Fast Recovery Diodes (FRD) MA2D601 Silicon planar type Unit : mm For high-frequency rectification For Snubber circuit of power supplies For secondary side rectification for a power supply 4.6 ± 0.2 15.0 ± 0.5 +0 1.5 − 0.4 φ 3.2 ± 0.1 ■ Features 2.6 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • High reverse voltage VR > 600 V • Short reverse recovery time trr < 50nsec • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV 2.9 ± 0.2 3.0 ± 0.5 9.9 ± 0.3 1.4 ± 0.2 0.8 ± 0.1 0.55 ± 0.15 5.08 ± 0.5 2.54 ± 0.3 ■ Absolute Maximum Ratings Ta = 25°C 1 Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak reverse surge voltage VRSM 600 V Average forward current IF(AV) 5.0 A Non-repetitive peak forward surge current* IFSM 50 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Repetitive peak reverse current Forward voltage (DC) Reverse recovery time* Thermal resistance Max Unit IRRM1 VRRM = 600 V, TC = 25°C Conditions Min Typ 100 µA IRRM2 VRRM = 600 V, Tj = 150°C 500 µA VF IF = 5.0 A, TC = 25°C 1.5 V trr IF = 1 A, IR = 1 A 50 ns Rth(j-c) 3.0 °C/W Rth(j-a) 63 °C/W Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg × cm 3. * : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA2D601 Fast Recovery Diodes (FRD) IF V F IR V R 100 100 Ta = 150°C 10 10 Reverse current IR (µA) Forward current IF (A) Ta = 150°C 1 0.1 25°C 0.01 0 0.5 1 1.5 2 Forward voltage VF (V) 2 0.1 25°C 0.01 0.001 0.000 1 1 2.5 0.001 0 100 200 300 400 500 Reverse voltage VR (V) 600