Discretes for USB Type-C Wearable

Discretes for USB Type-C Wearable
WEARABLE DEVICE REQUIREMENTS
FEATURES & BENEFITS
} Bidirectional ESD protection
} ESD: TrEOS Protection
- Low capacitance (0.1 pF)  best signal integrity on
 Low leakage
 Low switching losses
high-speed lines
- Low clamping with low Rdyn  best system protection level
} Small form factor
- High ESD robustness (20 kV)  strong protection for frequent user interaction
 Small DFN and DSN packages
} Frequent user interaction / special connectors
} DSN Schottky diodes
- Low VF and low IR  strong performance for energy efficiency
 High ESD robustness
- Leadless DSN package  high performance in smallest package
} DFN MOSFETs
- Low RDson  high energy efficiency
- Leadless DFN package  small package for slim devices
PRODUCT OPPORTUNITY TABLE
Function
Specification
Package
DSN0603-2
DFN1006-2
Types
PESD5V0R1BSF
ESD protection
0.1 pF, 10 kV, 0.45 Ω Rdyn, bidirectional
DSN0603-2
0.6 x 0.3 x 0.3 mm
1.0 x 0.6 x 0.27 mm
PESD5V0H1BSF
ESD protection
0.15 pF, 15 kV, 0.25 Ω Rdyn, bidirectional
DSN0603-2
PESD5V0C1USF
ESD protection
0.4 pF, 20 kV, 0.2 Ω Rdyn, unidirectional
DSN0603-2
PMEG2002AESF
Schottky diode
20 V, 0.2 A, VF = 0.37 V, IR = 5 µA
DSN0603-2
PMEG3010AESB
Schottky diode
30 V, 1.0 A, VF=0.42 V, IR = 0.3 µA
DSN1006-2
MOSFET
20 V, 290 mΩ, single N-channel
DFN1006B-3
PMZB290UN
DFN1006B-3
1.0 x 0.6 x 0.37 mm
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