Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 0.15 R0.9 0.85 ± 0.15 2.8±0.2 Small size designed for easier mounting to printed circuit board Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 0.4±0.1 2.8±0.2 1.8 1.05±0.1 Fast response : tr = 2.5 µs (typ.) 1.8 2.2±0.15 (0.7) 2 45 ˚ Good collector photo current linearity with respect to optical power input (0.7) 1 Unit 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle *1 *2 ICE(L)*3 Conditions VCE = 10V, L = 1000 lx*1 λP VCE = 10V θ Measured from the optical axis to the half power point Rise time tr*2 Fall time tf*2 min VCE = 10V typ max 1 100 nA 19.2 mA 0.8 VCC = 10V, ICE(L) = 1mA, RL = 100Ω Unit 800 nm 14 deg. 2.5 µs 3.5 µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class Q R S T ICE(L) (mA) 0.8 to 2.4 1.6 to 4.8 3.2 to 9.6 6.4 to 19.2 1 Phototransistors PNZ1270 PC — Ta ICE(L) — VCE 40 30 20 10 0 – 20 0 20 40 Ambient temperature 60 80 L =1000 lx 4 3 500 lx 2 250 lx 1 100 lx 0 100 Ta = 25˚C T = 2856K Ta (˚C ) 0 4 8 1 Ambient temperature 10 2 10 10 24 80 S (%) 10 3 0 40 80 Ambient temperature VCE = 10V Ta = 25˚C 80 60 40 0 200 120 10 2 600 800 1000 1200 tf — ICE(L) 10 2 VCE = 10V Ta = 25˚C 100 400 Wavelength λ (nm) Ta (˚C ) tr — ICE(L) 20˚ 10 4 20 Ta (˚C ) 10˚ 10 3 L (lx) Spectral sensitivity characteristics 100 10 4 10 2 – 40 120 10 2 Illuminance VCE = 10V T = 2856K Directivity characteristics 0˚ 10 3 VCE (V) Relative sensitivity ICE(L) (mA) Collector photo current ICEO (nA) Dark current 10 40 20 VCE = 10V Ta = 25˚C T = 2856K 10 4 ICE(L) — Ta 10 2 0 16 10 5 VCE = 10V 10 –1 – 40 12 Collector to emitter voltage ICEO — Ta 10 3 ICE(L) (µA) 50 ICE(L) — L 10 5 Collector photo current ICE(L) (mA) 5 Collector photo current Collector power dissipation PC (mW) 60 VCE = 10V Ta = 25˚C 40 30 20 50˚ 60˚ 70˚ 500Ω 1 100Ω 10 –1 RL = 1kΩ tf (µs) 40˚ 10 RL = 1kΩ Fall time 50 10 tr (µs) 60 30˚ Rise time 70 Relative sensitivity S (%) 90 80 500Ω 100Ω 1 10 –1 80˚ 90˚ 10 –2 10 –2 10 –1 Collector photo current 2 1 10 ICE(L) (mA) 10 –2 10 –2 10 –1 Collector photo current 1 10 ICE(L) (mA)