SMMA511DJ Datasheet

New Product
SMMA511DJ
Vishay Siliconix
N- and P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
N-CHANNEL
VDS (V)
P-CHANNEL
• High Quality Manufacturing Process Using SMM
Process Flow
12
- 12
RDS(on) (Ω) at VGS = ± 4.5 V
0.040
0.070
• Halogen-free According to IEC 61249-2-21
Definition
RDS(on) (Ω) at VGS = ± 2.5 V
0.048
0.100
• TrenchFET® Power MOSFETs
RDS(on) (Ω) at VGS = ± 1.8 V
0.063
0.140
4.5
- 4.5
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
ID (A)a
Configuration
N- and P-Pair
PowerPAK SC-70-6 Dual
1
S1
G2
2
G1
3
D1
G1
D2
D1
6
S2
D1
APPLICATION EXAMPLES
D2
G2
5
2.05 mm
4
S2
S1
D2
N-Channel MOSFET
P-Channel MOSFET
2.05 mm
Marking Code
MAX
Part # code
XXX
Lot Traceability
and Date code
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch for Portable Devices
ORDERING INFORMATION
Package
PowerPAK SC-70
Lead (Pb)-free and Halogen-free
SMMA511DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
N-CHANNEL
12
P-CHANNEL
- 12
Gate-Source Voltage
VGS
±8
±8
TC = 25 °Ca
4.5
- 4.5
TC = 70 °Ca
4.5
- 4.5
4.5
- 4.3
4.5
- 3.4
20
- 10
4.5
- 4.5
1.6
- 1.6
TC = 25 °C
6.5
6.5
TC = 70 °C
5
5
1.9
1.9
Continuous Drain Current (TJ = 150 °C)
TA = 25 °Ca, b, c
ID
TA = 70 °Ca, b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
IDM
TC = 25 °C a
TA = 25 °Cb, c
TA = 25 °Ca, c
IS
PD
TA = 70 °Ca, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
1.2
TJ, Tstg
UNIT
V
A
W
1.2
- 55 to + 150
260
°C
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1
New Product
SMMA511DJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
N-CHANNEL
PARAMETER
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
P-CHANNEL
SYMBOL
TYP.
MAX.
TYP.
MAX.
t≤5s
RthJA
52
65
52
65
Steady State
RthJC
12.5
16
12.5
16
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Package limit is ± 4.5 A.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS
VGS = 0 V, ID = 250 µA
N-Ch
12
-
-
VGS = 0 V, ID = - 250 µA
P-Ch
- 12
-
-
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
ID = 250 µA
N-Ch
-
12
-
ID = - 250 µA
P-Ch
-
-7
-
ID = 250 µA
N-Ch
-
- 2.8
-
ID = - 250 µA
P-Ch
-
2.1
-
VDS = VGS, ID = 250 µA
N-Ch
0.4
-
1
VDS = VGS, ID = - 250 µA
P-Ch
- 0.4
-
-1
VDS = 0 V, VGS = ± 8 V
N-Ch
-
-
± 100
P-Ch
-
-
± 100
VGS = 0 V
VDS = 12 V
N-Ch
-
-
1
VGS = 0 V
VDS = - 12 V
P-Ch
-
-
-1
VGS = 0 V
VDS = 12 V, TJ = 55 °C
N-Ch
-
-
10
VGS = 0 V
VDS = - 12 V, TJ = 55 °C
P-Ch
-
-
- 10
VGS = 4.5 V
VDS ≥ 5 V
N-Ch
15
-
-
VGS = - 4.5 V
VDS ≤ - 5 V
P-Ch
-8
-
-
VGS = 4.5 V
ID = 4.2 A
N-Ch
-
0.033
0.040
VGS = - 4.5 V
ID = - 3.3 A
P-Ch
-
0.058
0.070
VGS = 2.5 V
ID = 3.8 A
N-Ch
-
0.039
0.048
VGS = - 2.5 V
ID = - 2.8 A
P-Ch
-
0.082
0.100
VGS = 1.8 V
ID = 1.6 A
N-Ch
-
0.051
0.063
VGS = - 1.8 V
ID = - 0.7 A
P-Ch
-
0.111
0.140
VDS = 10 V, ID = 4.2 A
N-Ch
-
13
-
VDS = - 10 V, ID = - 3.3 A
P-Ch
-
9
-
V
mV/°C
V
nA
µA
A
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
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2
Crss
N-Channel
VDS = 6 V, f = 1 MHz
VGS = 0 V
P-Channel
VDS = - 6 V, f = 1 MHz
N-Ch
-
400
-
P-Ch
-
400
-
N-Ch
-
120
-
P-Ch
-
140
-
N-Ch
-
70
-
P-Ch
-
100
-
pF
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
New Product
SMMA511DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Dynamicb
Total Gate Charge
Qg
VGS = 8 V
VDS = 6 V, ID = 5.5 A
N-Ch
-
7.5
12
VGS = - 8 V
VDS = - 6 V, ID = - 4.3 A
P-Ch
-
8
12
N-Ch
VGS = 4.5 V
VGS = - 4.5 V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
tr
td(off)
Fall Time
Turn-On Delay Time
VGS = 4.5 V
6.8
-
5
7.5
N-Ch
-
0.6
-
P-Channel
VDS = - 6 V, ID = - 4.3 A
P-Ch
-
0.8
-
N-Ch
-
0.8
-
P-Ch
-
1.4
-
N-Ch
-
2.5
-
P-Ch
-
7
-
N-Ch
-
5
10
P-Ch
-
15
25
N-Ch
-
15
25
VGS = - 4.5 V
f = 1 MHz
N-Channel
VDD = 6 V, RL = 1.4 Ω
ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 6 V, RL = 1.8 Ω
ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
td(on)
Rise Time
Turn-Off Delay Time
VGS = - 4.5 V
4.5
P-Ch
td(on)
Rise Time
Turn-Off Delay Time
VGS = 4.5 V
-
N-Channel
VDS = 6 V, ID = 5.5 A
tr
td(off)
Fall Time
N-Channel
VDD = 6 V, RL = 1.4 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 6 V, RL = 1.8 Ω
ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω
tf
P-Ch
-
25
40
N-Ch
-
35
55
P-Ch
-
20
30
N-Ch
-
15
25
P-Ch
-
10
15
N-Ch
-
5
10
P-Ch
-
5
10
N-Ch
-
10
15
P-Ch
-
12
20
N-Ch
-
15
25
P-Ch
-
20
30
N-Ch
-
