VO610A Datasheet

VO610A
www.vishay.com
Vishay Semiconductors
Optocoupler, Low Input Current, Phototransistor Output
FEATURES
A
1
4
E
C
2
3
C
• Temperature range - 55 °C to + 110 °C
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
• Thickness through insulation  0.4 mm
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
17918_10
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage  300 V
• for appl. class I - IV at mains voltage  600 V according to
table 1 of IEC 60664-1, suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface






DESCRIPTION
The VO610A consists of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic dual inline package.
AGENCY APPROVALS
(All parts are certified under base model VO610A)
• BSI: EN 60065:2002, EN 60950:2000
• DIN EN 60747-5-5, available with option 1
• FIMKO EN 60065, EN 60335-1, EN 60950-1
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• CQC GB4943.1-2011, GB8898-2011
ORDERING INFORMATION
DIP-#
V
O
6
1
0
A
-
#
X
0
#
#
T
7.62 mm
PART NUMBER
CTR
BIN
PACKAGE OPTION
TAPE
AND
REEL
Option 6
10.16 mm
AGENCY CERTIFIED/PACKAGE
BSI, FIMKO, UL, cUL
DIP-4
SMD-4, option 7
SMD-4, option 8
SMD-4, option 9
VDE, BSI, FIMKO, UL, cUL
DIP-4
DIP-4, 400 mil, option 6
SMD-4, option 7
SMD-4, option 8
SMD-4, option 9
Option 7
> 0.6 mm
Option 8
Option 9
9.27 mm
> 8 mm
CTR (%)
40 to 80
VO610A-1
40 to 80
VO610A-1X019T
63 to 125
VO610A-2
63 to 125
-
100 to 200
VO610A-3
VO610A-3X007T
VO610A-3X008T
VO610A-3X009T
100 to 200
VO610A-3X001
VO610A-3X016
VO610A-3X018T
VO610A-3X019T
160 to 320
VO610A-4X008T
160 to 320
VO610A-4X017T
VO610A-4X019T
Note
• Additional options may be possible, please contact sales office
Rev. 1.7, 18-Feb-13
Document Number: 81775
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp  10 μs
IFSM
1.5
A
LED power dissipation
at 25 °C
Pdiss
100
mW
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
50
mA
tp/T = 0.5, tp  10 ms
ICM
100
mA
at 25 °C
Pdiss
150
mW
OUTPUT
Collector current
Collector peak current
Output power dissipation
COUPLER
Isolation test voltage (RMS)
VISO
5000
VRMS
Operating ambient temperature range
Tamb
- 55 to + 110
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
Soldering temperature (1)
t = 1 min
2 mm from case,  10 s
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted parts (SMD), and wave profile for soldering conditions for through hole
parts (DIP), please go to “Assembly Instructions” (www.vishay.com/doc?80054).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 50 mA
VF
Reverse current
VR = 6 V
IR
VR = 0, f = 1 MHz
Cj
IC = 1 mA
VCEO
70
7
TYP.
MAX.
UNIT
INPUT
Junction capacitance
1.25
1.6
V
100
μA
50
pF
OUTPUT
Collector emitter voltage
Emitter collector voltage
V
IE = 100 μA
VECO
VCE = 20 V, IF = 0 A
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 
fc
110
kHz
f = 1 MHz
Ck
0.6
pF
Collector emitter cut-off current
V
10
100
nA
0.3
V
COUPLER
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.7, 18-Feb-13
Document Number: 81775
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 1 mA
IC/IF
VCE = 5 V, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
VO610A-1
CTR
13
30
MAX.
UNIT
%
VO610A-2
CTR
22
45
%
VO610A-3
CTR
34
70
%
VO610A-4
CTR
56
90
VO610A-1
CTR
40
80
%
VO610A-2
CTR
63
125
%
VO610A-3
CTR
100
200
%
VO610A-4
CTR
160
320
%
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Vpd
1.3
kV
Insulation resistance
TYP.
UNIT
VIO = 500 V
RIO
1012

