Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current ICP −4 A Collector power dissipation PC 35 W −80 Ta = 25°C Note) Self-supported type package is also prepared. Internal Connection 1.3 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Symbol Collector-emitter voltage (Base open) Conditions VCEO IC = −30 mA, IB = 0 VBE VCE = −4 V,IC = −2 A Collector-base cutoff current (Emitter open) 2SB0937 Collector-emitter cutoff current (Base open) 2SB0937 Min ICBO 2SB0937A ICEO 2SB0937A Max Unit V −1 VCE = −30 V,IB = 0 −2 VCE = −40 V,IB = 0 −2 VEB = −5 V,IC = 0 hFE1 VCE = −4 V, IC = −1 A 1 000 VCE = −4 V, IC = −2 A 2 000 hFE2 mA −1 IEBO VCE(sat) V VCB = −60 V,IE = 0 Forward current transfer ratio * −2.8 VCB = −80 V,IE = 0 Emitter-base cutoff current (Collector open) Collector-emitter saturation voltage Typ −60 −80 2SB0937A Base-emitter voltage 14.4±0.5 1: Base 2: Collector 3: Emitter N-G1 Package V VCEO 2SB0937 3.0+0.4 –0.2 (6.5) Collector-emitter voltage 2SB0937 (Base open) 2SB0937A Parameter 4.4±0.5 1.5+0 –0.4 2 (7.6) Parameter 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (1.5) ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 1.0±0.1 4.4±0.5 • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 6.0±0.2 2.0±0.5 ■ Features 3.4±0.3 10.0±0.3 1.5±0.1 For power amplification and switching Complementary to 2SD1260, 2SD1260A 8.5±0.2 −2 mA mA 10 000 IC = −2 A, IB = −8 mA −2.5 V Transition frequency fT VCE = −10 V, IC = −0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = −2 A, 0.4 µs Strage time tstg IB1 = −8 mA, IB2 = 8 mA 1.5 µs Fall time tf VCC = −50 V 0.5 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Publication date: March 2003 Note) The part number in the parenthesis shows conventional part number. SJD00018BED 1 2SB0937, 2SB0937A PC Ta IC VCE (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) (1) IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –0.8mA −4 30 20 10 −3 –0.6mA −2 4.0mA −1 –0.2mA 25˚C TC=100˚C −4 –25˚C −2 40 80 120 160 −1 0 Forward current transfer ratio hFE TC=100˚C –25˚C 25˚C − 0.1 − 0.1 −1 TC=100˚C 25˚C –25˚C 103 102 10 − 0.01 −10 − 0.1 −1 −10 Thermal resistance Rth (°C/W) t=1ms t=10ms t=300ms 2SB0937A 2SB0937 − 0.1 −10 −100 IE=0 f=1MHz TC=25˚C 103 102 10 1 − 0.1 −1 −10 −100 Rth t ICP −1 000 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00018BED −3.2 Collector-base voltage VCB (V) 103 −10 − 0.01 −1 −2.4 104 Collector current IC (A) Non repetitive pulse TC=25˚C IC −1.6 Cob VCB Safe operation area −1 − 0.8 0 Base-emitter voltage VBE (V) VCE=–4V 104 Collector current IC (A) −100 0 −5 hFE IC −10 − 0.01 − 0.01 −4 105 IC/IB=250 −1 −3 Collector-emitter voltage VCE (V) VCE(sat) IC −100 −2 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) −6 –0.1mA (3) Collector current IC (A) −8 (2) 0 2 VCE=–4V Collector current IC (A) 40 −10 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) IC VBE −5 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL