Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping. 0.8 0.2 ● (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 +0.1 * 0.45–0.05 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 120 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 *1 VCE = 10V, IC = 150mA*2 90 330 hFE2 VCE = 5V, IC = 500mA*2 50 hFE3 VCE = 5V, IC = 100mA*2 100 VCE(sat) IC = 300mA, IB = 30mA*2 Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz*2 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11.5 Forward current transfer ratio Collector to emitter saturation voltage 0.15 1 0.9 1.2 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1 2SD2225 Transistor IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C Collector current IC (mA) 0.2 160 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 0 1 3 10 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 400 500 400 300 Ta=75˚C 25˚C 200 –25˚C 100 VCB=10V Ta=25˚C 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 80 70 12 30 IC/IB=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 10 600 IC/IB=10 0.01 0.01 0.03 8 IC/IB=10 hFE — IC 100 1 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 4 Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 200 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 10 0 –1 –3 –10 –30 Emitter current IE (mA) –100