8644xx

GS864418/36E-250/225/200/166/150/133
165-Bump BGA
Commercial Temp
Industrial Temp
4M x 18, 2M x 36
72Mb S/DCD Sync Burst SRAMs
Features
250 MHz–133MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode . Holding the FT mode pin low places the RAM in
Flow Through mode, causing output data to bypass the Data Output
Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 165-bump BGA package available
SCD and DCD Pipelined Reads
Functional Description
The GS864418/36E is a SCD (Single Cycle Deselect) and DCD (Dual
Cycle Deselect) pipelined synchronous SRAM. DCD SRAMs
pipeline disable commands to the same degree as read commands.
SCD SRAMs pipeline deselect commands one stage less than read
commands. SCD RAMs begin turning off their outputs immediately
after the deselect command has been captured in the input registers.
DCD RAMs hold the deselect command for one full cycle and then
begin turning off their outputs just after the second rising edge of
clock. The user may configure this SRAM for either mode of
operation using the SCD mode input.
Applications
Byte Write and Global Write
The GS864418/36E is a 75,497,472-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although of a
type originally developed for Level 2 Cache applications supporting
high performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main store to
networking chip set support.
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low) for
multi-drop bus applications and normal drive strength (ZQ floating or
high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Controls
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
The GS864418/36E operates on a 2.5 V or 3.3 V power supply. All
input are 3.3 V and 2.5 V compatible. Separate output power (VDDQ)
pins are used to decouple output noise from the internal circuits and
are 3.3 V and 2.5 V compatible.
Parameter Synopsis
-250
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.07 2/2011
-225 -200 -166 -150 -133 Unit
tKQ(x18/x36)
tCycle
2.5
4.0
2.7
4.4
3.0
5.0
3.5
6.0
3.8
6.7
4.0
7.5
ns
ns
Curr (x18)
Curr (x36)
385
450
360
415
335
385
305
345
295
325
265
295
mA
mA
tKQ
tCycle
6.5
6.5
6.5
6.5
6.5
6.5
7.0
7.0
7.5
7.5
8.5
8.5
ns
ns
Curr (x18)
Curr (x36)
265
290
265
290
265
290
255
280
240
265
225
245
mA
mA
1/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
165-Bump BGA—x18 Commom I/O—Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
E1
BB
NC
E3
BW
ADSC
ADV
A
A
A
B
NC
A
E2
NC
BA
CK
GW
G
ADSP
A
NC
B
C
NC
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
DQPA
C
D
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
D
E
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
E
F
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
F
G
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
G
H
FT
MCL
NC
VDD
VSS
VSS
VSS
VDD
NC
ZQ
ZZ
H
J
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
J
K
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
K
L
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
L
M
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
M
N
DQPB
SCD
VDDQ
VSS
NC
A
NC
VSS
VDDQ
NC
NC
N
P
NC
A
A
A
TDI
A1
TDO
A
A
A
A
P
R
LBO
A
A
A
TMS
A0
TCK
A
A
A
A
R
11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch
Rev: 1.07 2/2011
2/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
165-Bump BGA—x36 Common I/O—Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
E1
BC
BB
E3
BW
ADSC
ADV
A
NC
A
B
NC
A
E2
BD
BA
CK
GW
G
ADSP
A
NC
B
C
DQPC
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
DQPB
C
D
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
D
E
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
E
F
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
F
G
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
G
H
FT
MCL
NC
VDD
VSS
VSS
VSS
VDD
NC
ZQ
ZZ
H
J
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
J
K
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
K
L
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
L
M
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
M
N
DQPD
SCD
VDDQ
VSS
NC
A
NC
VSS
VDDQ
NC
DQPA
N
P
NC
A
A
A
TDI
A1
TDO
A
A
A
A
P
R
LBO
A
A
A
TMS
A0
TCK
A
A
A
A
R
11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch
Rev: 1.07 2/2011
3/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
GS864418/36E 165-Bump BGA Pin Description
Symbol
Type
Description
A 0, A 1
I
Address field LSBs and Address Counter Preset Inputs
A
I
Address Inputs
DQA
DQB
DQC
DQD
I/O
Data Input and Output pins
BA , BB , BC , BD
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low (x36 Version)
CK
I
Clock Input Signal; active high
BW
I
Byte Write—Writes all enabled bytes; active low
GW
I
Global Write Enable—Writes all bytes; active low
E1
I
Chip Enable; active low
E3
I
Chip Enable; active low
E2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active l0w
ADSC, ADSP
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
MCL
—
Must Connect Low
SCD
—
Single Cycle Deselect/Dual Cyle Deselect Mode Control
VDD
I
Core power supply
VSS
I
I/O and Core Ground
VDDQ
I
Output driver power supply
NC
—
No Connect
Rev: 1.07 2/2011
4/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
GS864418/36E Block Diagram
Register
A0–An
D
Q
A0
A0
D0
A1
Q0
A1
D1
Q1
Counter
Load
A
LBO
ADV
Memory
Array
CK
ADSC
ADSP
Q
D
Register
GW
BW
BA
D
Q
36
36
Register
D
Q
BB
4
Register
D
Q
D
Q
D
Q
Register
Register
D
Q
Register
BC
BD
Register
D
36
Q
36
Register
E1
D
Q
36
Register
D
Q
FT
G
ZZ
36
Power Down
SCD
DQx1–DQx9
Control
Note: Only x36 version shown for simplicity.
