LT1619 - Low Voltage Current Mode PWM Controller

LT1619
Low Voltage Current Mode
PWM Controller
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FEATURES
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DESCRIPTIO
The LT ®1619 is a fixed frequency PWM controller for
implementing current mode DC/DC converters with minimum external parts. The LT1619 operates with input
voltages ranging from 1.9V to 18V and is suitable for a
variety of battery-powered and distributed DC/DC converters. The internal rail-to-rail N-channel MOSFET driver
operates either from the input in the nonbootstrapped
mode or from the output in bootstrapped operation. The
driver is designed to drive a low side power transistor in
boost, SEPIC, flyback and other topologies.
Wide VIN Range: 1.9V to 18V
300kHz Fixed Frequency Current Mode Control
1A Rail-to-Rail N-Channel MOSFET Driver
Low 53mV Current Limit Threshold Voltage
Improves Efficiency
Implements Boost, SEPIC and Flyback Converters
Requiring Low Side Power Transistors
Internal Current Sense Amplifier
with Leading Edge Blanking
Up to 500kHz External Synchronization
Burst Mode® Operation for High Efficiency
at Light Load
140µA Quiescent Current
15µA Shutdown Current
8-Lead MSOP and SO Packages
Converter efficiency is improved at heavy loads with a
53mV current sense voltage and at light load with Burst
Mode operation. The operating frequency is internally set
at 300kHz. The oscillator can also be synchronized externally up to 500kHz. No load quiescent current is 140µA and
shutdown current is 15µA.
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APPLICATIO S
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The LT1619 is available in 8-lead MSOP and SO packages.
3.3V to 5V DC/DC Converters
Distributed Power Supplies
Isolated Power Supplies
, LTC and LT are registered trademarks of Linear Technology Corporation.
Burst Mode is a registered trademark of Linear Technology Corporation.
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TYPICAL APPLICATIO
Efficiency
VIN
3.3V
12.4k
2
3
75k
220pF
4
VIN
S/S
FB
DRV
LT1619
VC
GATE
GND
15nF
SENSE
8
7
6
+
0.1µF
C1
22µF
90
L1
5.6µH
5A
VOUT
5V
2.2A
0.1µF
M1
Si9804
5
D1
+
RSENSE
0.01Ω
C1: PANASONIC EEFCDOK220R
COUT: KEMET T495X227K010AS (×2)
D1: MBRD835L
L1: COILCRAFT DO5022P-562
1619 F01
COUT
440µF
EFFICIENCY (%)
1
37.4k
95
85
80
75
70
1
10
100
LOAD CURRENT (mA)
1000
1619 F01a
Figure 1. High Efficiency 3.3V to 5V DC/DC Converter
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LT1619
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ABSOLUTE
RATI GS
(Note 1)
Input Voltage (VIN) ................................... – 0.3V to 20V
Gate Drive Supply Voltage (DRV) ............. – 0.3V to 20V
Shutdown/Synch Voltage (S/S) ................ – 0.3V to 20V
Feedback Voltage (FB) .............................................. VIN
Compensation Voltage (VC) ...................................... 3V
Gate Drive Output Current (GATE) ........................ ±1.5A
Current Sense Voltage (SENSE) ................. – 0.5V to VIN
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Junction Temperature (Note 3) ............................. 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
TOP VIEW
S/S
FB
VC
GND
1
2
3
4
8
7
6
5
VIN
DRV
GATE
SENSE
LT1619EMS8
MS8 PACKAGE
8-LEAD PLASTIC MSOP
MS8 PART MARKING
TJMAX = 125°C, θJA = 200°C/ W
LTHC
ORDER PART
NUMBER
TOP VIEW
S/S 1
8
VIN
FB 2
7
DRV
VC 3
6
GATE
GND 4
5
SENSE
LT1619ES8
S8 PART MARKING
S8 PACKAGE
8-LEAD PLASTIC SO
1619
TJMAX = 125°C, θJA = 120°C/ W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VIN = VDRV = 2.5V, VS/S = VIN, COMP open, VSENSE = 0V unless otherwise noted.
PARAMETER
CONDITIONS
Reference Voltage
Measured at the FB Pin
Reference Line Regulation
1.9V ≤ VIN ≤ 18V
FB Input Bias Current
VFB = VREF
MIN
●
Error Amplifier Transconductance
1.22
TYP
MAX
UNITS
1.24
1.26
V
0.004
0.05
%/V
10
25
nA
80
170
260
µΩ –1
Error Amplifier Output Source Current
VFB = 1V, VCOMP = 1V
4
8.7
14
µA
Error Amplifier Output Sink Current
VFB = 1.5V, VCOMP = 1V
4
8.7
14
µA
Error Amplifier Clamp Voltage
VFB = 1V
1.6
2.2
V
1.65
1.85
V
●
1.9
18
V
●
220
360
kHz
500
kHz
Undervoltage Lockout Threshold
Input Voltage Range
Switching Frequency
1.9V ≤ VIN ≤ 18V
Synchronization Frequency Range
300
370
Maximum Duty Cycle
●
88
92
Current Limit Threshold
●
40
53
Burst Mode Operation Current Limit
10
%
66
mV
mV
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LT1619
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VIN = VDRV = 2.5V, VS/S = VIN, COMP open, VSENSE = 0V unless otherwise noted.
