature a STATUS pin, the voltage on which is identical to that being applied internally to the MOSFET gate. This pin can therefore be used to indicate the mode of device operation (normal, over-current-shutdown or over-temperature shutdown) as shown below: Current Limiting and Over Temp Shutdown Status Indication at Vin=5V Current Limiting and Over Temp Shutdown Status Indication at Vin=10V 8 8 VIN =5V 7 6 5 Typical VStatus (V) Typical VStatus (V) 7 Normal Operation 4 3 Current limit operating 2 Over Temp Shutdown 1 0 25 50 75 100 125 150 175 200 225 250 Normal Operation VIN = 10V 6 5 4 3 Current limit operating 2 Over Temp Shutdown 1 0 25 50 75 100 125 150 175 200 225 250 Typical Temperature (°C) Typical Temperature (°C) The behaviour shown is typical of that observed on the ZXMS6002G, and also typical of that observed on the ZXMS6003G device with Rprog = 24k…• 湮捥整敢睴敥楖湡呓呁单瀠湩 Relevant to ZXMS6003G only: Unlike all other devices within this family, the ZXMS6003G requires connection of an external resistor (Rprog) in order to function. Rprog is connected between the Vin and STATUS pins, and its value determines the operational current-limit as shown below. The customer may use this trimming capability in order to provide a desirable level of start-up current limitation, when driving loads which generate high initial current surges (e.g. lamps, motors). Current Limit (A) This feature may also be used to adjust the degree of IV protection which will apply under load-dump conditions. 1 VIN = 10V VIN = 5V 0.1 0 20 40 60 80 Rprog (kΩ) Current Limit vs Rprog 100 Page 5 June 2010 IntelliFET - low side self-protected IntelliFET family Function and operation of Diodes’ Low Side IntelliFET portfolio The protection circuitry described in the following paragraphs is based on the Diodes Inc ZXMS6xxx series of low side self-protected MOSFET (IntelliFET). These devices have a VDS of 60V and a typical RDS(ON) 景戠瑥敷湥㔠洰 …湡⸰☵ ; It operates in circuit in much the same way as a standard unprotected MOSFET. The device is turned on by a logic high (5V) however unlike a standard MOSFET a small current of the order 100uA is drawn by the input to power the on board protection circuitry. Similarly, the device is turned off by a logic low of <0.7V. Figure 3 illustrates this point. Figure 3 – Function of a low-side self protected MOSFET D Over-Voltage Clamping I Over-Current Protection ESD Over-Temperature Protection S The IntelliFET portfolio features an ESD rating of 4kV based on the Electrostatic discharge model. ESD protection is provided on the input by clamp diodes to protect both the internal gate and the protection circuitry and across the Drain-Source is protected by its built-in Miller capacitance, active clamping, and reverse (body-drain) diode. Over-voltage protection is implemented via a Zener diode stack operating as an active clamp that turns the gate on when the VDS exceeds 65V. Active clamping ensures that the whole of the MOSFET is turned on and the voltage energy dissipated across the entire area of the MOSFET. For example, when a relay deactivates, any generated transient would be clamped at 65V for the duration of the transient and the energy dissipated. Once the transient’s energy has been dissipated the device would revert to normal off state. Page 6 June 2010 IntelliFET - low side self-protected IntelliFET family Figure 4 – Overvoltage protection – active clamping D Over-Voltage Clamping Internal active clamp circuit protects the MOSFET and load for voltages >65V (typ.) I S Over-temperature protection is provided by a temperature sensor and a hysteresis circuit. This over temperature thermal shutdown circuit is active whenever the input is logic high (usually 5V) and constantly monitors the junction temperature. It does this completely independently of over-current, clamping etc. Once the temperature of the MOSFET device reaches the threshold temperature of 0 typically 175 C the thermal shutdown circuit turns the internal gate off and interrupts the dissipation. The hysteresis of this circuit ensures that the output of the device will turn back on again once the device has cooled by around 10°C. This behaviour is illustrated in Fig. 5. Note that during overtemperature hysteresis cycling, on the right of the chart, the over-current protection levels never return to the initial (25°C) values. Page 7 June 2010 IntelliFET - low side self-protected IntelliFET family Figure 5 – Over-temperature protection – thermal shutdown with hysteresis Tj=Tamb Tj=Ttrip Over-current protection is effected through a current limit circuit. During normal operation the full input voltage (5V) is delivered to the internal gate as long as the VDS is small and low dissipation is assured. However, if the load current rises sufficiently to generate a substantial VDS, then the device reacts by reducing the internal gate drive and restricting the drain current (ID). This functionality is illustrated in Figure 6. Page 8 June 2010 IntelliFET - low side self-protected IntelliFET family Figure6 – current limiting – typical output characteristics. Current limited by the device Rds(on) mode For example, at turn on an incandescent lamp has a low resistance that increases as the lamp heats up. If the lamp is being driven by a self-protected MOSFET the inrush current associated with this low resistance will be limited by the over-current protection circuit, protecting the MOSFET and prolonging the life of the lamp. The over-current and over-temperature protections are completely independent functions. In a cool ambient environment the over-current regulation may operate for substantial periods before temperatures approach the threshold of the over-temperature thermal shutdown circuit. In a hot enough ambient environment the over-temperature will turn-off the output even if there is little or no dissipation in the device. Normally though, the two functions work together. The normal protection sequence is that an excessive load condition causes the over-current circuit to reduce the gate drive and self-regulate the current. Then, if the condition persists for long enough, the device temperature rises until overtemperature cycling begins. Over-temperature cycling will continue until the Input voltage or overload conditions are removed. Page 9 June 2010 IntelliFET - low side self-protected IntelliFET family Competitive Environment • The IntelliFET market is Page 10 June 2010 IntelliFET - low side self-protected IntelliFET family Cross Reference to Infineon Competitor Part Basic specification of competitor part VDS clamp RDSON (mOhm) BSP75G BSP75N BSP76 (V) 60 60 42 BTS3410G 42 200 BTS3118N BTS3118D BSP77 BSP78 42 42 42 42 100 100 100 50 500 500 200 Diodes Near Equivalent Package SOT223 SOT223 SOT223 SO8 (dual) SOT223 Dpak SOT223 SOT223 Comment ZXMS6004DG ZXMS6004SG ZXMS6005DG ZXMS6005DT8 ZXMS6006DG ZXMS6006K ZXMS6005DG ZXMS6008DG Provides, same performance in smaller package Scheduled for release Q3 Scheduled for release Q3 Scheduled for release Q3 Scheduled for release Q3 Cross Reference to ST Competitor Part Basic specification of competitor part RDSON VDS clamp (V) Package Diodes Near Equivalent Comment (mOhm) VNS1NV04D 42 250 SO8 (dual) ZXMS6005DT8 VNS3NV04D 42 120 SO8 (dual) ZXMS6006DT8 VNN7NV04P VNS7NV04P VNLS160N3 VNLS160N5 VNN7NV04P VNS7NV04P VND7NV04P VNN3NV04 VNS3NV04D VND3NV04 VNN1NV04 VNS1NV04D VND1NV04 42 42 42 42 42 42 42 42 42 42 42 42 42 60 60 160 160 60 60 60 120 120 120 250 250 250 SOT223 SO8 SOT223 DPak SOT223 SO8 DPak SOT223 SO8 DPak SOT223 SO8 DPak ZXXMS6008DG ZXMS6008N8 ZXMS6007DG ZXMS6007K ZXMS6008DG ZXMS6008N8 ZXMS6008K ZXMS6007DG ZXMS6007N8 ZXMS6007K ZXMS6005DG ZXMS6005N8 ZXMS6006K Provides, same performance in smaller package Provides, same performance in smaller package Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Scheduled for Q3 release Page 11 June 2010 IntelliFET - low side self-protected IntelliFET family Cross reference to NXP Competitor Part BUK127-50DL BUK127-50GT BUK117-50DL Basic specification of competitor part VDS clamp (V) RDSON 50 50 50 200 200 100 Package Diodes Near Equivalent SOT223 SOT223 SOT223 ZXMS6005DG ZXMS6005DG ZXMS6006DG Comment (mOhm) scheduled for Q3 release Target Customers • Automotive electronics manufacturers – see list below • Industrial/security peripheral driving applications • Motor control design and manufacturers Target Markets • Automotive electronics manufacturers – see list below • Industrial/security peripheral driving applications • Motor control design and manufacturers • Automotive electronics manufacturers include: • Delphi – Hella – Valeo – Johnson Controls – Motorola AIEG – Bosch – Siemens VDO – Lear – TRW – AB Automotive Page 12 June 2010 IntelliFET - low side self-protected IntelliFET family Supporting information • • Samples – available now Datasheets available online www.diodes.com • To download selected data sheet, enter p/n in our website Product Data Sheet search. Solderability, Reliability and Environmental Highlights Qualified to rigorous AEC-Q101 (automotive) standards for high reliability Compliant with RoHS environmental standards and lead free design Pb-Free, 100% Matte-Tin Plating Withstands 260°C Solder Reflow Meets Moisture Sensitivity Level (MSL Sales offices The Americas Europe Taiwan Shanghai Shenzhen Korea 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 Tel: (+1) 805 446 4800 Fax: (+1) 805 446 4850 Kustermannpark Balanstraße 59, D-81541 München Germany Tel: (+49) 894 549 490 Fax: (+49) 894 549 4949 7F, No. 50, Min Chuan Road Hsin-Tien Taipei, Taiwan Tel: (+886) 289 146 000 Fax: (+886) 289 146 639 Rm. 606, No.1158 Changning Road Shanghai, China Tel: (+86) 215 241 4882 Fax (+86) 215 241 4891 Room A1103-04, ANLIAN Plaza, #4018 Jintian Road Futian CBD, Shenzhen, China Tel: (+86) 755 882 849 88 Fax: (+86) 755 882 849 99 6 Floor, Changhwa B/D, 1005-5 Yeongtong-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea 443-813 Tel: (+82) 312 731 884 Fax: (+82) 312 731 885 Page 13 June 2010 IntelliFET - low side self-protected IntelliFET family Page 14