Rev: 1.07 2/2011
5/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Mode Pin Functions
Mode Name
Pin Name
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
Single/Dual Cycle Deselect Control
SCD
FLXDrive Output Impedance Control
ZQ
State
Function
L
Linear Burst
H
Interleaved Burst
L
Flow Through
H or NC
Pipeline
L or NC
Active
H
Standby, IDD = ISB
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Note:
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
1st address
00
01
10
11
2nd address
01
10
11
00
2nd address
01
00
11
10
3rd address
10
11
00
01
3rd address
10
11
00
01
4th address
11
00
01
10
4th address
11
10
01
00
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Rev: 1.07 2/2011
6/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Byte Write Truth Table
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
H
X
X
X
X
1
Write No Bytes
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs, BA, BB, BC and/or BD.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Rev: 1.07 2/2011
7/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
E1
E2
E3
ADSP
ADSC
ADV
W
DQ3
Deselect Cycle, Power Down
None
X
L
X
H
X
L
X
X
High-Z
Deselect Cycle, Power Down
None
X
L
L
X
X
L
X
X
High-Z
Deselect Cycle, Power Down
None
X
L
X
H
L
X
X
X
High-Z
Deselect Cycle, Power Down
None
X
L
L
X
L
X
X
X
High-Z
Deselect Cycle, Power Down
None
X
H
X
X
X
L
X
X
High-Z
Read Cycle, Begin Burst
External
R
L
H
L
L
X
X
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
X
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
X
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
X
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
X
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
X
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
X
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
X
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
X
X
H
H
T
D
Notes:
1. X = Don’t Care, H = High, L = Low
2. E = T (True) if E2 = 1 and E1 = E3 = 0; E = F (False) if E2 = 0 or E1 = 1 or E3 = 1
3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Rev: 1.07 2/2011
8/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Simplified State Diagram
X
Deselect
W
R
Simple Burst Synchronous Operation
Simple Synchronous Operation
W
X
R
R
First Write
First Read
CR
CW
W
X
CR
R
R
X
Burst Write
Burst Read
X
CR
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.07 2/2011
9/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Simplified State Diagram with G
X
Deselect
W
R
W
X
R
R
First Write
CR
CW
W
CW
W
X
First Read
X
CR
R
Burst Write
R
CR
CW
W
Burst Read
X
CW
CR
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
Rev: 1.07 2/2011
10/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to 4.6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.3
2.5
2.7
V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input High Voltage
VIH
2.0
—
VDD + 0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
VDD3 Range Logic Levels
Note:
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Rev: 1.07 2/2011
11/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
VDD2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
Input Low Voltage
VIL
–0.3
—
0.3*VDD
V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
Ambient Temperature (Industrial Range Versions)*
TA
–40
25
85
°C
Note:
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Thermal Impedance
Package
Test PCB
Substrate
θ JA (C°/W)
Airflow = 0 m/s
θ JA (C°/W)
Airflow = 1 m/s
θ JA (C°/W)
Airflow = 2 m/s
θ JB (C°/W)
θ JC (C°/W)
165 BGA
4-layer
18.1
14.5
13.8
7.3
2.3
Notes:
1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number.
