SiC Power Module Data Sheet BSM180D12P3C007 lApplication lCircuit diagram Motor drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8(N.C) Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss. *Do not connnect to NC pin. 2) High-speed switching possible. 3) Reduced temperature dependence. lConstruction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. lDimensions & Pin layout (Unit : mm) 10 9 8 7 6 5 4 1 2 3 (M2.6 FOR SELF-TAPPING SCREW) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lAbsolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage Conditions Symbol VDSS G-S short Gate-source voltage(+) Gate-source voltage(-) Drain current *1 Source current * VGSS D-S short ID IDRM IS DC (Tc=60°C) 1 Limit 1200 22 Pulse (Tc=60°C) 1ms *2 DC (Tc=60°C) VGS=18V 2 ISRM Total power disspation *3 Max Junction Temperature Junction temperature Storage temperature Ptot Tjmax Tjop Tstg Isolation voltage *4 Visol Pulse (Tc=60°C) 1ms VGS=18V * Pulse (Tc=60°C) 10ms VGS=0V *2 Tc=25°C Terminals to baseplate, f=60Hz AC 1min. -4 180 360 180 360 360 880 175 - V A W -40 to150 -40 to125 °C 2500 Vrms 4.5 Main Terminals : M6 screw Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Mounting torque Unit N·m (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. (*3) Tj is less than 175°C (*4) Actual measurement is 3000Vrms/1sec. in accordance with UL1557. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristics (Tj=25°C) Parameter Conditions Symbol Static drain-source on-state voltage Drain cutoff current Tj=25°C Tj=125°C Tj=150°C VDS(on) IC=180A, VGS=18V VDS=1200V, VGS=0V IDSS Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VGS=0V, IS=180A Source-drain voltage VSD VGS=18V, IS=180A Gate-source threshold voltage VGS(th) VDS=10V, ID=50mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= -4V, VDS=0V td(on) VGS(on)=18V, VGS(off)= -2V *5 tr VDS=600V trr Switching characteristics ID=180A td(off) RG(on)=8.2W, RG(off)=4.7W inductive load tf Input capacitance Gate Registance Stray Inductance VDS=10V, VGS=0V,200kHz Tj=25°C Ciss RGint Ls Creepage Distance - Clearance Distance - Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal Min. － － － － － － － － 2.7 － -0.5 － － － － － － - Typ. 1.8 2.7 3.1 2.1 2.6 2.8 1.4 1.9 2 － － 50 70 35 165 50 9 1.4 25.0 11.5 19.0 9.5 13.0 － － Max. 2.6 － 4 2 2.6 4.3 － － 5.6 0.5 － － － － － － － 0.17 0.21 Unit V mA V V mA ns nF W nH mm mm mm mm － UMOSFET (1/2 module) *6 °C/W 6 － SBD (1/2 module) * Case to heat sink, per 1 module, Case-to-heat sink Rth(c-f) 0.035 °C/W Thermal resistance Thermal grease appied *7 (*5) In order to prevent self turn-on, it is recommended to apply negative gate bias. (*6) Measurement of Tc is to be done at the point just beneath the chip. (*7) Typical calue is measured by using thermally conductive grease of λ=0.9W/(m・K). (*8) SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. Junction-to-case thermal resistance Rth(j-c) lWaveform for switching test Eon=Id×Vds Eoff=Id×Vds trr Vsurge Vds 90% Id 2% 90% 10% 10% 2% 10% 2% 2% 90% 0V 10% Vgs td(off) tr td(on) ton www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. tf toff 3/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.1 Typical Output Characteristics [ Tj=25ºC ] 8 360 VGS=18V VGS=18V 7 VGS=16V VGS=20V Drain-Source Voltage : VDS [V] 300 VGS=14V Drain Current : ID [A] Fig.2 Drain-Source Voltage vs. Drain Current [ Tj=25ºC ] 240 VGS=12V 180 120 VGS=10V 60 6 5 Tj=150ºC 4 Tj=125ºC 3 Tj=25ºC 2 1 0 0 0 2 4 6 0 8 60 Drain-Source Voltage : VDS [V] 180 240 300 360 Drain Current : ID [A] Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ] 30 Tj=25ºC 4 3 2 ID=180A ID=120A ID=90A ID=60A 1 0 12 14 16 18 20 22 24 Static Drain - Source On-State Resistance : RDS(on) [mW] 5 Drain-Source Voltage : VDS [V] 120 Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. ID=180A 25 VGS=12V 20 VGS=14V 15 VGS=16V 10 VGS=18V VGS=20V 5 0 0 50 100 150 200 250 Junction Temperature : Tj [ºC] 4/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode 1000 360 300 Source Current : Is [A] Source Current : Is [A] Tj=25ºC Tj=150ºC Tj=150ºC Tj=125ºC Tj=150ºC 100 Tj=125ºC Tj=25ºC 10 VGS=0V VGS=18V Tj=125ºC 240 Tj=25ºC 180 Tj=150ºC Tj=125ºC 120 60 Tj=25ºC VGS=0V VGS=18V 0 1 0 1 2 3 0 4 2 3 4 Source-Drain Voltage : VSD [V] Source-Drain Voltage : VSD [V] Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage 1.0E+03 360 VDS=20V VDS=20V 1.0E+02 Tj=150ºC 300 Tj=150ºC Tj=125ºC 1.0E+01 Drain Current : ID [A] Drain Current : ID [A] 1 240 1.0E+00 Tj=25ºC 180 120 60 Tj=125ºC 1.0E-01 Tj=25ºC 1.0E-02 