PARAMETER
CONDITIONS
Current Sense Input Current
VSENSE = 0V
●
MIN
TYP
MAX
UNITS
– 90
– 120
– 150
µA
Current Limit Delay
150
ns
Driver Output Rise Time
CL = 3300pF
30
ns
Driver Output Fall Time
CL = 3300pF
35
ns
Driver Output High Level
IOUT = – 20mA
IOUT = – 200mA
VDRV – 0.35
VDRV – 1.2
V
V
Driver Output Low Level
IOUT = 20mA
IOUT = 200mA
100
0.5
200
0.7
mV
V
Shutdown Driver Output Level
VS/S = 0V, IOUT = 20mA
100
200
mV
Idle Mode Driver Output Level
VS/S = VIN, VFB = 1.5V, IOUT = 20mA
100
200
mV
S/S Pin Current
VS/S = VIN
VS/S = 0V
4
–2
µA
µA
Operating Supply Current
VFB = 1V
Quiescent Supply Current
VS/S = VIN, VFB = 1.5V
Shutdown Supply Current
VS/S = 0V
VS/S = 0V, VIN = 18V, TA = 85°C
VDRV – 0.6
VDRV – 1.6
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●
Shutdown Threshold
mA
140
220
µA
15
40
19
µA
µA
1.2
V
33
µs
0.45
Shutdown Delay
12
Note 1: Absolute Maximum Ratings are those values beyond which the life
of the device may be impaired.
Note 2: The LT1619E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the – 40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
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Note 3: TJ is calculated from the ambient temperature TA, the power
dissipation PD and the thermal resistance θJA of the package according to
the formula:
TJ = TA + PD • θJA
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TYPICAL PERFOR A CE CHARACTERISTICS
Bandgap Voltage vs Temperature
VIN = 2.5V
5
TA = –40°C
1.243
4
1.241
4
1.239
TA = 85°C
2
1.237
1.235
1.233
VS/S = 2.5V
TA = 25°C
3
IS/S (µA)
BANDGAP VOLTAGE (V)
S/S Pin Current vs Temperature
IS/S vs VS/S
5
S/S PIN CURRENT (µA)
1.245
1
0
1.231
–1
1.229
–2
1.227
1.225
–40 –20
20
40
60
80
100 120
TEMPERATURE (°C)
1619 G01
2
1
0
VS/S = 0V
–1
–2
–3
0
3
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VS/S (V)
1619 G02
–3
–40 –20
0
20 40 60 80
TEMPERATURE (°C)
100 120
1619 G03
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LT1619
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TYPICAL PERFOR A CE CHARACTERISTICS
45
200
IDLE MODE SUPPLY CURRENT (µA)
SUPPLY CURRENT (µA)
40
35
TA = –40°C
30
TA = 25°C
25
TA = 85°C
20
15
10
2
4
VIN = 2.5V
190
180
170
160
150
140
–40 –20
5
0
Frequency Deviation from
Nominal vs Temperature
Idle Mode Supply Current
vs Temperature
6 8 10 12 14 16 18 20
INPUT VOLTAGE (V)
DEVIATION FROM NOMINAL FREQUENCY (%)
Shutdown Supply Current
vs Input Voltage
20 40 60 80
TEMPERATURE (°C)
0
100 120
Maximum Duty Ratio
vs Temperature
92
91
6
4
2
0
–2
80
–4
100
0
2
4
–6
–8
–10
– 40 – 20
–115
VIN = 2.5V
12 DUTY CYCLE = 0
–117
6
4
2
100
1619 G10
VIN = 2.5V
56
55
54
53
52
51
60
40
20
TEMPERATURE (°C)
0
80
– 90
VSENSE = 0V
TA = 25°C
– 95
–119
–121
–123
–125
–127
–129
–131
–135
–40 –20
100
SENSE Pin Input Bias Current
vs Sense Voltage
–100
–105
–110
–115
–120
–125
–133
80
100
1619 G09
SENSE PIN CURRENT (µA)
SENSE PIN CURRENT (µA)
14
8
80
57
SENSE Pin Input Bias Current
vs Temperature
10
60
40
20
TEMPERATURE (°C)
0
1619 G08
Burst Mode Operation Current
Limit Threshold vs Temperature
CURRENT LIMIT THRESHOLD (mV)
–4
50
–40 – 20
6 8 10 12 14 16 18 20
INPUT VOLTAGE (V)
1619 G07
40
20
60
0
TEMPERATURE (°C)
0
–2
58
CURRENT LIMIT THRESHOLD (mV)
FREQUENCY DEVIATION (%)
DUTY RATIO (%)
93
0
–40 –20
2
Current Limit Threshold
vs Temperature
TA = 25°C
NOMINAL FREQUENCY = 300kHZ
40
20
0
60
TEMPERATURE (°C)
4
1619 G06
8
VIN = 2.5V
94
VIN = 2.5V
NOMINAL FREQUENCY = 300kHz
6
Deviation from Nominal
Frequency vs Input Voltage
95
–20
8
1619 G05
1619 G04
90
–40
10
40
0
60
20
TEMPERATURE (°C)
80
100
–130
–10
0
10
20
30
40
50
60
VSENSE (mV)
1619 G11
1619 G12
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LT1619
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PI FU CTIO S
S/S (Pin 1): Shutdown and Synchronization. Shutdown is
active low with a typical threshold voltage of 0.9V. For
normal operation, the S/S pin is tied to VIN. To externally
synchronize the controller, drive the S/S pin with pulses.
SENSE (Pin 5): The Input of the Current Sense Amplifier.
The SENSE pin is connected to the source of the N-channel
MOSFET and to a sense resistor to the ground. The current
limit threshold is internally set at 53mV, giving a maximum
switch current of 53mV/RSENSE.
FB (Pin 2): The inverting Input of the Error Amplifier.
Connect the resistor divider tap here. Set VOUT according
to VOUT = 1.24(1 + R1/R2). See Figure 1.
GATE (Pin 6): The Output of the MOSFET Driver.
DRV (Pin 7): The Pull-Up Supply of the MOSFET Driver. Tie
this pin to VIN (Pin 8) for nonbootstrapped operation or to
the converter output for bootstrapped operation.
VC (Pin 3): Compensation Pin for the Error Amplifier. VC is
the output of the transconductance amplifier. Overall loop
is compensated with an RC network from this pin to the
ground.
VIN (Pin 8): Supply or Battery Input. Must be closely
bypassed to the ground plane.
