CMT2N7002

CMT2N7002
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
‹
High Density Cell Design for Low RDS(ON)
produced using high cell density, DMOS technology. These
‹
Voltage Controlled Small Signal Switch
products have been designed to minimize on-state resistance
‹
Rugged and Reliable
while provide rugged, reliable, and fast switching performance.
‹
High Saturation Current Capability
It can be used in most applications requiring up to 115mA DC
and can deliver pulsed currents up to 800mA. This product is
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications.
PIN CONFIGURATION
SYMBOL
SOT-23, SOT-323
SOT-363
Top View
Top View
D2
G1
D
S1
1
G
SOURCE
DRAIN
GATE
3
S2
2
G2
S
D1
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT2N7002
SOT-23
CMT2N7002G*
SOT-23
CMT2N7002WG*
SOT-323
CMT2N7002DWG*
SOT-363
CMT2N7002X*
SOT-23
CMT2N7002WX*
SOT-323
CMT2N7002DWX*
SOT-363
*Note: G : Suffix for Pb Free Product
W: Suffix for Package SOT-323
X : Suffix for Halogen Free Product
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS = 1.0MΩ)
VDGR
60
V
mA
Drain to Current - Continuous
ID
115
IDM
800
VGS
±20
VGSM
±40
V
PD
225
mW
1.8
mW/℃
EAS
9.6
mJ
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
℃
Thermal Resistance - Junction to Ambient
θJA
417
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
300
℃
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
V
(VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω)
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
Page 1
CMT2N7002
SMALL SIGNAL MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2N7002
Characteristic
Symbol
Min
Drain-Source Breakdown Voltage
V(BR)DSS
(VGS = 0 V, ID = 10 μA)
Typ
Max
60
Units
V
Drain-Source Leakage Current
(VDS = 60 V, VGS = 0 V)
IDSS
(VDS = 60 V, VGS = 0 V, TJ = 125℃)
1.0
μA
0.5
mA
Gate-Source Leakage Current-Forward (Vgsf = 20 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse (Vgsf = -20 V)
IGSSF
-100
nA
2.5
V
Gate Threshold Voltage *
(VDS = VGS, ID = 250 μA)
On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V)
VGS(th)
1.0
Id(on)
500
mA
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
7.5
(VGS = 10 V, ID = 0.5A, TJ = 125℃)
13.5
RDS(on)
(VGS = 5.0 V, ID = 50mA)
7.5
(VGS = 5.0 V, ID = 50mA, TJ = 125℃)
13.5
Ω
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
VDS(on)
3.75
(VGS = 5.0 V, ID = 50mA)
V
0.375
Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) *
gFS
Input Capacitance
Ciss
50
pF
Coss
25
pF
Crss
5.0
pF
Output Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Reverse Transfer Capacitance
80
mmhos
Turn-On Delay Time
(VDD = 25 V, ID = 500 mA,
td(on)
20
ns
Turn-Off Delay Time
Vgen = 10 V, RG = 25Ω, RL = 50Ω) *
td(off)
40
ns
VSD
-1.5
V
Source Current Continuous (Body Diode)
IS
-115
mA
Source Current Pulsed
ISM
-800
mA
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
Page 2
CMT2N7002
SMALL SIGNAL MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
Page 3
CMT2N7002
SMALL SIGNAL MOSFET
PACKAGE DIMENSION
SOT-23
SOT-323
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
Page 4
CMT2N7002
SMALL SIGNAL MOSFET
SOT-363
2010/03/23 Rev. 1.9
Champion Microelectronic Corporation
Page 5
CMT2N7002
SMALL SIGNAL MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan, R.O.C.
2010/03/23 Rev. 1.9
T E L : +886-2-2696 3558
F A X : +886-2-2696 3559
Champion Microelectronic Corporation
Page 6
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