Discretes for USB Type-C Wearable WEARABLE DEVICE REQUIREMENTS FEATURES & BENEFITS } Bidirectional ESD protection } ESD: TrEOS Protection - Low capacitance (0.1 pF) best signal integrity on Low leakage Low switching losses high-speed lines - Low clamping with low Rdyn best system protection level } Small form factor - High ESD robustness (20 kV) strong protection for frequent user interaction Small DFN and DSN packages } Frequent user interaction / special connectors } DSN Schottky diodes - Low VF and low IR strong performance for energy efficiency High ESD robustness - Leadless DSN package high performance in smallest package } DFN MOSFETs - Low RDson high energy efficiency - Leadless DFN package small package for slim devices PRODUCT OPPORTUNITY TABLE Function Specification Package DSN0603-2 DFN1006-2 Types PESD5V0R1BSF ESD protection 0.1 pF, 10 kV, 0.45 Ω Rdyn, bidirectional DSN0603-2 0.6 x 0.3 x 0.3 mm 1.0 x 0.6 x 0.27 mm PESD5V0H1BSF ESD protection 0.15 pF, 15 kV, 0.25 Ω Rdyn, bidirectional DSN0603-2 PESD5V0C1USF ESD protection 0.4 pF, 20 kV, 0.2 Ω Rdyn, unidirectional DSN0603-2 PMEG2002AESF Schottky diode 20 V, 0.2 A, VF = 0.37 V, IR = 5 µA DSN0603-2 PMEG3010AESB Schottky diode 30 V, 1.0 A, VF=0.42 V, IR = 0.3 µA DSN1006-2 MOSFET 20 V, 290 mΩ, single N-channel DFN1006B-3 PMZB290UN DFN1006B-3 1.0 x 0.6 x 0.37 mm www.nxp.com © 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.