CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES Top View CNY64ST A C C E • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 475 • Moisture sensitivity level MSL4 - Follow defined storage and soldering requirements CNY65ST V D E 17187-6 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 17187-5 DESCRIPTION APPLICATIONS The CNY6XST, the high isolation voltage SMD version optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. • Solar and wind power diagnostic, monitoring, and communication equipment • Welding equipment • High voltage motors • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage ≤ 300 V - for appl. class I to IV at mains voltage ≤ 600 V - for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884-5) The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 (VDE 0884-5) Optocoupler for electrical safety requirements • IEC 60065 Safety for mains-operated household apparatus electronic and related AGENCY APPROVALS • DIN EN 60747-5-5 (VDE 0884-5) • UL1577, file no. E76222 • VDE related features: - rated impulse voltage (transient VIOTM = 12 kVpeak • VDE 0160 Electronic equipment for electrical power installation overvoltage), - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kVpeak ORDERING INFORMATION CNY64ST C N Y 6 PART NUMBER # X X PACKAGE OPTION X S CNY65ST T CTR BIN 10.16 mm 15.24 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, VDE 50 to 300 50 to 150 80 to 240 100 to 300 SMD-4 HV, 400 mil high isolation distance CNY64ST CNY64AYST CNY64ABST CNY64AGRST SMD-4 HV, 600 mil high isolation distance CNY65ST CNY65AYST CNY65ABST CNY65AGRST Rev. 1.1, 26-Jun-14 Document Number: 82387 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Pdiss 120 mW Tj 100 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 130 mW Tj 100 °C kVRMS COUPLER AC isolation test voltage CNY64AxxxST t = 1 min VISO 8.2 DC isolation test voltage CNY65AxxxST t=1s VISO 13.9 kV Total power dissipation Ptot 250 mW Ambient temperature range Tamb -55 to +85 °C Storage temperature range Tstg -55 to +100 °C Tsld 260 °C Soldering temperature 2 mm from case, ≤ 10 s Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.32 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 mA ICEO Junction capacitance V pF OUTPUT Collector emitter leakage current 200 nA COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance IF = 10 mA, IC = 1 mA VCEsat VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF 0.3 V Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.1, 26-Jun-14 Document Number: 82387 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF VCE = 5 V, IF = 5 mA PART SYMBOL MIN. CNY64ST CTR 50 TYP. MAX. UNIT 300 % CNY65ST CTR 50 300 % CNY64AYST CTR 50 150 % CNY65AYST CTR 50 150 % CNY64ABST CTR 80 240 % CNY65ABST CTR 80 240 % CNY64AGRST CTR 100 300 % CNY65AGRST CTR 100 300 % SAFETY AND INSULATION PARAMETERS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 2.8 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 2.2 kV Insulation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Forward current Power dissipation Rated impulse voltage Safety temperature Tracking resistance (comparative tracking index) Minimum external tracking (creepage distance) Insulation group IVa Measured from input pins to output pins Isi 120 mA Pso 250 mW VIOTM 12 kV Tsi 150 °C CTI 475 CNY64ST ≥ 9.5 mm CNY65ST ≥ 14 mm Note • According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 250 225 t1, t2 t3 , t4 ttest tstres Pso (mW) 200 175 150 = 1 s to 10 s =1s = 10 s = 12 s Vpd 125 VIOWM VIORM 100 75 Isi (mA) 50 25 0 0 0 25 50 75 100 125 150 175 200 Tamb (°C) 22292 Fig. 1 - Safety Derating Diagram Rev. 1.1, 26-Jun-14 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 Document Number: 82387 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) td MIN. TYP. 2.6 MAX. UNIT μs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr 2.4 μs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf 2.7 μs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton 5 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff 3 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 μs IF IF 0 0 +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs 50 100 Oscilloscope RL 1 M CL 20 pF 95 10900 Fig. 3 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 Channel I Channel II tp IC tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation Rev. 1.1, 26-Jun-14 Document