10
15
P-Ch
-
10
15
nC
Ω
ns
Source-Drain Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
TC = 25 °C
IS
ISM
VSD
VGS = 0 V
N-Ch
-
-
4.5
P-Ch
-
-
- 4.5
N-Ch
-
-
20
- 10
P-Ch
-
-
IS = 4.4 A
N-Ch
-
0.8
1.2
IS = - 3.4 A
P-Ch
-
- 0.8
- 1.2
N-Ch
-
15
30
P-Ch
-
30
60
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
N-Channel
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
N-Ch
-
8
20
P-Ch
-
12
24
Reverse Recovery Fall Time
ta
P-Channel
IF = - 3.4 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
-
8.5
-
P-Ch
-
14
-
N-Ch
-
8.5
-
P-Ch
-
16
-
Reverse Recovery Rise Time
tb
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
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New Product
SMMA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
10
VGS = 5 V thru 2.5 V
8
VGS = 2 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
VGS = 1.5 V
4
6
4
TC = 25 °C
2
TC = 125 °C
VGS = 1 V
0
0.0
0.4
0.8
1.2
1.6
TC = - 55 °C
0
0.0
2.0
0.5
VDS - Drain-to-Source Voltage (V)
2.0
Transfer Characteristics
0.10
600
VGS = 1.8 V
0.09
500
0.08
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.07
0.06
0.05
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
400
300
200
Coss
100
Crss
0.03
0
0
4
8
12
16
20
0
3
ID - Drain Current (A)
6
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
8
ID = 5.5 A
1.5
1.4
6
VDS = 6 V
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.0
VDS = 9.6 V
4
2
VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A
1.3
1.2
1.1
1.0
0.9
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
New Product
SMMA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.12
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
0.10
0.08
0.06
ID = 4.2 A, 125 °C
0.04
ID = 4.2 A, 25 °C
0.1
0.0
0.02
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Soure-Drain Diode Forward Voltage
0.8
20
0.7
ID = 250 µA
15
Power (W)
VGS(th) (V)
0.6
0.5
0.4
10
0.3
5
0.2
0.1
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
www.vishay.com
5
New Product
SMMA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
14
Power Dissipation (W)
I D - Drain Current (A)
12
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
New Product
SMMA511DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
www.vishay.com
7
New Product
SMMA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
2.0
VGS = 5 V thru 2.5 V
VGS = 2 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
8
6
4
VGS = 1.5 V
2
1.2
0.8
TC = 25 °C
0.4
TC = 125 °C
TC = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
0.0
0.0
2.0
0.6
0.9
1.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
700
0.30
600
0.25
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.3
0.20
0.15
VGS = 2.5 V
0.10
500
Ciss
400
300
Coss
200
Crss
0.05
100
VGS = 4.5 V
0
0.00
0
2
4
6
8
0
10
4
6
8
10
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
12
1.6
8
ID = 3.3 A
ID = 4.3 A
VDS = 6 V
1.4
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
2
I D - Drain Current (A)
VDS = 9.6 V
4
2
VGS = 4.5 V, 2.5 V, 1.8 V
1.2
1.0
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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8
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
New Product
SMMA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.20
10
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 3.3 A
TJ = 25 °C
1
0.15
0.10
125 °C
0.05
25 °C
0.00
0.1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
20
0.8
0.7
0.6
Power (W)
V GS(th) (V)
15
ID = 250 µA
0.5
5
0.4
0.3
- 50
10
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
I D - Drain Current (A)
Limited by
R DS(on)*
100 µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
BVDSS Limited
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
www.vishay.com
9
New Product
SMMA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
8
10
Power Dissipation (W)
I D - Drain Current (A)
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
New Product
SMMA511DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65281.
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
www.vishay.com
11
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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1
Document Number: 70487
Revision: 18-Oct-13
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Revision: 02-Oct-12
1
Document Number: 91000