2. Please refer to JEDEC standard JESD51-6.
3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD + 2.0 V
VSS
50%
50%
VDD
VSS – 2.0 V
20% tKC
VIL
Note:
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.07 2/2011
12/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Output Load 1
DQ
50Ω
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Rev: 1.07 2/2011
13/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IIN1
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA
1 uA
100 uA
FT, SCD, ZQ Input Current
IIN2
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
–100 uA
–1 uA
1 uA
1 uA
Output Leakage Current
IOL
Output Disable, VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH2
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
—
Output High Voltage
VOH3
IOH = –8 mA, VDDQ = 3.135 V
2.4 V
—
Output Low Voltage
VOL
IOL = 8 mA
—
0.4 V
Rev: 1.07 2/2011
14/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
Rev: 1.07 2/2011
IDD
170
200
IDD
Pipeline
Flow
Through
120
ISB
Flow
Through
120
ISB
Pipeline
IDD
250
15
360
25
IDD
IDDQ
Pipeline
IDDQ
270
20
IDD
IDDQ
Flow
Through
Flow
Through
400
50
0
to
70°C
IDD
IDDQ
Symbol
Pipeline
Mode
200
230
160
160
275
15
395
25
295
20
435
50
–40
to
85°C
-250
170
190
120
120
250
15
335
25
270
20
370
45
200
220
160
160
275
15
370
25
295
20
405
45
–40
to
85°C
-225
0
to
70°C
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
—
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Deselect
Current
(x18)
—
Operating
Current
(x36)
ZZ ≥ VDD – 0.2 V
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
Standby
Current
Test Conditions
Parameter
Operating Currents
160
180
120
120
250
15
315
20
270
20
345
40
0
to
70°C
190
210
160
160
275
15
350
20
295
20
380
40
–40
to
85°C
-200
160
170
120
120
240
15
285
20
260
20
310
35
0
to
70°C
190
200
160
160
260
15
320
20
285
20
345
35
–40
to
85°C
-166
150
170
120
120
225
15
275
20
245
20
295
30
0
to
70°C
180
200
160
160
250
15
310
20
270
20
330
30
–40
to
85°C
-150
140
160
120
120
210
15
250
15
230
15
270
25
0
to
70°C
170
190
160
160
235
15
285
15
255
15
305
25
–40
to
85°C
-133
mA
mA
mA
mA
mA
mA
mA
mA
Unit
GS864418/36E-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/33
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
AC Electrical Characteristics
Pipeline
Flow
Through
Parameter
Symbol
Clock Cycle Time
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tKC
4.0
—
4.4
—
5.0
—
6.0
—
6.7
—
7.5
—
ns
Clock to Output Valid
tKQ
—
2.5
—
2.7
—
3.0
—
3.5
—
3.8
—
4.0
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
1
Clock to Output in Low-Z
tLZ
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.3
—
1.3
—
1.4
—
1.5
—
1.5
—
1.5
—
ns
Hold Time
tH
0.2
—
0.3
—
0.4
—
0.5
—
0.5
—
0.5
—
ns
Clock Cycle Time
tKC
6.5
—
6.5
—
6.5
—
7.0
—
7.5
—
8.5
—
ns
Clock to Output Valid
tKQ
—
6.5
—
6.5
—
6.5
—
7.0
—
7.5
—
8.5
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ1
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Setup time
tS
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.3
—
1.3
—
1.3
—
1.3
—
1.5
—
1.7
—
ns
Clock LOW Time
tKL
1.5
—
1.5
—
1.5
—
1.5
—
1.7
—
2
—
ns
Clock to Output in
High-Z
tHZ1
1.5
2.5
1.5
2.7
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
2.7
—
3.2
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
2.5
—
2.7
—
3.0
—
3.0
—
3.0
—
3.0
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
20
—
20
—
ns
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Rev: 1.07 2/2011
16/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Pipeline Mode Timing (SCD)
Begin
Read A
Cont
Cont
Single Read
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Single Write
tKL
tKH
tKC
Deselect
Burst Read
CK
ADSP
tS
tH
ADSC initiated read
ADSC
tS
tH
ADV
tS
tH
A0–An
A
B
C
tS
GW
tS
tH
BW
tH
tS
Ba–Bd
tS
Deselected with E1
tH
E1 masks ADSP
E1
tS
tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS
tH
E3
G
tS
tOE
DQa–DQd
Rev: 1.07 2/2011
tOHZ
Q(A)
tKQ
tH
D(B)
tKQX
tLZ
tHZ
Q(C)
17/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q(C+1)
Q(C+2)
Q(C+3)
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Flow Through Mode Timing (SCD)
Begin
Read A
Cont
Cont
Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Cont
Deselect
tKL
tKH
tKC
CK
ADSP
Fixed High
tS
tH
tS
tH
ADSC
initiated read
ADSC
tS
tH
ADV
tS
tH
A0–An
A
B
C
tS
tH
GW
tS
tH
BW
tS
tH
Ba–Bd
tS
Deselected with E1
tH
E1
tS
tH
E2 and E3 only sampled with ADSC
E2
tS
tH
E3
G
tH
tS
tOE
DQa–DQd
Rev: 1.07 2/2011
tOHZ
Q(A)
D(B)
tKQ
tLZ
tHZ
tKQX
Q(C)
Q(C+1)
Q(C+2)
18/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q(C+3)
Q(C)
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Pipeline Mode Timing (DCD)
Begin
Read A
Cont
Deselect Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect Deselect
tKL
tKH
tKC
CK
ADSP
tS
ADSC initiated read
tH
ADSC
tS
tH
ADV
tS
tH
Ao–An
A
B
C
tS
GW
tS
tH
BW
tH
tS
Ba–Bd
tS
Deselected with E1
tH
E1
tS
E2 and E3 only sampled with ADSC
tH
E2
tS
tH
E3
G
tS
tOE
DQa–DQd
Hi-Z
Rev: 1.07 2/2011
tOHZ
Q(A)
tKQ
tH
D(B)
tHZ
tLZ
tKQX
Q(C)
Q(C+1)
19/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q(C+2)
Q(C+3)
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Flow Through Mode Timing (DCD)
Begin
Read A
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Deselect
tKL
tKH
tKC
CK
ADSP
Fixed High
tS
tH
tS
tH
ADSC
initiated read
ADSC
tH
tS
tS
tH
ADV
tS
tH
Ao–An
A
B
C
tS
tH
GW
tS
tH
BW
tH
tS
Ba–Bd
tS
Deselected with E1
tH
E1 masks ADSP
E1
tS
tH
E2 and E3 only sampled with ADSP and ADSC
E2
tS
tH
E1 masks ADSP
E3
G
tH
tS
tOE
tKQ
DQa–DQd
Rev: 1.07 2/2011
tOHZ
Q(A)
tKQX
tHZ
tLZ
D(B)
Q(C)
Q(C+1)
Q(C+2)
20/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Q(C+3)
Q(C)
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing Diagram
tKH
tKC
tKL
CK
Setup
Hold
ADSP
ADSC
tZZR
tZZS
tZZH
ZZ
Application Tips
Single and Dual Cycle Deselect
SCD devices (like this one) force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with VDD. The JTAG output
drivers are powered by VDDQ.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either VDD or VSS. TDO should be left unconnected.
Rev: 1.07 2/2011
21/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
JTAG Pin Descriptions
Pin
Pin Name
I/O
Description
TCK
Test Clock
In
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.
TMS
Test Mode Select
In
The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
controller state machine. An undriven TMS input will produce the same result as a logic one input
level.
In
The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.
TDI
Test Data In
TDO
Test Data Out
Output that is active depending on the state of the TAP state machine. Output changes in
Out response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.
Note:
This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
JTAG Port Registers
Overview
The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.
Instruction Register
The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.
Bypass Register
The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.
Boundary Scan Register
The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
Rev: 1.07 2/2011
22/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
JTAG TAP Block Diagram
·
·
·
·
·
·
·
·
Boundary Scan Register
·
·
1
·
M*
0
0
Bypass Register
2 1 0
Instruction Register
TDI
TDO
ID Code Register
31 30 29
·
· ··
2 1 0
Control Signals
TMS
Test Access Port (TAP) Controller
TCK
* For the value of M, see the BSDL file, which is available at by contacting us at [email protected]
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
GSI Technology
JEDEC Vendor
ID Code
Not Used
Bit #
Presence Register
ID Register Contents
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
X
1
X
Rev: 1.07 2/2011
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
23/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
0 0 1 1 0 1 1 0 0 1
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
JTAG Tap Controller State Diagram
1
0
Test Logic Reset
0
Run Test Idle
1
Select DR
1
Select IR
0
0
1
1
Capture DR
Capture IR
0
0
Shift DR
1
1
Shift IR
0
1
1
Exit1 DR
0
Exit1 IR
0
0
Pause DR
1
Exit2 DR
1
Update DR
1
1
0
0
Pause IR
1
Exit2 IR
0
1
0
0
Update IR
1
0
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
Rev: 1.07 2/2011
24/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
still determined by its input pins.
