Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1.5 A Peak collector current ICP −3 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 1 3.05±0.1 3.8±0.3 1.9±0.1 • Output of 4 W can be obtained by a complementary pair with 2SC1847 • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = −1 mA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −40 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA Forward current transfer ratio * hFE VCE = −5 V, IC = −1 A 220 80 Max Unit Collector-emitter saturation voltage VCE(sat) IC = −1.5 A, IB = − 0.15 A −1.0 V Base-emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.2 A −1.5 V Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz VCB = −20 V, IE = 0, f = 1 MHz 45 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 80 to 160 120 to 220 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00003BED 1 2SA0886 IC VCE TC=25˚C IB=–40mA –3.5 –35mA 1.2 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC –4.0 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.6 0.8 0.4 –3.0 –30mA –25mA –2.5 –20mA –2.0 –15mA –1.5 –10mA –1.0 –5mA –0.5 0 0 40 80 120 0 160 0 –2 –4 –6 –8 –10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC IC/IB=10 –10 –1 TC=100˚C –0.1 25˚C –0.01 –0.01 –25˚C –0.1 –1 Collector current IC (A) fT I E 1000 100˚C 25˚C –0.1 –0.01 –0.01 –0.1 TC=100˚C 100 10 Cob VCB 40 0 0.01 0.1 100 80 60 40 20 –100 Collector-base voltage VCB (V) 1 10 Emitter current IE (A) ICEO Ta 1000 VCE=–12V TC=25˚C –50 –40 ICEO (Ta) ICEO (Ta = 25°C) 120 –10 80 VCER RBE IE=0 f=1MHz TC=25˚C 140 120 –1 –60 Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob –0.1 160 Collector current IC (A) Collector current IC (A) 2 25˚C –25˚C 1 –0.01 –1 200 Transition frequency fT (MHz) TC=–25˚C –1 0 –1 VCB=–5V f=200MHz TC=25˚C VCE=–5V IC/IB=10 –10 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 240 –30 –20 100 10 –10 0 0.001 1 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00003BED 0 20 40 60 80 100 Ambient temperature Ta (°C) 120 2SA0886 Rth t Safe operation area −10 Single pulse TC=25˚C −1 IC t=10ms t=1s − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 104 Thermal resistance Rth (°C/W) Collector current IC (A) ICP 103 (1) 102 (2) 10 1 10−1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) Collector-emitter voltage VCE (V) SJD00003BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.