GND (Pin 4): Ground. Connect to local ground plane.
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BLOCK DIAGRA
VC
VIN
3
8
–
UVLO
A2
1.24V
+
1.8V
ERROR
AMPLIFIER
+
–
gm
FB 2
–
IDLE
A1
+
VB
VIN
DRV
7
–
+
C1
S
DRIVER
Q
6
GATE
R
RAMP COMP
300kHz
SYNC
OSCILLATOR
5
CLK
CURRENT
SENSE
AMP
+
S/S 1
Σ
+
–
+
+
SHUTDOWN
DELAY
REF/BIAS
CURRENT
LIMIT
COMPARATOR
–
4
LOAD
SENSE
GND
RSENSE
280ns
LEADING
EDGE
BLANKING
ILIM
1619 F02
Figure 2. LT1619 Block Diagram
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LT1619
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OPERATIO
The LT1619 is a fixed frequency current mode switching
regulator PWM controller that can be used in boost, SEPIC
or flyback modes. The device operates from an input
supply range of 1.9V to 18V, and has a separate supply pin
(DRV) for the gate driver. The DRV pin can be bootstrapped
to VOUT for additional gate enhancement in low voltage
applications like 3.3V to 5V boost converters, or connected to the input supply for higher voltage inputs.
To best understand operation of the LT1619, please refer
to Figure 2, the Block Diagram. The gate drive circuit turns
on the external MOSFET at the trailing edge of oscillator
output signal CLK. MOSFET current is sensed with an
external resistor (RSENSE of Figure 1). A leading edge
blanking circuit disables the current sense amplifier for
280ns immediately following switch turn-on, preventing
gate charging current from prematurely tripping the PWM
comparator. A slope compensating ramp, derived from
the oscillator, is added to the current sense output. The
driver turns off the MOSFET when this sum exceeds the
error amplifier output VC. The switch current is limited
with a separate comparator. The compensating ramp is a
progressive nonlinear function of the operating duty ratio
whereas the current limit does not vary with the duty ratio.
Error amplifier output VC determines the peak switch current required to regulate the output voltage. VC can be
considered a measure of output current. At heavy loads,
VC is in its upper range. Average and peak inductor currents are high. In this range, the inductor tends to run in
continuous conduction mode (CCM), where current is always flowing in the inductor. As load current decreases,
average and peak inductor current decreases. When the
average inductor current falls below 1/2 of the peak-to-peak
inductor current ripple, the converter enters discontinuous conduction mode (DCM), where current in the inductor reaches zero sometime during the discharge phase.
Further reduction in output current moves VC towards its
lower operating range, decreasing inductor current. Hysteretic comparator A1 determines if VC is too low for the
LT1619 to operate efficiently. As VC falls below the trip
voltage VB, A1’s output goes high, turning off all blocks
except the error amplifier, A1 and A2. The LT1619 enters
the idle state and switching stops. The device draws just
140µA from the input in the idle state. Output load current
discharges the output capacitor, causing the output voltage to decrease. As VOUT decreases, VC increases. As VC
increases above VB, switching action begins, delivering
power to the output. The switch current sense threshold is
about 10mV in this VC region. If the output load remains
light, the output voltage will rise and VC will fall, causing
the converter to idle again. This is known as Burst Mode
operation. The burst frequency depends on input voltage,
output voltage, inductance and output capacitance. Output voltage ripple during Burst Mode operation is usually
higher than when the converter is switching continuously.
Burst Mode operation increases light load efficiency because it delivers more energy per clock cycle than possible
with discontinuous mode operation and extremely low
peak switch current, allowing fewer switching cycles to
maintain a given output. IC supply current therefore becomes a small fraction of the total input current.
Setting Output Voltage
The output voltage of the LT1619 is set with resistive
divider R1 and R2 connected from the output to ground as
detailed in Figure 3. The divider tap is tied to the device FB
pin. Current through R2 should be significantly higher
than the FB pin bias current of 25nA. With R2 = 10k, the
input bias current of the error amplifier is 0.02% of the
current in R2.
VO
LT1619
FB
R1
R2
( )
( )
VO = 1.24V 1 + R1
R2
VO
–1
R1 = R2
1.24
1619 F03
Figure 3. Feedback Resistive Divider
Synchronization and Shutdown
The S/S pin (Pin 1) can be used to synchronize the
oscillator to an external source. The S/S pin is tied to the
input (VIN > 1.9V) for normal operation. The oscillator in
the LT1619 can be externally synchronized by driving the
S/S pin with a pulse train with an amplitude of at least 1V.
The maximum allowable rise time is a function of the
pulse amplitude, as shown in Table 1. Rise times equal to
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LT1619
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OPERATIO
or less than the number specified in Table 1 are acceptable. The maximum duty cycle is essentially unaffected by
synchronization.
The device will go into shutdown mode if the S/S pin
voltage stays below the shutdown threshold of 0.45V for
Table 1. Maximum Allowable Rise Time of Synchronization
Pulse. Rise Time Can Be Slower if Clock Amplitude is Higher
SYNCHRONIZATION
AMPLITUDE (V)
MAXIMUM ALLOWABLE
RISE TIME (ns)
1.2
120
1.5
220
2.0
350
2.5
470
3.0
530
more than 33µs. This shutdown delay is reset whenever
the S/S pin voltage rises above the shutdown threshold.
Applying a logic low signal at the S/S pin causes the gate
drive output to go low. Although all circuits in the LT1619
are disabled, the pull-down circuit in the MOSFET buffer is
still biased on. It is capable of shunting any leakage or
transient current at the GATE pin to ground, eliminating
the need for an external bleed resistor. The LT1619 consumes 15µA in shutdown.
The LT1619 is guaranteed to start with a minimum VIN of
1.85V. Comparator A2 senses the input voltage and generates an undervoltage lockout (UVLO) signal if VIN falls
below this minimum. While in undervoltage lockout, VC is
pulled low and the LT1619 stops switching. The supply
current drawn by the device falls to 140µA.
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APPLICATIO S I FOR ATIO
The value of the inductor is usually selected so that the
peak-to-peak ripple current is less than 30% of the maximum inductor current. The inductor should be able to
handle the maximum inductor current at full load without
saturation. Powder iron cores are not suitable for high
frequency switch mode power supply applications because of their high core losses. Ferrite cores have very low
core losses and are the material of choice for high frequency DC/DC converters.
Power MOSFET Driver
The LT1619 is capable of driving a low side N-channel
power MOSFET with up to 60nC of total gate charge (Qg).
An external driver is recommended for MOSFETs with
greater than 80nC of total gate charge. The peak gate drive
current varies from 0.5A with VDRV = 2.5V to 1.2A with
VDRV = 10V. The MOSFET driver is capable of charging the
gate of the power MOSFET to within 350mV of the upper
gate drive supply rail (DRV). It can also pull the gate of the
MOSFET to within 100mV of ground during turnoff. The
upper supply rail of the gate drive is brought out as a device
pin (DRV) for design flexibility. In a boost converter
design, the DRV pin can be tied to the converter output if
the minimum input voltage is insufficient to fully enhance
the power MOSFET. During start-up, the MOSFET is driven
with a gate voltage starting from VIN – VD (VD is the
forward voltage of the rectifying diode). As the output
voltage rises, the gate drive also increases until steady
state is reached. If the steady-state converter output
voltage exceeds the maximum allowable gate source
voltage and the input voltage is sufficient to enhance the
MOSFET, the DRV pin is tied to the input supply. For a
SEPIC converter, the DRV pin can be tied to the input or
diode OR’ed from the input and the output (Figure 4).
•
VOUT
+
Inductor
VIN
DRV
+
LT1619
GND
RS
•
1619 F03
Figure 4. SEPIC Converter with Diode OR’ed Gate Drive Supply
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LT1619
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APPLICATIO S I FOR ATIO
Power MOSFET
MOSFET power dissipation can be separated into frequency independent and frequency dependent components. The RDS(ON) loss in the switch is the product of the
mean square switch current and switch RDS(ON) and it
does not vary with the operating frequency.
The frequency-dependent switching losses consist of 1)
switch transition loss due to finite rise and fall times of the
drain source voltage and the drain current 2) gate switching loss, i.e., a packet of charge Qg (the total gate charge)
which is moved from the gate drive power supply to
ground in every switch cycle, and 3) the drain switching
loss, charge stored on the parasitic drain capacitance,
COSS is dumped to ground as the switch is turned on. The
transistor loss can be expressed as:
PLOSS = IDRMS2 RDS(ON) + transition loss + QgVGfS
+ 1/2COSSVDS(OFF)2fS
where the transition loss can be estimated with:
2
Transition Loss = ID
CRSSVDS(OFF) fS
IG(AVG)
Qg = The total gate charge
VG = Gate drive voltage ≈ VDRV
IG(AVG) = The average MOSFET buffer output current
fS = Operating frequency
CRSS = The average CGD between VDS = 0V
and VDS = VDS(OFF)
At low VDS(OFF) (≤12V) and operating frequencies below
500kHz, the ohmic losses often dominate. For high voltage
converters, the transition loss and COSS charge dumping
loss can dramatically impact the converter efficiency.
MOSFETs with lower parasitic capacitances but higher
RDS(ON) may actually provide better efficiency in these
situations.
Capacitors
In a switch mode DC/DC converter, output ripple voltage
is the product of the equivalent series resistance (ESR) of
the output capacitor and the peak-to-peak capacitor
current. Depending on topology, current feeding the output capacitor can be continuous or discontinuous. The input
current can also be continuous or discontinuous even if the
inductor current itself is continuous. In boost topology, the
inductor is in series with the input source so the input
current is continuous and the output current is discontinuous. In buck-boost or flyback converters, the inductor is
not in series with the input source nor the output, so neither the input current nor output current is continuous.
Whenever a terminal current is discontinuous, the capacitor at that terminal should be chosen to handle the ripple
current. Capacitor reliability will be adversely affected if
the ripple current exceeds the maximum allowable ratings. This maximum rating is specified as the RMS ripple
current. Several capacitors may be mounted in parallel to
meet the size and ripple current requirements.
Besides the ripple voltage requirements, the output capacitor also needs to be sized for acceptable output
voltage variation under load transients.
Current Sensing Resistor RSENSE
The LT1619 drives a low side N-channel MOSFET switch.
The switch current is sensed with an external resistor
RSENSE connected between the source of the MOSFET and
ground. The internal blanking circuit blocks the voltage
spike developed across RSENSE for 280ns at switch turnon. The switch is turned off when the instantaneous
voltage across RSENSE exceeds the current limit threshold,
VSENSE. Allowing variations in VSENSE yields:
RSENSE =
VSENSE(MIN)
IL(MAX)
The current limit threshold is constant and does not vary
with duty ratio.
Due to low signal level of the sense voltage, low inductance
sense resistors are required to reduce switching noise.
Low TC resistors maintain constant current limit over
temperature. Dale WSL and IRC series sense resistors
meet these criteria.
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LT1619
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APPLICATIO S I FOR ATIO
Diode
Schottky diodes are recommended for low output voltage
applications because of their low forward voltage. Since
Schottky diodes have negligible stored charge, charge
dumping loss is also reduced. The reverse breakdown
voltage of the diode should exceed the maximum reverse
voltage stress of the topology used. The diode should also
be able to carry the peak diode current with acceptable
foward voltage. For the boost converter in Figure 1, the
peak inductor current is approximately 5A. A Motorola
MBRD835 is used due to its low forward voltage.