VIO = 500 V, Tamb = 100 °C
RIO
1011

VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109

Recurring peak voltage
VIORM
Rated impulse voltage
VIOTM
Max. working voltages
MAX.
Forward current
6
kV
850
Vpeak
ISI
130
mA
Power dissipation
PSO
265
mW
Safety temperature
Tsi
150
°C
Creepage distance
7.6
mm
Note
• According to DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the
safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
VIOTM
300
t1, t2
t3 , t4
ttest
tstres
Phototransistor
Pso (mW)
250
200
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
150
VIOWM
VIORM
100
IR-diode
Isi (mA)
50
0
0
0
94 9182-2
25
50
75
100
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
Rev. 1.7, 18-Feb-13
125
150
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE0884), IEC 60747
Document Number: 81775
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
MIN.
TYP.
MAX.
UNIT
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
tr
3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
tf
4.7
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
ton
6
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 ,
(see figure 3)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 k,
(see figure 4)
ton
9
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 k,
(see figure 4)
toff
10
μs
IF
IF
0
+5V
IF
0
I C = 2 mA; adjusted through
input amplitude
tp
IC
t
100 %
90 %
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
10 %
0
Channel I
Channel II
50 Ω
100 Ω
td
Fig. 3 - Test Circuit, Non-Saturated Operation
ts
t on
tp
td
tr
t on (= td + tr)
95 10804
IF
tr
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 4 - Test Circuit, Saturated Operation
Rev. 1.7, 18-Feb-13
Document Number: 81775
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6.5 ± 0.3
Pin 1 identifier
7.62 to 9.5
4.58 ± 0.3
7.62 typ.
0.4 ± 0.1
3.5 ± 0.3 4.5 ± 0.3
2.8 ± 0.5
0° to 15°
1.3 ± 0.1
0.25 typ.
0.5 ± 0.1
2.54 typ.
i178027-11
Option 6
Option 7
Option 8
Option 9
7.62 typ.
7.62 typ.
7.62 typ.
10.3 max.
7.62 typ.
3.5 ± 0.3
0.6 min.
0.25 ± 0.1
4.3 ± 0.3
3.5 ± 0.3
0.1 ± 0.1
3.6 ± 0.3
0.1 min.
8 min.
2.7 min.
9.27 min.
0.6 min.
10.3 max.
0.6 min.
12.1 max.
8 min.
0.76
R 0.25
2.54
0.76
2.54
0.76
2.54
10.16 typ.
R 0.25
R 0.25
9.95 min.
1.52
13.0
1.52
7.7
11.05
1.78
8 min.
11.05
1.78
1.52
1.78
20802-38
PACKAGE MARKING (Example of VO617A-3X018T)
VO610A-3
V YWW
24
Note
• Only options 1, 7, and 8 are reflected in the package marking.
• The VDE logo is only printed on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Rev. 1.7, 18-Feb-13
Document Number: 81775
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
PACKING INFORMATION
DEVICE PER TUBE
TYPE
UNITS/TUBE
TUBES/BOX
UNITS/BOX
100
40
4000
DIP-4, standard and option 6
Top cover tape
Embossed carrier
Embossment
17998
Fig. 6 - Tape and Reel Shipping Medium
10 pitch cumulative
tolerance on tape
± 0.2
2 ± 0.1
1.55 + 0.1
4 ± 0.1
0.35 ± 0.1
1.75 ± 0.1
7.5 ± 0.1
16 ± 0.3
4.65 ± 0.1
5° max.
X
5° max.
12 ± 0.1
4.55 ± 0.1
X
1.5 ± 0.1
10.3 ± 0.1
Section X-X
Fig. 7 - Tape and Reel Packing for Option 7 and Option 9
(1000 units per reel)
Rev. 1.7, 18-Feb-13
Document Number: 81775
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO610A
www.vishay.com
Vishay Semiconductors
1.5 ± 0.1
4 ± 0.1
2 ± 0.1
1.75 ± 0.1
0.35 ± 0.1
11.5 ± 0.1
24 ± 0.3
12.5 ± 0.1
X
5° max.
X
5° max.
8 ± 0.1
3.9 ± 0.1
1.5 ± 0.1
4.65 ± 0.1
Section X-X
R0.76
Fig. 8 - Tape and Reel Packing for Option 8
(2000 units per reel)
Rev. 1.7, 18-Feb-13
Document Number: 81775
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000