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SiC Power Module
Data Sheet
BSM180D12P3C007
lApplication
lCircuit diagram
 Motor drive
1
 Inverter, Converter
 Photovoltaics, wind power generation.
10
9
8(N.C)
 Induction heating equipment.
3,4
5
6
7(N.C)
lFeatures
2
1) Low surge, low switching loss.
*Do not connnect to NC pin.
2) High-speed switching possible.
3) Reduced temperature dependence.
lConstruction
This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.
lDimensions & Pin layout (Unit : mm)
10
9
8
7
6
5
4
1
2
3
(M2.6 FOR SELF-TAPPING
SCREW)
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© 2016 ROHM Co., Ltd. All rights reserved.
1/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Drain-source voltage
Conditions
Symbol
VDSS G-S short
Gate-source voltage(+)
Gate-source voltage(-)
Drain current *1
Source current *
VGSS
D-S short
ID
IDRM
IS
DC (Tc=60°C)
1
Limit
1200
22
Pulse (Tc=60°C) 1ms *2
DC (Tc=60°C) VGS=18V
2
ISRM
Total power disspation *3
Max Junction Temperature
Junction temperature
Storage temperature
Ptot
Tjmax
Tjop
Tstg
Isolation voltage *4
Visol
Pulse (Tc=60°C) 1ms VGS=18V *
Pulse (Tc=60°C) 10ms VGS=0V *2
Tc=25°C
Terminals to baseplate,
f=60Hz AC 1min.
-4
180
360
180
360
360
880
175
-
V
A
W
-40 to150
-40 to125
°C
2500
Vrms
4.5
Main Terminals : M6 screw
Mounting to heat shink : M5 screw
3.5
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
Mounting torque
Unit
N·m
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax.
(*3) Tj is less than 175°C (*4) Actual measurement is 3000Vrms/1sec. in accordance with UL1557.
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© 2016 ROHM Co., Ltd. All rights reserved.
2/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristics (Tj=25°C)
Parameter
Conditions
Symbol
Static drain-source on-state
voltage
Drain cutoff current
Tj=25°C
Tj=125°C
Tj=150°C
VDS(on) IC=180A, VGS=18V
VDS=1200V, VGS=0V
IDSS
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VGS=0V, IS=180A
Source-drain voltage
VSD
VGS=18V, IS=180A
Gate-source threshold voltage VGS(th) VDS=10V, ID=50mA
VGS=22V, VDS=0V
IGSS
Gate-source leakage current
VGS= -4V, VDS=0V
td(on) VGS(on)=18V, VGS(off)= -2V *5
tr
VDS=600V
trr
Switching characteristics
ID=180A
td(off) RG(on)=8.2W, RG(off)=4.7W
inductive load
tf
Input capacitance
Gate Registance
Stray Inductance
VDS=10V, VGS=0V,200kHz
Tj=25°C
Ciss
RGint
Ls
Creepage Distance
-
Clearance Distance
-
Terminal to heat sink
Terminal to terminal
Terminal to heat sink
Terminal to terminal
Min.
-
-
-
-
-
-
-
-
2.7
-
-0.5
-
-
-
-
-
-
-
Typ.
1.8
2.7
3.1
2.1
2.6
2.8
1.4
1.9
2
-
-
50
70
35
165
50
9
1.4
25.0
11.5
19.0
9.5
13.0
-
-
Max.
2.6
-
4
2
2.6
4.3
-
-
5.6
0.5
-
-
-
-
-
-
-
0.17
0.21
Unit
V
mA
V
V
mA
ns
nF
W
nH
mm
mm
mm
mm
-
UMOSFET (1/2 module) *6
°C/W
6
-
SBD (1/2 module) *
Case to heat sink, per 1 module,
Case-to-heat sink
Rth(c-f)
0.035
°C/W
Thermal resistance
Thermal grease appied *7
(*5) In order to prevent self turn-on, it is recommended to apply negative gate bias.
(*6) Measurement of Tc is to be done at the point just beneath the chip.
(*7) Typical calue is measured by using thermally conductive grease of λ=0.9W/(m・K).
(*8) SiC devices have lower short cuicuit withstand capability due to high current density.
Please be advised to pay careful attention to short cuicuit accident and try to adjust protection
time to shutdown them as short as possible.
Junction-to-case thermal
resistance
Rth(j-c)
lWaveform for switching test
Eon=Id×Vds
Eoff=Id×Vds
trr
Vsurge
Vds
90%
Id
2%
90%
10%
10%
2%
10%
2%
2%
90%
0V
10%
Vgs
td(off)
tr
td(on)
ton
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© 2016 ROHM Co., Ltd. All rights reserved.