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruction is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not associated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (highZ) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
RFU
These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
Rev: 1.07 2/2011
25/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
JTAG TAP Instruction Set Summary
Instruction
Code
Description
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Rev: 1.07 2/2011
26/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes
1
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
JTAG Port Recommended Operating Conditions and DC Characteristics (2.5/3.3 V Version)
Parameter
Symbol
Min.
Max.
Unit Notes
2.5 V Test Port Input High Voltage
VIHJ2
0.6 * VDD2
VDD2 +0.3
V
1
2.5 V Test Port Input High Voltage
VIHJ2
0.6 * VDD2
VDD2 +0.3
V
1
3.3 V Test Port Input High Voltage
VIHJ3
2.0
VDD3 +0.3
V
1
3.3 V Test Port Input Low Voltage
VILJ3
–0.3
0.8
V
1
TMS, TCK and TDI Input Leakage Current
IINHJ
–300
1
uA
2
TMS, TCK and TDI Input Leakage Current
IINLJ
–1
100
uA
3
TDO Output Leakage Current
IOLJ
–1
1
uA
4
Test Port Output High Voltage
VOHJ
1.7
—
V
5, 6
Test Port Output Low Voltage
VOLJ
—
0.4
V
5, 7
Test Port Output CMOS High
VOHJC
VDDQ – 100 mV
—
V
5, 8
Test Port Output CMOS Low
VOLJC
—
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be –2 V < Vi < VDDn +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
2. VILJ ≤ VIN ≤ VDDn
3. 0 V ≤ VIN ≤ VILJn
4. Output Disable, VOUT = 0 to VDDn
5. The TDO output driver is served by the VDDQ supply.
6. IOHJ = –4 mA
7. IOLJ = + 4 mA
8. IOHJC = –100 uA
9. IOLJC = +100 uA
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
DQ
50Ω
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Notes:
1. Include scope and jig capacitance.
2. Test conditions as shown unless otherwise noted.
Rev: 1.07 2/2011
JTAG Port AC Test Load
27/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
JTAG Port Timing Diagram
tTKC
tTKH
tTKL
TCK
tTH
tTS
TDI
tTH
tTS
TMS
tTKQ
TDO
tTH
tTS
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
—
ns
TCK Low to TDO Valid
tTKQ
—
20
ns
TCK High Pulse Width
tTKH
20
—
ns
TCK Low Pulse Width
tTKL
20
—
ns
TDI & TMS Set Up Time
tTS
10
—
ns
TDI & TMS Hold Time
tTH
10
—
ns
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: [email protected]
Rev: 1.07 2/2011
28/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Package Dimensions—165-Bump FPBGA (Package E (MCM))
A1
TOP
BOTTOM
Ø0.10M C
Ø0.25M C A B
Ø0.40~0.60
1 2 3 4 5 6 7 8 9 10
A1
11 10 9 8 7 6 5 4 3 2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1.0
14.
17±0.0
1.0
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
1.0
1.0
10.
0.20 C
B
15±0.0
0.20(4
Rev: 1.07 2/2011
0.36~0.4
1.50
SEATING
C
29/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Package Dimensions—165-Bump FPBGA (Package GE (MCM))
A1
TOP
BOTTOM
Ø0.10M C
Ø0.25M C A B
Ø0.40~0.60
1 2 3 4 5 6 7 8 9 10
A1
11 10 9 8 7 6 5 4 3 2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1.0
14.
17±0.0
1.0
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
A
1.0
1.0
10.
0.15 C
B
15±0.0
0.20(4
Rev: 1.07 2/2011
0.36~0.4
1.50
SEATING
C
30/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz/ns)
TA3
4M x 18
GS864418E-250
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
250/6.5
C
4M x 18
GS864418E-225
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
225/6.5
C
4M x 18
GS864418E-200
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
200/6.5
C
4M x 18
GS864418E-166
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
166/8
C
4M x 18
GS864418E-150
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
150/8.5
C
4M x 18
GS864418E-133
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
133/8.5
C
2M x 36
GS864436E-250
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
250/6.5
C
2M x 36
GS864436E-225
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
225/6.5
C
2M x 36
GS864436E-200
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
200/6.5
C
2M x 36
GS864436E-166
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
166/8
C
2M x 36
GS864436E-150
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
150/8.5
C
2M x 36
GS864436E-133
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
133/8.5
C
4M x 18
GS864418E-250I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
250/6.5
I
4M x 18
GS864418E-225I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
225/6.5
I
4M x 18
GS864418E-200I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
200/6.5
I
4M x 18
GS864418E-166I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
166/8
I
4M x 18
GS864418E-150I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
150/8.5
I
4M x 18
GS864418E-133I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
133/8.5
I
2M x 36
GS864436E-250I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
250/6.5
I
2M x 36
GS864436E-225I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
225/6.5
I
2M x 36
GS864436E-200I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
200/6.5
I
2M x 36
GS864436E-166I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
166/8
I
2M x 36
GS864436E-150I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
150/8.5
I
2M x 36
GS864436E-133I
Synchronous Burst MCM
3.3 V or 2.5 V
165 BGA
133/8.5
I
4M x 18
GS864418GE-250
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
C
4M x 18
GS864418GE-225
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
C
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418E-150IB.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. C = Commercial Temperature Range. I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.07 2/2011
31/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number1
Type
Voltage
Option
Package
Speed2
(MHz/ns)
TA3
4M x 18
GS864418GE-200
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
4M x 18
GS864418GE-166
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
166/8
C
4M x 18
GS864418GE-150
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
C
4M x 18
GS864418GE-133
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
C
2M x 36
GS864436GE-250
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
C
2M x 36
GS864436GE-225
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
C
2M x 36
GS864436GE-200
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
2M x 36
GS864436GE-166
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
166/8
C
2M x 36
GS864436GE-150
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
C
2M x 36
GS864436GE-133
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
C
4M x 18
GS864418GE-250I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
I
4M x 18
GS864418GE-225I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
I
4M x 18
GS864418GE-200I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
4M x 18
GS864418GE-166I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
166/8
I
4M x 18
GS864418GE-150I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
I
4M x 18
GS864418GE-133I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
I
2M x 36
GS864436GE-250I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
250/6.5
I
2M x 36
GS864436GE-225I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
225/6.5
I
2M x 36
GS864436GE-200I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
I
2M x 36
GS864436GE-166I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
166/8
I
2M x 36
GS864436GE-150I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
150/8.5
I
2M x 36
GS864436GE-133I
Synchronous Burst MCM
3.3 V or 2.5 V
RoHS-compliant 165 BGA
133/8.5
I
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418E-150IB.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. C = Commercial Temperature Range. I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Rev: 1.07 2/2011
32/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
GS864418/36E-250/225/200/166/150/133
72Mb Sync SRAM Data Sheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
• Creation of new datasheet
8644xx_r1
Content
• Updated Operating Currents table
• Updated FT AC Characteristics for tKQ
8644xx_r1_01;
8644xx_r1_02
Content
• Updated FT tKQ and PL tS/tH and FT current numbers for 250
and 225 MHz (match 200 MHz)
• Updated basic format
• Added thermal characteristics to mechanical drawings
• Updated JTAG section for module
8644xx_r1_02;
8644xx_r1_03
Format/Content
8644xx_r1_03;
8644xx_r1_04
Content
• Corrected 165 mechanical drawing
• Added RoHS-compliance information for 165 BGA
8644xx_r1_04;
8644xx_r1_05
Content
• Updated Truth Tables (pg. 15, 16)
• Rev1.05a: updated coplanarity for 119/165/209 BGA
mechanical
8644xx_r1_05;
8644xx_r1_06
Content
• Removed Preliminary banner
• Updated Synchronous Truth Table (pg. 16)
8644xx_r1_06;
8644xx_r1_07
Content
8644xx_r1; 8644xx_r1_01
Rev: 1.07 2/2011
• Updated format
• Added variation information to package mechanicals
• Removed NRND 119 BGA and 209 BGA
33/33
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology
Similar pages