Transmissive Photosensors (Photo lnterrupters) CNA1011K (ON1113) Photo lnterrupter For contactless SW, object detection 6.2 ■ Overview 7.0±0.3 7.0±0.2 ■ Features Symbol Rating Reverse voltage VR 3 V emitting diode) Forward current IF 50 mA Power dissipation *1 PD 75 mW VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 0.45±0.15 6.2 0.4 19.2 13.0±0.15 8.8 min. 2-φ3.2±0.2 (2.54) 4- 0.45 (10.1) SEC. A-A' 2-2.0 1: Anode 2: Cathode 3: Collector 4: Emitter 1 4 PISTR104-012 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Unit Output (Photo Collector-emitter voltage transistor) (Base open) Temperature A' 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 5.0±0.2 A 8.5 • Highly precise position detection: 0.3 mm • Wide gap between emitting and detecting elements, suitable for thick plate detection • Fast response: tr , tf = 6 µs (typ.) • Small output current variation against change in temperature Device center 2.2±0.2 13.6 2.2±0.3 CNA1011K is a small size photocoupler package consisting of a high efficiency GaAs infrared light emitting diode used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. Input (Light Unit: mm Mark for indicating LED side φ1.5 3 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.34 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 50 mA characteristics Reverse current IR VR = 3 V Ct VR = 0 V, f = 1 MHz Input Terminal capacitance Output Collector-emitter cutoff current characteristics (Base open) Transfer ICEO Min CC VCE = 10 V, f = 1 MHz IC VCC = 10 V, IF = 20 mA, RL = 100 Ω Rise time Fall time * 1.5 V 10 µA 200 nA 35 Collector current * Max 1.2 VCE = 10 V Collector-emitter capacitance characteristics Collector-emitter saturation voltage VCE(sat) Typ Unit pF 5 pF 0.3 mA IF = 50 mA, IC = 0.1 mA 0.5 V tr VCC = 10 V, IC = 1 mA 6 µs tf RL = 100 Ω 6 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50 Ω RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00018BED 1 CNA1011K IF , I C T a IF V F Ta = 25°C 50 30 IC 20 10 Collector current IC (mA) 40 40 30 20 40 60 80 0 100 0 0.4 0.8 1.2 1.6 1 mA 0.8 0.4 40 Collector current IC (mA) IF = 50 mA 0 2.0 ∆IC Ta IF = 30 mA 1 20 mA 10 mA 10 −1 1 80 40 0 40 ∆IC d 100 VCC = 10 V Ta = 25°C 1 10 −2 Rise time tr (µs) 102 10 V RL = 1 kΩ 500 Ω 10 100 Ω 1 10 −3 80 Ambient temperature Ta (°C ) 10 −1 10 −2 10 −1 80 Ambient temperature Ta (°C ) tr I C 103 40 120 0 −40 102 10 VCE = 10 V IF = 20 mA Collector-emitter voltage VCE (V) ICEO Ta 102 10 160 Ta = 25°C 10 −2 10 −1 80 10 0 1 Forward current IF (mA) 10 Ambient temperature Ta (°C ) VCE = 24 V 10 −3 10 −1 2.4 IC VCE 10 mA 10 −4 −40 10 −2 Forward voltage VF (V) 102 1.2 10 −1 10 −1 Relative collector current ∆IC (%) 20 Relative collector current ∆IC (%) 0 VF T a 0 −40 1 10 1.6 Forward voltage VF (V) VCE = 10 V Ta = 25°C 50 Ambient temperature Ta (°C ) Collector-emitter cutoff current (Base open) ICEO (µA) 10 IF 0 −25 2 IC I F 60 Forward current IF (mA) Forward current IF , collector current IC (mA) 60 1 Collector current IC (mA) SHG00018BED 10 VCE = 5 V Ta = 25°C IF = 20 mA 80 Criterion 0 d 60 40 20 0 0 1 2 3 4 Distance d (mm) 5 6 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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