Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 ■ Features 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible. • High IFSM (IFSM = 30 A) • Small reverse current IR. 2 ■ Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward Symbol Rating Unit VR 25 V VRRM 25 V IF(AV) 1.0 A IFSM 30 A 0 to 0.3 Reverse voltage 0.16+0.1 –0.06 5˚ 0 to 0.1 Parameter 0.45±0.1 0.55±0.1 surge current *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +125 °C 1: Anode 2: Cathode Mini2-F1 Package Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) Marking Symbol: 3W ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 1.5 20 µA Reverse current IR1 VR = 15 V IR2 VR = 20 V 2.5 40 Forward voltage VF1 IF = 0.5 A 0.41 0.46 VF2 IF = 1.0 A 0.44 0.53 Ct VR = 10 V, f = 1 MHz Terminal capacitance 45 V pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 A Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω SKH00127AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA22D23 104 3 10 Ta = 150°C 103 102 125°C 10 75°C 1 25°C 10−1 −20°C 10−3 Ta = 150°C 125°C 102 75°C 10 25°C 1 10−1 −20°C 10−2 10−2 10−3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward voltage VF (V) 2 I R VR 104 Reverse current IR (µA) Forward current IF (mA) IF V F 105 0 5 10 15 20 25 Reverse voltage VR (V) SKH00127AED 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP