CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST Datasheet

CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
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Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
FEATURES
Top View
CNY64ST
A
C
C
E
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 475
• Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements
CNY65ST
V
D E
17187-6
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
17187-5
DESCRIPTION
APPLICATIONS
The CNY6XST, the high isolation voltage SMD version
optocouplers consist of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic package.
• Solar and wind power diagnostic, monitoring, and
communication equipment
• Welding equipment
• High voltage motors
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage ≤ 300 V
- for appl. class I to IV at mains voltage ≤ 600 V
- for appl. class I to III at mains voltage ≤ 1000 V
according to DIN EN 60747-5-5 (VDE 0884-5)
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-5 (VDE 0884-5)
Optocoupler for electrical safety requirements
• IEC 60065
Safety for mains-operated
household apparatus
electronic
and
related
AGENCY APPROVALS
• DIN EN 60747-5-5 (VDE 0884-5)
• UL1577, file no. E76222
• VDE related features:
- rated impulse voltage (transient
VIOTM = 12 kVpeak
• VDE 0160
Electronic equipment for electrical power installation
overvoltage),
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kVpeak
ORDERING INFORMATION
CNY64ST
C
N
Y
6
PART NUMBER
#
X
X
PACKAGE
OPTION
X
S
CNY65ST
T
CTR BIN
10.16 mm
15.24 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
5 mA
UL, VDE
50 to 300
50 to 150
80 to 240
100 to 300
SMD-4 HV, 400 mil high isolation distance
CNY64ST
CNY64AYST
CNY64ABST
CNY64AGRST
SMD-4 HV, 600 mil high isolation distance
CNY65ST
CNY65AYST
CNY65ABST
CNY65AGRST
Rev. 1.1, 26-Jun-14
Document Number: 82387
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
75
mA
Forward surge current
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
mA
Power dissipation
Junction temperature
OUTPUT
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
IC
50
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
kVRMS
COUPLER
AC isolation test voltage CNY64AxxxST
t = 1 min
VISO
8.2
DC isolation test voltage CNY65AxxxST
t=1s
VISO
13.9
kV
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
-55 to +85
°C
Storage temperature range
Tstg
-55 to +100
°C
Tsld
260
°C
Soldering temperature
2 mm from case, ≤ 10 s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.32
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 1 mA
VCEO
32
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, IF = 0 mA
ICEO
Junction capacitance
V
pF
OUTPUT
Collector emitter leakage current
200
nA
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
IF = 10 mA, IC = 1 mA
VCEsat
VCE = 5 V, IF = 10 mA, RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.3
pF
0.3
V
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.1, 26-Jun-14
Document Number: 82387
2
For technical questions, contact: [email protected]
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CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IC/IF
VCE = 5 V, IF = 5 mA
PART
SYMBOL
MIN.
CNY64ST
CTR
50
TYP.
MAX.
UNIT
300
%
CNY65ST
CTR
50
300
%
CNY64AYST
CTR
50
150
%
CNY65AYST
CTR
50
150
%
CNY64ABST
CTR
80
240
%
CNY65ABST
CTR
80
240
%
CNY64AGRST
CTR
100
300
%
CNY65AGRST
CTR
100
300
%
SAFETY AND INSULATION PARAMETERS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage routine test
100 %, ttest = 1 s
Vpd
2.8
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Vpd
2.2
kV
Insulation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Tracking resistance
(comparative tracking index)
Minimum external tracking
(creepage distance)
Insulation group IVa
Measured from
input pins to output pins
Isi
120
mA
Pso
250
mW
VIOTM
12
kV
Tsi
150
°C
CTI
475
CNY64ST
≥ 9.5
mm
CNY65ST
≥ 14
mm
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
VIOTM
250
225
t1, t2
t3 , t4
ttest
tstres
Pso (mW)
200
175
150
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
125
VIOWM
VIORM
100
75
Isi (mA)
50
25
0
0
0
25
50
75 100 125 150 175 200
Tamb (°C)
22292
Fig. 1 - Safety Derating Diagram
Rev. 1.1, 26-Jun-14
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Document Number: 82387
3
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SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
Delay time
PARAMETER
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
td
MIN.
TYP.
2.6
MAX.
UNIT
μs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tr
2.4
μs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
tf
2.7
μs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
ton
5
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3)
toff
3
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
ton
25
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4)
toff
42.5
μs
IF
IF
0
0
+5V
IF
IC = 5 mA; adjusted through
input amplitude
RG = 50
tp
= 0.01
T
tp = 50 µs
50
100
Oscilloscope
RL 1 M
CL 20 pF
95 10900
Fig. 3 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
10 %
0
Channel I
Channel II
tp
IC
tr
td
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 5 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 4 - Test Circuit, Saturated Operation
Rev. 1.1, 26-Jun-14
Document Number: 82387
4
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30
280
IC - Collector Current (mA)
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
240
Coupled device
200
160
Phototransistor
120
IR-diode
80
40
20
15
IF = 10 mA
10
IF = 5 mA
5
IF = 1 mA
0
0
25
50
0
100
75
22509
Tamb - Ambient Temperature (°C)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
0.1
0.3
0.4
0.5
Tamb = -55 °C
10
Tamb = -40 °C
Tamb = 0 °C
Tamb = 25 °C
Tamb = 50 °C
1
Tamb = 75 °C
Tamb = 85 °C
ICEO - Leakage Current (nA)
1000
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IF = 0 mA
100
10
1
VCE = 12 V
VCE = 24 V
0.1
VCE = 40 V
0.01
-55
1.8
-35
-15
5
25
45
65
85
Tamb - Ambient Temperature (°C)
VF - Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Leakage Current vs. Ambient Temperature
45
1.2
40
NCTR - Normalized CTR (sat)
IC - Collector Current (mA)
0.2
VCE - Collector Emitter Voltage (sat) (V)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
100
IF = 30 mA
35
30
IF = 20 mA
25
20
IF = 15 mA
15
IF = 10 mA
10
5
IF = 5 mA
0
0
22508
IF = 2 mA
0
22293
IF - Forward Current (mA)
IF = 25 mA
25
2
4
6
8
10
12
VCE - Collector Emitter Voltage (NS) (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS)
Rev. 1.1, 26-Jun-14
IF = 10 mA
VCE = 0.4 V
1.0
IF = 5 mA
0.8
0.6
IF = 1 mA
0.4
0.2
0
-55
-35
-15
5
25
45
65
85
Tamb - Ambient Temperature (°C)
Fig. 11 - Normalized CTR (sat) vs. Ambient Temperature
Document Number: 82387
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1000
IF = 10 mA
VCE = 5 V
VCE = 5 V
1.0
IF = 5 mA
0.8
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.2
0.6
IF = 1 mA
0.4
100
10
0.2
0
-55
1
-35
-15
5
25
45
65
85
Tamb - Ambient Temperature (°C)
0.1
Fig. 12 - Normalized CTR (NS) vs. Ambient Temperature
20
VCE = 5 V
Tamb = 25 °C
1.2
-20
Tamb = 50 °C
1.0
0.8
Tamb = -40 °C
0.6
Tamb = -55 °C
Tamb = 75 °C
0.4
-40
-60
-80
-100
-120
-140
Tamb = 85 °C
0.2
100
VCE = 5 V
0
Tamb = 0 °C
Phase (deg)
NCTR - Normalized CTR (NS)
10
Fig. 15 - FCTR vs. Collector Current
1.4
-160
0
-180
0.1
1
10
100
IF - Forward Current (mA)
1
1.2
22516
Tamb = 0 °C
Tamb = 50 °C
0.8
0.6
Tamb = -40 °C
Tamb = -55 °C
0.4
Tamb = 75 °C
Tamb = 85 °C
0.2
VCE = 5 V,
IF = 10 mA
1
10
10
ton
1
100
IF - Forward Current (mA)
Fig. 14 - Normalized CTR (sat) vs. Forward Current
Rev. 1.1, 26-Jun-14
toff
100
0.1
0
0.1
1000
1000
ton, toff - Switching Time (μs)
1.0
100
Fig. 16 - FCTR vs. Phase Angle
Tamb = 25 °C
VCE = 0.4 V
10
Frequency (kHz)
Fig. 13 - Normalized CTR (NS) vs. Forward Current
NCTR - Normalized CTR (sat)
1
IC - Collector Current (mA)
22515
22517
0.1
1
10
100
RL - Load Resistance (kΩ)
Fig. 17 - Switching Time vs. Load Resistance
Document Number: 82387
6
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SOLDERING GUIDLINES
Soldering Condition
Floor Life
The CNY64AxST, CNY65AxST are lead (Pb)-free devices.
They are suitable for reflow soldering. However due to large
package size, the peak package body temperature should
not go above 245 °C.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
300
Moisture sensitivity level 4, according to J-STD-020.
Temperature (°C)
250
245 °C
240 °C
217 °C
Drying
In case of moisture absorption devices should be baked
before soldering according to the recommended conditions
shown below
200
max. 20 s
150
max. 100 s
max. 120 s
48 h at 125 °C ± 5 °C, RH < 5%
100
max. ramp down 6 °C/s
50
(Not suitable for tape and reel)
max. ramp up 3 °C/s
In case the floor time has not exceeded 10 days the units
can be baked in tape and reel according to the following
conditions
max. 2 cycles allowed
0
0
50
100
150
200
250
300
168 h at 60 °C ± 5 °C, RH < 5 %
Time (s)
22550
(Not suitable, if the floor time was exceeded by more than
10 days, or the allowed factory condition is exceeded)
Drypack
Devices are packed in moisture barrier bags (MBB) to
prevent moisture absorption during transportation and
storage. Each bag contains a desiccant bag.
PACKAGE DIMENSIONS in millimeters FOR CNY64A...ST
14.4 ± 0.3
6 ± 0.2
7.2 ± 0.2
12.8 ± 0.2
7.05 ± 0.4
0.4 ± 0.1
Z
0.5 ± 0.2
2.1 ± 0.5
5.08 ± 0.4
Leads coplanarity
0.1 max.
Anode
Cathode
Z 10:1
Collector
Emitter
Recommended footprint
15.9
6.544-5406.01-4
Rev. 1.1, 26-Jun-14
technical drawings
according to DIN
specifications
2.9
5.08
9
Document Number: 82387
7
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PACKAGE DIMENSIONS in millimeters FOR CNY65A...ST
19.4 ± 0.3
17.8 ± 0.2
6.1 ± 0.2
9.6 ± 0.2
7.15 ± 0.4
0.4 ± 0.1
Z
0.5 ± 0.2
2.1 ± 0.5
7.62 ± 0.4
Leads coplanarity
0.1 max.
Anode
Cathode
Z 10:1
Collector
Recommended footprint
Emitter
20.9
14
2.9
7.62
technical drawings
according to DIN
specifications
PACKAGE MARKING (Example)
CNY65AY
V YWWJ 69
Note
• The “T” at the end of the product designation is not marked on the package
Rev. 1.1, 26-Jun-14
Document Number: 82387
8
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TAPE DIMENSIONS in millimeters FOR CNY64A...ST
8
Ø 1.55 ± 0.05
1.75 ± 0.1
2 ± 0.15
7.6
4 ± 0.1
0.4 ± 0.05
Top cover
tape
14.2 ± 0.10
13.2
25.5
32 ± 0.3
1.75
16 ± 0.1
R0.78
Leader (start) min. 400 mm without devices
Trailer (end) min. 200 mm without devices
Ø 2 min.
5.65
Direction of feed
TAPE DIMENSIONS in millimeters FOR CNY65A...ST
8
Ø 1.55 ± 0.05
2 ± 0.15
9.9
4 ± 0.1
0.4 ± 0.05
1.75 ± 0.1
Top cover
tape
14.2 ± 0.10
18.1
25.5
32 ± 0.3
1.75
R0.78
16 ± 0.1
Ø 2 min.
5.65
Direction of feed
Leader (start) min. 400 mm without devices
Trailer (end) min. 200 mm without devices
Drawing-No.: 9.700-5376.01-4
Issue: 1; 23.05.11
Rev. 1.1, 26-Jun-14
technical drawings
according to DIN
specifications
Document Number: 82387
9
For technical questions, contact: [email protected]
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REEL DIMENSIONS in millimeters
Reel size "Y"
T: Ø 330 ± 2
Unreel direction
2±
Ø 60 min.
Tape position
coming out from reel
ØY
0.5
Ø 21 ± 0.8
Ø 13 ± 0.2
Label posted here
32.4 + 2/0
38.4 max.
Empty leader 400 mm min.
Parts mounted
100 mm min. with cover tape
Leader and trailer tape:
Direction of pulling out
Empty trailer 200 mm min.
Not indicated tolerances ± 0.1
Drawing-No.: 9.800-5120.01-4
Issue: 1; 23.05.11
Rev. 1.1, 26-Jun-14
technical drawings
according to DIN
specifications
Document Number: 82387
10
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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