Schottky Barrier Diodes (SBD) MA3S795E Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 ■ Features 3 0.60 − 0.03 + 0.05 0.12 − 0.02 + 0.05 0.28 ± 0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Symbol 1 + 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting • Optimum for low voltage rectification because of its low VF (VF = 0.3 V or less at IF = 1 mA) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) Parameter 1.60 ± 0.1 0.80 ± 0.05 0.80 0.28 ± 0.05 For switching circuits Rating 0.44 Unit 0.44 + 0.05 1 : Anode 1 2 : Anode 2 3 : Carhode 1 Cathode 2 SS-Mini Type Package (3-pin) 0.88 − 0.03 Reverse voltage (DC) VR 30 V For switching circuits VRM 30 V IFM 150 mA Peak forward current Single Forward current (DC) Single Double* 110 30 IF Double* Marking Symbol: M3D mA Internal Connection 20 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 3 Note) * : Value per chip 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 30 µA Forward voltage (DC) VF1 IF = 1 mA 0.3 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1 Reverse recovery time* trr Detection efficiency η V 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse Output Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3S795E Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 1.0 104 0.8 103 Ta = 125°C − 20°C 10 1 10–1 IF = 30 mA 0.6 10 mA 0.4 Reverse current IR (µA) Forward current IF (mA) Ta = 125°C Forward voltage VF (V) 75°C 25°C 102 75°C 102 25°C 10 1 0.2 1 mA 10−2 0 0.4 0.8 1.2 1.6 2.0 0 −40 2.4 Forward voltage VF (V) 10−1 0 40 80 120 Ct VR IR T a 103 Reverse current IR (µA) Terminal capacitance Ct (pF) VR = 25 V 2.5 2.0 1.5 1.0 3V 1V 102 10 1 0.5 0 5 10 15 20 25 Reverse voltage VR (V) 30 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 104 f = 1 MHz Ta = 25°C 2 200 Ambient temperature Ta (°C) 3.0 0 160 200 30