tf
toff
3/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.1 Typical Output Characteristics [ Tj=25ºC ]
8
360
VGS=18V
VGS=18V
7
VGS=16V
VGS=20V
Drain-Source Voltage : VDS [V]
300
VGS=14V
Drain Current : ID [A]
Fig.2 Drain-Source Voltage vs. Drain Current
[ Tj=25ºC ]
240
VGS=12V
180
120
VGS=10V
60
6
5
Tj=150ºC
4
Tj=125ºC
3
Tj=25ºC
2
1
0
0
0
2
4
6
0
8
60
Drain-Source Voltage : VDS [V]
180
240
300
360
Drain Current : ID [A]
Fig.4 Static Drain - Source On-State Resistance
vs. Junction Temperature
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage [ Tj=25ºC ]
30
Tj=25ºC
4
3
2
ID=180A
ID=120A
ID=90A
ID=60A
1
0
12
14
16
18
20
22
24
Static Drain - Source On-State Resistance
: RDS(on) [mW]
5
Drain-Source Voltage : VDS [V]
120
Gate-Source Voltage : VGS [V]
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ID=180A
25
VGS=12V
20
VGS=14V
15
VGS=16V
10
VGS=18V
VGS=20V
5
0
0
50
100
150
200
250
Junction Temperature : Tj [ºC]
4/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
360
300
Source Current : Is [A]
Source Current : Is [A]
Tj=25ºC
Tj=150ºC
Tj=150ºC
Tj=125ºC
Tj=150ºC
100
Tj=125ºC
Tj=25ºC
10
VGS=0V
VGS=18V
Tj=125ºC
240
Tj=25ºC
180
Tj=150ºC
Tj=125ºC
120
60
Tj=25ºC
VGS=0V
VGS=18V
0
1
0
1
2
3
0
4
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.7 Drain Current vs. Gate-Source Voltage
Fig.8 Drain Current vs. Gate-Source Voltage
1.0E+03
360
VDS=20V
VDS=20V
1.0E+02
Tj=150ºC
300
Tj=150ºC
Tj=125ºC
1.0E+01
Drain Current : ID [A]
Drain Current : ID [A]
1
240
1.0E+00
Tj=25ºC
180
120
60
Tj=125ºC
1.0E-01
Tj=25ºC
1.0E-02
1.0E-03
1.0E-04
0
0
5
10
0
15
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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© 2016 ROHM Co., Ltd. All rights reserved.
5
5/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ]
1000
1000
td(off)
100
Switching Time : t [ns]
Switching Time : t [ns]
td(off)
tr
tf
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
100
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
1
1
0
100
200
300
0
400
100
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current
[ Tj=25ºC ]
25
1000
td(off)
100
tr
tf
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
20
Switching Loss [mJ]
Switching Time : t [ns]
tr
tf
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
15
Eon
Eoff
10
5
Err
0
1
0
100
200
300
0
400
200
300
400
Drain Current : ID [A]
Drain Current : ID [A]
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100
6/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current
[ Tj=125ºC ]
Fig.14 Switching Loss vs. Drain Current
[ Tj=150ºC ]
25
25
15
Eon
20
Switching Loss [mJ]
Switching Loss [mJ]
20
Eoff
10
5
15
0
100
200
300
Err
0
0
400
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG=8.2W
INDUCTIVE
LOAD
1
400
100
trr
Irr
10
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG=8.2W
INDUCTIVE
LOAD
1
1
1
0
400
Drain Current : ID [A]
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Recovery Current : Irr [A]
Irr
Recovery Time : trr [ns]
Recovery Time : trr [ns]
trr
300
300
100
100
200
200
Fig.16 Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
100
100
100
Drain Current : ID [A]
Fig.15 Recovery Characteristics vs.
Drain Current [ Tj=25ºC ]
0
Eoff
5
Drain Current : ID [A]
10
Eon
10
Err
0
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
Recovery Current : Irr [A]
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG(on)=8.2W
RG(off)=4.7W
INDUCTIVE
LOAD
100
200
300
400
Drain Current : ID [A]
7/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.18 Switching Characteristics vs. Gate
Resistance [ Tj=25ºC ]
Fig.17 Recovery Characteristics vs.
Drain Current [ Tj=150ºC ]
100
100
10000
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
10
10
VDS=600V
VGS(on)=18V
VGS(off)= -2V
RG=8.2W
INDUCTIVE
LOAD
1
Switching Time : t [ns]
Irr
Recovery Current : Irr [A]
Recovery Time : trr [ns]
trr
1
0
100
200
300
1000
tr
td(on)
100
tf
10
400
1
10
100
Gate Resistance : RG [W]
Drain Current : ID [A]
Fig.19 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
Fig.20 Switching Characteristics vs. Gate
Resistance [ Tj=150ºC ]
10000
10000
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
1000
Switching Time : t [ns]
Switching Time : t [ns]
td(off)
td(off)
tr
tf
100
td(on)
10
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
1000
td(off)
tr
tf
100
td(on)
10
1
10
100
1
Gate Resistance : RG [W]
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10
100
Gate Resistance : RG [W]
8/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
Fig.22 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
30
30
20
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
25
Switching Loss [mJ]
25
Switching Loss [mJ]
Eon
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
Eoff
15
10
5
20
Eon
Eoff
15
10
5
Err
Err
0
0
1
10
100
1
100
Gate Resistance : RG [W]
Gate Resistance : RG [W]
Fig.23 Switching Loss vs. Gate Resistance
[ Tj=150ºC ]
Fig.24 Typical Capacitance vs. Drain-Source
Voltage
30
1.E-07
VDS=600V
ID=180A
VGS(on)=18V
VGS(off)= -2V
INDUCTIVE
LOAD
20
Tj=25ºC
VGS=0V
200kHz
Eon
Capasitance : C [F]
25
Switching Loss [mJ]
10
Eoff
15
10
Ciss
1.E-08
Coss
1.E-09
5
Crss
Err
0
1
10
1.E-10
0.01
100
Gate Resistance : RG [W]
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0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
9/10
2016.02 - Rev.C
Data Sheet
BSM180D12P3C007
lElectrical characteristic curves (Typical)
Fig.26 Normalized Transient Thermal
Impedance
Gate-Source Voltage : VGS [V]
25
20
15
10
5
VD=180A
VDS=600V
Tj=25ºC
0
-5
0
200
400
600
800
Normalized Transient Thermal Impedance : Rth
Fig.25 Gate Charge Characteristics
[ Tj=25ºC ]
0.1
Single Pulse
TC=25ºC
Per unit base
DMOS part : 0.17K/W
SBD part : 0.21K/W
0.01
0.001
0.01
0.1
1
10
Time [s]
Total Gate charge : Qg [C]
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© 2016 ROHM Co., Ltd. All rights reserved.
1
10/10
2016.02 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R1102B
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