Lowering Burst Mode Operation Current Limit
The LT1619 automatically enters Burst Mode operation as
VC voltage falls below VB. The corresponding switch
current is the Burst Mode operation switch current threshold, ID(BURST).
tolerance of ±25% and is temperature stable, develops an
offset voltage at the sense input. The value of ROS required
for non-Burst Mode operation can be obtained with the
expression:
IBIASROS ≥ VSENSE(BURST)
where
VSENSE(BURST) = (Burst Mode operation peak switch
current, ID(BURST)) • RSENSE
For example, if IBIAS = 120µA and VSENSE(BURST) = 10mV:
ROS ≥
10mV
= 83Ω
120µA
Allowing for 25% and 30% variations in IBAIS and
VSENSE(BURST) respectively:
ROS = (1.25)(1.3)(83Ω)
The effective Burst Mode operation current threshold can
be lowered by adding an offset to the input of the current
sense amplifier so that the switch current appears higher
to the PWM comparator. This has the effect of shifting the
VC operating range above VB. Although Burst Mode operation is not entirely disabled, the peak switch current before
entering Burst Mode operation is greatly reduced due to
the offset of the current sense amplifier. The peak switch
current is also determined by the current sense amplifier
blanking.
Choose ROS = 137Ω to completely disable Burst Mode
operation. Lower values of ROS (for example, 50Ω to
100Ω) can be used to lower the effective Burst Mode
current limit.
To lower the Burst Mode operation current sense threshold, a resistor ROS is added between the SENSE pin and
the sense resistor RSENSE (Figure 5). The input bias
current IBIAS of the current sense amplifier, which has a
In a current mode converter, the current sense circuit
senses the switch current and terminates the switch
conduction. In the LT1619, the current sense amplifier
has a full-scale input voltage range from the ground to the
current limit threshold (53mV). Due to high speed switching transients and parasitic trace inductances, the current
sense signal VSENSE tends to be noisy. If the VSENSE
switching transient is excessive, the current sense amplifier will amplify the spurious transient instead, resulting in
jittery operation. In situations where the internal leading
edge blanking is inadequate, a lowpass filter (Figure 6)
with corner frequency about 5 times the switching
frequency can be used to further attenuate high speed
switching transients. In Figure 6 the lowpass filter ROS and
CS has a corner frequency of:
CURRENT
SENSE
AMPLIFIER
ID
+
–
IBIAS = 120µA
IBIAS = 120µA
5
SENSE
4
GND
ROS
RSENSE
1619 F05
The value of the sense resistor is then adjusted to compensate for the reduced full-scale sense voltage.
IBIASROS + IL(MAX)RSENSE = 40mV
Filtering Current Sense Signal
Figure 5. Lowering Burst Mode Operation Current Limit
1619fa
9
LT1619
U
W
U U
APPLICATIO S I FOR ATIO
fCORNER =
1
≈ 5fS
2πROSCS
VIN
VZ
(The input impedance of the sense amplifier at the SENSE
pin is 2500Ω and ROS is typically less than 137Ω.) Typical
values for ROS and CS are 100Ω and 1nF. The 100Ω value
for ROS reduces Burst Mode threshold; use 10Ω and 10nF
when this is not desireable.
1
IS/S
R3
2
3
4
S/S
VIN
FB
DRV
8
7
LT1619
6
GATE
VC
5
SENSE
GND
(
IS/S
VS/S = 0
)
R3 < SHUTDOWN THRESHOLD
UVLO THRESHOLD = VZ + SHUTDOWN
THRESHOLD ≈ VZ + VBE
IS/S
≈ –2µA
VS/S = 0
1619 F07
Figure 7. Implementing Undervoltage Lockout
ID
LT1619
PWM
COMPARATOR
CURRENT
SENSE
AMPLIFIER
I
+
5
SENSE
ROS
+
CS RSENSE
–
4
GND
VSENSE
–
ZENER
DIODE
+
I
–
AVALANCHE
DIODE
V
1619 F06
V
Figure 6. Current Sense Filter for Improving Jitter Performance
Use of Shutdown Function to
Modify Undervoltage Lockout
The LT1619 is designed to operate from an input supply
with voltage as low as 1.85V. Shutdown is activated when
the S/S pin is pulled below 0.45V. The shutdown threshold
is slightly greater than one junction diode forward voltage
and has the temperature characteristics of a junction
diode. The S/S pin is normally tied to the input when
operating from a low voltage input source.
Consider the 12V to – 65V isolated flyback converter (see
Typical Applications). The converter draws 3A at low line
while delivering 0.4A to the output. If the S/S pin is tied to
the input, then the LT1619 will start switching as soon as
VIN exceeds the internal UVLO threshold. With full load,
the converter can draw much higher than the steady-state
3A from the input source during start-up. If the input
source is current limited, the input voltage will collapse
and latch low.
The start-up problem can be prevented by adding a zener
diode and a resistor to the S/S pin (Figure 7). This is
equivalent to increasing undervoltage lockout voltage of
the controller. Before VIN exceeds the zener voltage VZ, the
S/S pin current is shunted to the ground through the
0
BV < 5V
Figure 8. I-V Characteristics of Zener
and Avalanche Breakdown Diodes
VIN
R4
1
2
C1
R3
3
4
S/S
VIN
FB
DRV
LT1619
VC
GND
GATE
SENSE
8
7
6
5
1619 F09
Figure 9. Filtering Input Voltage Ripple in UVLO Circuit
resistor R3. The voltage developed across R3 due to IS/S
should be less than the shutdown threshold. The LT1619
remains off until VIN exceeds the sum of VZ and the
shutdown threshold. True zener diodes (BV < 5V) and
higher voltage avalanche diodes have different I-V characteristics (Figure 8). They need to be biased appropriately
(value of R3) in order to obtain correct UVLO threshold.
When implementing UVLO with converters with high input
ripple voltages (such as flyback and forward), the circuit
in Figure 7 is modified and shown in Figure 9.