1.0E-03 1.0E-04 0 0 5 10 0 15 10 15 Gate-Source Voltage : VGS [V] Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 5 5/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.10 Switching Characteristics [ Tj=125ºC ] Fig.9 Switching Characteristics [ Tj=25ºC ] 1000 1000 td(off) 100 Switching Time : t [ns] Switching Time : t [ns] td(off) tr tf td(on) 10 VDS=600V VGS(on)=18V VGS(off)= -2V RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD 100 td(on) 10 VDS=600V VGS(on)=18V VGS(off)= -2V RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD 1 1 0 100 200 300 0 400 100 200 300 400 Drain Current : ID [A] Drain Current : ID [A] Fig.11 Switching Characteristics [ Tj=150ºC ] Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ] 25 1000 td(off) 100 tr tf td(on) 10 VDS=600V VGS(on)=18V VGS(off)= -2V VDS=600V VGS(on)=18V VGS(off)= -2V RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD 20 Switching Loss [mJ] Switching Time : t [ns] tr tf RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD 15 Eon Eoff 10 5 Err 0 1 0 100 200 300 0 400 200 300 400 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 100 6/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.13 Switching Loss vs. Drain Current [ Tj=125ºC ] Fig.14 Switching Loss vs. Drain Current [ Tj=150ºC ] 25 25 15 Eon 20 Switching Loss [mJ] Switching Loss [mJ] 20 Eoff 10 5 15 0 100 200 300 Err 0 0 400 10 VDS=600V VGS(on)=18V VGS(off)= -2V RG=8.2W INDUCTIVE LOAD 1 400 100 trr Irr 10 10 VDS=600V VGS(on)=18V VGS(off)= -2V RG=8.2W INDUCTIVE LOAD 1 1 1 0 400 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Recovery Current : Irr [A] Irr Recovery Time : trr [ns] Recovery Time : trr [ns] trr 300 300 100 100 200 200 Fig.16 Recovery Characteristics vs. Drain Current [ Tj=125ºC ] 100 100 100 Drain Current : ID [A] Fig.15 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] 0 Eoff 5 Drain Current : ID [A] 10 Eon 10 Err 0 VDS=600V VGS(on)=18V VGS(off)= -2V RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD Recovery Current : Irr [A] VDS=600V VGS(on)=18V VGS(off)= -2V RG(on)=8.2W RG(off)=4.7W INDUCTIVE LOAD 100 200 300 400 Drain Current : ID [A] 7/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.18 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] Fig.17 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] 100 100 10000 VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD 10 10 VDS=600V VGS(on)=18V VGS(off)= -2V RG=8.2W INDUCTIVE LOAD 1 Switching Time : t [ns] Irr Recovery Current : Irr [A] Recovery Time : trr [ns] trr 1 0 100 200 300 1000 tr td(on) 100 tf 10 400 1 10 100 Gate Resistance : RG [W] Drain Current : ID [A] Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ] Fig.20 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ] 10000 10000 VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD 1000 Switching Time : t [ns] Switching Time : t [ns] td(off) td(off) tr tf 100 td(on) 10 VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD 1000 td(off) tr tf 100 td(on) 10 1 10 100 1 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 100 Gate Resistance : RG [W] 8/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.21 Switching Loss vs. Gate Resistance [ Tj=25ºC ] Fig.22 Switching Loss vs. Gate Resistance [ Tj=125ºC ] 30 30 20 VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD 25 Switching Loss [mJ] 25 Switching Loss [mJ] Eon VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD Eoff 15 10 5 20 Eon Eoff 15 10 5 Err Err 0 0 1 10 100 1 100 Gate Resistance : RG [W] Gate Resistance : RG [W] Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ] Fig.24 Typical Capacitance vs. Drain-Source Voltage 30 1.E-07 VDS=600V ID=180A VGS(on)=18V VGS(off)= -2V INDUCTIVE LOAD 20 Tj=25ºC VGS=0V 200kHz Eon Capasitance : C [F] 25 Switching Loss [mJ] 10 Eoff 15 10 Ciss 1.E-08 Coss 1.E-09 5 Crss Err 0 1 10 1.E-10 0.01 100 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 9/10 2016.02 - Rev.C Data Sheet BSM180D12P3C007 lElectrical characteristic curves (Typical) Fig.26 Normalized Transient Thermal Impedance Gate-Source Voltage : VGS [V] 25 20 15 10 5 VD=180A VDS=600V Tj=25ºC 0 -5 0 200 400 600 800 Normalized Transient Thermal Impedance : Rth Fig.25 Gate Charge Characteristics [ Tj=25ºC ] 0.1 Single Pulse TC=25ºC Per unit base DMOS part : 0.17K/W SBD part : 0.21K/W 0.01 0.001 0.01 0.1 1 10 Time [s] Total Gate charge : Qg [C] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1 10/10 2016.02 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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