Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9±0.1 1.0 1.0 R 0.85 4.5±0.1 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 4.1±0.2 1.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.45±0.05 (Ta=25˚C) 3 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V * Forward current transfer ratio hFE VCB = 10V, IE = –1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz Reverse transfer impedance Zrb VCB = 10V, IE = –1mA *h FE 250 230 1.3 MHz 1.6 pF 60 Ω Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 1 Transistor 2SC2647 PC — Ta IC — VCE 120 Ta=25˚C 200 100 8 60µA 6 40µA 4 20µA 2 60 80 100 120 140 160 Ambient temperature Ta (˚C) 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 40 25˚C 30 –25˚C 20 10 0 0.4 0.8 1.2 12 1.6 2.0 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0.3 –30 Emitter current IE (mA) –100 70 60 50 40 VCB=6V 10V 20 10 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 30 1 Collector current IC (mA) Zrb — IE 500 1.8 VCE=10V 100 80 Ta=25˚C 1.2 600 IC/IB=10 fT — IE 0 – 0.1 – 0.3 0.6 Base to emitter voltage VBE (V) Collector current IC (mA) 600 300 0 hFE — IC 100 Base to emitter voltage VBE (V) Transition frequency fT (MHz) 18 VCE(sat) — IC 60 0 40 Collector to emitter voltage VCE (V) IC — VBE Ta=75˚C 60 0 0 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 80 20 0 0 Collector current IC (mA) 100 80µA Base current IB (µA) 300 VCE=10V Ta=25˚C IB=100µA 10 400 0 2 IB — VBE 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC2647 Cob — VCB bie — gie 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.2 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 1.4 100 10 6 25 4 10.7 IE=– 0.4mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 100 58 –1mA –4mA 25 58 100 –40 100 58 f=10.7MHz 25 –60 58 IE=–7mA –80 –100 1.0 0.8 58 25 40 60 –4mA –2.0 –2.5 –3.0 – 0.5 100 IE=–7mA –0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 80 Forward transfer conductance 100 gfe (mS) –7mA –4mA –2mA –1mA IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA – 0.4mA 0.6 yfe=gfe+jbfe VCE=10V –120 0 –1.5 100 10.7 –2mA 100 20 – 0.4mA –1mA 1.2 0.45 Output susceptance boe (mS) – 0.1mA –20 25 16 58 –1.0 boe — goe 0.45 10.7 – 0.4mA 12 Input conductance gie (mS) bfe — gfe 0 8 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3