1619fa
10
LT1619
U
W
U U
APPLICATIO S I FOR ATIO
Here the input voltage ripple is filtered with R3, R4 and C1
so as to prevent the input ripple from falsely tripping the
LT1619 synchronization circuit. It is recommended that:
and
1
R4 ≈ R3
5
1
(
Trickle Current Start from High Voltage Supplies
)
2π R3 || R4 C1
<< fOSC
Implementation of Hysteretic UVLO
with External Synchronization
The UVLO circuit shown in Figure 10 operates down to
0.9V supply voltage. Algebraically the UVLO trip points
are:

R5 
VINH = VZ + VBE  1 +

 R6 || R7 
and
(
) VZ + VBE 
(
)


 R5 || R6 || R7 + R9 
R5




R5
UVLO Hysteresis = VINH – VINL = 
 VZ +
 R5 + R7 + R9 

R5 || R7 + R9 
R5
VBE 
–

 R6 || R7

R6


VINL =
R5 || R7 + R9
R5 || R7 + R9
(
(
)
)
VIN
The low shutdown and idle mode quiescent supply currents of the LT1619 can be utilized to implement trickle
current start from high voltage input sources (such as a
36V to 72V telecom bus). The trickle current start-up
circuit in Figure 11 is modified from the UVLO circuit of
Figure 10. R10 is a high value resistor that charges the
storage capacitor C2 during start-up. Before VCC reaches
the upper UVLO trip point, Q2 holds the S/S pin low. The
LT1619 draws shutdown mode current (≈15µA) from VCC.
Q2 collector can also be tied to the VC pin through a diode
as in Figure 10. The LT1619 will then draw idle mode
quiescent current (≈140µA) from VCC. R10 should be able
to charge C2 while supplying current to the UVLO circuit
and the LT1619. Maximizing R5 to R9 values reduces
power dissipation in R10.
When VCC crosses the upper UVLO threshold, the LT1619
starts switching and its current consumption increases.
Before the bootstrap takes over, the LT1619 draws its
current from C2. VCC ramps towards the lower UVLO
threshold. Increasing the value of C2 allows more time for
the bootstrap circuit to establish itself before the converter
enters undervoltage lockout.
HV VIN
R8
30k
8.2V
The collector votage of Q2 is made about 1.4V at the VIN
lower trip voltage. This is necessary to prevent the UVLO
circuit from interfering with the feedback amplifier in the
LT1619.
+
–
R9
510k
R7
51k
CLK
1
2
D1
BAT85
3
Q2
2N2222
R5
51k
Q1
2N2222
R6
51k
S/S
VIN
FB
DRV
LT1619
VC
GATE
8
VCC
7
C2
R8
1
R9
GND
SENSE
S/S
VIN
FB
DRV
6
2
R7
4
BOOTSTRAP
WINDING
R10
5
1619 F10
VIN UPPER TRIP POINT = 10V
VIN LOWER TRIP POINT = 8.4V
Figure 10. Addition of Hysteresis UVLO While Synchronizing the
LT1619. Component Values Shown are for the Upper and the
Lower VIN Trip Points of 10V and 8.4V. In UVLO, the Gate Drive
is Disabled by Pulling the VC Pin Low. Disabling the Clock Shuts
Down the LT1619. If Not Synchronized, the Collector of Q2 Can
Be Tied to the S/S Pin and the Diode D1 Can Be Eliminated
3
R5
Q2
Q1
R6
4
LT1619
VC
GND
GATE
SENSE
8
D2
7
T1
6
5
1619 F11
Figure 11. Trickle Current Start-Up with Bootstrapped VCC
1619fa
11
LT1619
U
W
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APPLICATIO S I FOR ATIO
Increasing Ramp Compensation While Synchronizing
The LT1619 is synchronized by forced discharge of the
internal timing ramp. The timing ramp amplitude decreases as the synchronization frequency increases. Since
the internal compensation ramp is derived from the timing
ramp, reduced timing ramp results in diminished compensating ramp. If the LT1619 is synchronized at frequencies 20% to 30% higher than the free-running frequency,
external ramp compensation will be required. Figures 12
and 13 show two such schemes.
In both figures the compensating ramps are kept linear by
making R11-C1 and R14-C2 products substantially higher
than the synchronizing period. The compensation ramps,
1
CLK
2
3
4
S/S
8
VIN
7
DRV
FB
LT1619
6
GATE
VC
GND
R11
100k
D2
1N4148
Q1
2N2222
R12
2200Ω
5
SENSE
MAIN POWER
TRANSISTOR
C1
220pF
R13
51Ω
RSENSE
1619 F12
Figure 12. Increasing Ramp Compensation. Q1 Buffers the C1
Ramp. D2 Discharges C1. Values Shown are for 10V Gate Drive
and 15mV Ramp Across R13 at 90% Duty Cycle and 500kHz
CLK
1
2
3
4
S/S
VIN
FB
DRV
LT1619
VC
GND
GATE
SENSE
PC Board Layout and Other Practical Considerations
The following is recommended for PC board layout:
1. Trace lengths of the branches carrying switched current should be kept short. For example, in the boost
converter of Figure 1, the circuit loop formed by M1,
RSENSE, D1 and COUT carries switched current. The size
of this loop must be minimized. RSENSE and COUT
should be grounded to a single point on a large ground
plane. This reduces switching noise and overall converter jitter. It is also preferable to ground the input
capacitor C1 close to the common point between COUT
and RSENSE although this is less important.
2. Keep the trace between the sense resistor and the
SENSE pin short. When sensing high switch current,
Kelvin connection to RSENSE is necessary.
3. Bypass both the VIN and DRV pins with ceramic capacitors next to the IC and the ground plane.
4. Keep high voltage switching nodes, such as the drain
and gate of the MOSFET, away from the FB and VC pins.
8
5. Use inductor so that its ripple current is between 1/4
and 1/3 of its peak current. Steeper inductor current
ramp results in sharper PWM comparator switching,
hence less jitter.
R14
8200Ω
7
6
whose peak amplitudes are made between 1/4 to 1/3 of the
current limit threshold, are developed across R13. As a
result, the effective current limit threshold is reduced by
the sum of the compensating ramp and the offset voltage
developed across R13 due to the SENSE pin input bias
current (see Figure 5). Moreover, the current limit threshold becomes duty cycle dependent.
D2
1N4148
D3
1N4148
R15
2400Ω
5
C2
2.2nF
R13
51Ω
RSENSE
6. In most cases, filtering the current sense signal is not
necessary for jitter-free operation.
1619 F13
Figure 13. Externally Increasing Ramp Compensation. Similar
to Figure 12 Except That C2 is Not Buffered with Transistor
Figure 14 is the PC board layout for the 5V/8A and 12V/5A
boost converters shown in Figures 15a and 16a.
1619fa
12
LT1619
U
W
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APPLICATIO S I FOR ATIO
CDRV
CIN2
R1
RC
1
8
2
7
S
LT1619
R2
CZ
CP
3
6
4
5
G
M1
D
G
S
M1
D
RSENSE
CIN1
GND
COUT1, 2
VOUT
D1
L1
VIN
1619 F14
Figure 14. Recommended Component Placement for the Boost Converters in Figures 15a and 16a
1619fa
13
LT1619
U
W
U U
APPLICATIO S I FOR ATIO
VIN
3.3V
1
2
3
CP
150pF
RC
75k
4
S/S
VIN
FB
DRV
LT1619
VC
GND
GATE
SENSE
8
CIN2
1µF
CERAMIC
7
CDRV
0.1µF
CERAMIC
6
L1
1µH
+
CIN1
300µF
5
CZ
15nF
M1
D1
FDS6680A
×2
COUT1
RSENSE 220µF
×4
5V
8A
+
COUT2
10µF
CERAMIC
R1
37400Ω
R2
12400Ω
1619 F15a
CIN1: SANYO POSCAP 6TPB150M ×2
COUT1: SANYO POSCAP 10TPB220M ×4
D1: MOTOROLA MBRB1545CT
L1: SUMIDA CEPH149-1R0
RSENSE: PANASONIC 0.002Ω 1W
Figure 15a. 3.3V to 5V/8A Boost Converter
89
VIN = 3.3V
EFFICIENCY (%)
88
87
86
85
84
83
0.01
0.1
1
LOAD CURRENT (A)
10
1619 F15b
Figure 15b. Efficiency of the 5V/8A Boost Converter
1619fa
14
LT1619
U
W
U U
APPLICATIO S I FOR ATIO
VIN
5V
1
2
3
CP
47pF
RC
68.1k
4
S/S
VIN
FB
DRV
LT1619
VC
GND
GATE
SENSE
8
CIN2
1µF
CERAMIC
7
CDRV
0.1µF
CERAMIC
6
L1
1.8µH
+
CIN1
100µF
5
CZ
2200pF
M1
D1
FDS6690A
×2
COUT1
RSENSE 600µF
12V
5A
+
COUT2
10µF
CERAMIC
R1
107k
R2
12400Ω
1619 F15a
CIN1: SANYO OS-CON 10SA100M
COUT1: SANYO OS-CON 16SA150M ×4
D1: MOTOROLA MBRB1545CT
L1: SUMIDA CDEP149-1R8
RSENSE: PANASONIC 0.002Ω 1W
Figure 16a. 5V to 12V/5A Boost Converter
95
94
VIN = 5V
EFFICIENCY (%)
93
92
91
90
89
88
87
86
85
0.01
0.1
1
LOAD CURRENT (A)
10
1619 F16b
Figure 16b. Efficiency of the 12V/5A Boost Converter
1619fa
15
LT1619
U
TYPICAL APPLICATIO S
VIN
4.75V TO
5.25V
T1
–48V/0.5A
•
•
470µF
35V
SANYO MV-GX
+
•
+
MBRS340T3
470µF
35V
SANYO MV-GX
1µF
+
1500µF
6.3V
SANYO MV-GX
•
1N749
4.3V
•
4.7µF
FILM
15Ω
•
1
1.1k
2
3
2.2nF
36k
4
S/S
VIN
FB
DRV
LT1619
VC
GATE
GND
SENSE
8
4.7µF
FILM
MBRS340T3
7
6
10µF
SUD45N05-20L
50V, 0.018Ω
43nC
1M
30Ω
5
12k
220pF
2N5210
10.5k
1%
0.007Ω
22nF
2N5210
432k
1%
1619 F17a
T1: COILTRONICS CTX02-14261, EFD20-3F3, 6 WINDINGS EACH, 12µH
Figure 17a. 5V to – 48V Cuk Converter
90
VIN = 5.25V
89
88
EFFICIENCY (%)
87
86
VIN = 5V
85
VIN = 4.75V
84
83
82
81
80
79
10
100
LOAD CURRENT (mA)
1000
1619 F17b
Figure 17b. Efficiency of the 5V to – 48V Cuk
1619fa
16
LT1619
U
TYPICAL APPLICATIO S
10k
CNY17-3
6.2V
VIN
10.5V TO
13.7V
330pF
100V 43Ω
1/4W
T1
•
0.22µF
50V
8.1V
1k
1W
43Ω
W1
2.2µF
40V
470pF
•
•
MBRS1100T3
330pF W4
50V
1
–32.5V
82k
2
10k
150µF
20V
SANYO
20SV150M
(OS-CON)
3
100Ω
4
FB
DRV
LT1619
VC
GND
GATE
SENSE
1µF
50V
2.2µF
40V
•
470Ω
2.49k
121Ω
LT1431
1
8
COLL REF
2
7
NC
NC
3
6
V+ FGND
4
5
NC SGND
–65V
MBRS1100T3
8
7
6
10µF
T1
PHILIPS EFD20-3F3-A100-S
CORE SET (0.013" GAP, AI = 100nH/T2
IRLR024N
55V, 0.065Ω
QG = 15nC
W4 6T TRIFILAR 28AWG
W3 24T 28AWG
W2 24T 28AWG
W1 6T TRIFILAR 28AWG
5
1µF
0.008Ω
2mil
POLYESTER
FILM
1619 F18a
Figure 18a. Isolated Local SLIC Power Supply (Flyback) 20W Total Output Power (65V/0.3A or 32.5V/0.6A)
90
85
80
EFFICIENCY (%)
0.1µF
VIN
S/S
W2
220pF
62k
W3
MBRS1100T3
20k
100Ω
75
70
65
60
VIN = 13.7V
VIN = 12V
VIN = 10.5V
55
50
10
100
LOAD CURRENT (mA)
1000
1619 F18b
Figure 18b. Efficiency of the Isolated Local SLIC (Flyback)
1619fa
17
LT1619
U
PACKAGE DESCRIPTION
MS8 Package
8-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1660)
0.889 ± 0.127
(.035 ± .005)
5.23
(.206)
MIN
3.2 – 3.45
(.126 – .136)
0.42 ± 0.04
(.0165 ± .0015)
TYP
3.00 ± 0.102
(.118 ± .004)
(NOTE 3)
0.65
(.0256)
BSC
8
7 6 5
0.52
(.206)
REF
RECOMMENDED SOLDER PAD LAYOUT
0.254
(.010)
3.00 ± 0.102
(.118 ± .004)
NOTE 4
4.90 ± 0.15
(1.93 ± .006)
DETAIL “A”
0° – 6° TYP
GAUGE PLANE
0.53 ± 0.015
(.021 ± .006)
DETAIL “A”
1
2 3
4
1.10
(.043)
MAX
0.86
(.034)
REF
0.18
(.077)
SEATING
PLANE
0.22 – 0.38
(.009 – .015)
TYP
0.65
(.0256)
BSC
0.13 ± 0.076
(.005 ± .003)
MSOP (MS8) 0802
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
1619fa
18
LT1619
U
PACKAGE DESCRIPTION
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
.189 – .197
(4.801 – 5.004)
NOTE 3
.045 ±.005
.050 BSC
8
7
6
5
N
N
.245
MIN
.160 ±.005
1
.030 ±.005
TYP
.150 – .157
(3.810 – 3.988)
NOTE 3
.228 – .244
(5.791 – 6.197)
2
3
N/2
N/2
RECOMMENDED SOLDER PAD LAYOUT
.010 – .020
× 45°
(0.254 – 0.508)
.008 – .010
(0.203 – 0.254)
2
3
4
.053 – .069
(1.346 – 1.752)
.004 – .010
(0.101 – 0.254)
0°– 8° TYP
.016 – .050
(0.406 – 1.270)
NOTE:
1. DIMENSIONS IN
1
.014 – .019
(0.355 – 0.483)
TYP
INCHES
(MILLIMETERS)
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
.050
(1.270)
BSC
SO8 0502
1619fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LT1619
U
TYPICAL APPLICATIO
VIN
4V TO 28V
T1
7
C4
1.5µF
100V
R3
5.6k
9
10 •
• 12
2
1
5•
•4
8
3
6•
• 11
C5
1.5µF
100V
VOUT
5V
0.5A
D3
MBRS0530T1
Q1
FMMT3904
D4
1N4687
4.3V
LOW LEVEL
(IZT = 50µA)
D2
MBRS340T3
8
7
Q3
MMFT3055VL
6
VIN DRV GATE
5
R7
30Ω
SENSE
LT1619
2
FB
S/S GND
1
4
C8
1µF
16V
R5
100Ω
R6
3.74k
1%
C1
0.022µF
C6
10µF
10V
VC
3
R9
2.2k
C9
2.2nF
C7
220pF
R8
0.015Ω
R10
1.24k
1%
C4, C5: VITRAMON VJ1825Y155MXB (1825/X7R)
C6: TAIYO YUDEN LMK325BJ106MN (1210/X7R)
C8: TAIYO YUDEN EMK316BJ105ML (1206/X7R)
T1: COILTRONICS VP1-0190 (ER11/5, 6 WINDINGS EACH 12.2µH)
1619 TA01
Figure 19. 2.5W, 4VIN-28VIN to 5V/0.5A Nonisolated Supply
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1370
500kHz, 6A Switching Regulator
Boost, Buck, Flyback, Forward, Inverting; 42V Switch Voltage
LT1372
500kHz, 1.5A Switching Regulator
SO-8, 2.7V ≤ VIN ≤ 30V, 42V Switch Voltage
LT1613
1.4MHz, SOT-23 DC/DC Converter
Fixed Frequency, 0.9V ≤ VIN ≤ 10V, 36V Switch Voltage
LTC1624
Switching Regulator Controller
SO-8, Drives N-Ch MOSFET, 3.5V ≤ VIN ≤ 36V
LT1680
Synchronous Boost Controller
Synchronous Operation for High Current/High Efficiency
LT1698
Isolated or Nonisolated 10W to 100W
Power Supply Solution with Multiple Outputs
50% Lower Cost than Quarter Brick and Half Brick Modules
Fits the Foot Print
LTC1871
No RSENSE Boost, Flyback, SEPIC Controller
2.5V ≤ VIN ≤ 36V, Current Mode Control, 50kHz to 1MHz
Adjustabe Frequency, MSOP-10
LTC1872
SOT-23 Boost Controller
550kHz Fixed Frequency, Current Mode
LT1946
1.2MHz, 65A DC/DC Converter
MSOP-8, 5V to 12V/400mA
LT3710/LT3781
Isolated or Nonisolated 10W to 100W
Power Supply Solution with Multiple Outputs
50% Lower Cost than Quarter Brick and Half Brick Modules
Fits the Foot Print
1619fa
20
Linear Technology Corporation
LT/TP 1002 1K REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2000