Number: 82387 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors 30 280 IC - Collector Current (mA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 240 Coupled device 200 160 Phototransistor 120 IR-diode 80 40 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA 0 0 25 50 0 100 75 22509 Tamb - Ambient Temperature (°C) Fig. 6 - Total Power Dissipation vs. Ambient Temperature 0.1 0.3 0.4 0.5 Tamb = -55 °C 10 Tamb = -40 °C Tamb = 0 °C Tamb = 25 °C Tamb = 50 °C 1 Tamb = 75 °C Tamb = 85 °C ICEO - Leakage Current (nA) 1000 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF = 0 mA 100 10 1 VCE = 12 V VCE = 24 V 0.1 VCE = 40 V 0.01 -55 1.8 -35 -15 5 25 45 65 85 Tamb - Ambient Temperature (°C) VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Leakage Current vs. Ambient Temperature 45 1.2 40 NCTR - Normalized CTR (sat) IC - Collector Current (mA) 0.2 VCE - Collector Emitter Voltage (sat) (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage 100 IF = 30 mA 35 30 IF = 20 mA 25 20 IF = 15 mA 15 IF = 10 mA 10 5 IF = 5 mA 0 0 22508 IF = 2 mA 0 22293 IF - Forward Current (mA) IF = 25 mA 25 2 4 6 8 10 12 VCE - Collector Emitter Voltage (NS) (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Rev. 1.1, 26-Jun-14 IF = 10 mA VCE = 0.4 V 1.0 IF = 5 mA 0.8 0.6 IF = 1 mA 0.4 0.2 0 -55 -35 -15 5 25 45 65 85 Tamb - Ambient Temperature (°C) Fig. 11 - Normalized CTR (sat) vs. Ambient Temperature Document Number: 82387 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors 1000 IF = 10 mA VCE = 5 V VCE = 5 V 1.0 IF = 5 mA 0.8 FCTR (kHz) NCTR - Normalized CTR (NS) 1.2 0.6 IF = 1 mA 0.4 100 10 0.2 0 -55 1 -35 -15 5 25 45 65 85 Tamb - Ambient Temperature (°C) 0.1 Fig. 12 - Normalized CTR (NS) vs. Ambient Temperature 20 VCE = 5 V Tamb = 25 °C 1.2 -20 Tamb = 50 °C 1.0 0.8 Tamb = -40 °C 0.6 Tamb = -55 °C Tamb = 75 °C 0.4 -40 -60 -80 -100 -120 -140 Tamb = 85 °C 0.2 100 VCE = 5 V 0 Tamb = 0 °C Phase (deg) NCTR - Normalized CTR (NS) 10 Fig. 15 - FCTR vs. Collector Current 1.4 -160 0 -180 0.1 1 10 100 IF - Forward Current (mA) 1 1.2 22516 Tamb = 0 °C Tamb = 50 °C 0.8 0.6 Tamb = -40 °C Tamb = -55 °C 0.4 Tamb = 75 °C Tamb = 85 °C 0.2 VCE = 5 V, IF = 10 mA 1 10 10 ton 1 100 IF - Forward Current (mA) Fig. 14 - Normalized CTR (sat) vs. Forward Current Rev. 1.1, 26-Jun-14 toff 100 0.1 0 0.1 1000 1000 ton, toff - Switching Time (μs) 1.0 100 Fig. 16 - FCTR vs. Phase Angle Tamb = 25 °C VCE = 0.4 V 10 Frequency (kHz) Fig. 13 - Normalized CTR (NS) vs. Forward Current NCTR - Normalized CTR (sat) 1 IC - Collector Current (mA) 22515 22517 0.1 1 10 100 RL - Load Resistance (kΩ) Fig. 17 - Switching Time vs. Load Resistance Document Number: 82387 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors SOLDERING GUIDLINES Soldering Condition Floor Life The CNY64AxST, CNY65AxST are lead (Pb)-free devices. They are suitable for reflow soldering. However due to large package size, the peak package body temperature should not go above 245 °C. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % 300 Moisture sensitivity level 4, according to J-STD-020. Temperature (°C) 250 245 °C 240 °C 217 °C Drying In case of moisture absorption devices should be baked before soldering according to the recommended conditions shown below 200 max. 20 s 150 max. 100 s max. 120 s 48 h at 125 °C ± 5 °C, RH < 5% 100 max. ramp down 6 °C/s 50 (Not suitable for tape and reel) max. ramp up 3 °C/s In case the floor time has not exceeded 10 days the units can be baked in tape and reel according to the following conditions max. 2 cycles allowed 0 0 50 100 150 200 250 300 168 h at 60 °C ± 5 °C, RH < 5 % Time (s) 22550 (Not suitable, if the floor time was exceeded by more than 10 days, or the allowed factory condition is exceeded) Drypack Devices are packed in moisture barrier bags (MBB) to prevent moisture absorption during transportation and storage. Each bag contains a desiccant bag. PACKAGE DIMENSIONS in millimeters FOR CNY64A...ST 14.4 ± 0.3 6 ± 0.2 7.2 ± 0.2 12.8 ± 0.2 7.05 ± 0.4 0.4 ± 0.1 Z 0.5 ± 0.2 2.1 ± 0.5 5.08 ± 0.4 Leads coplanarity 0.1 max. Anode Cathode Z 10:1 Collector Emitter Recommended footprint 15.9 6.544-5406.01-4 Rev. 1.1, 26-Jun-14 technical drawings according to DIN specifications 2.9 5.08 9 Document Number: 82387 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY65A...ST 19.4 ± 0.3 17.8 ± 0.2 6.1 ± 0.2 9.6 ± 0.2 7.15 ± 0.4 0.4 ± 0.1 Z 0.5 ± 0.2 2.1 ± 0.5 7.62 ± 0.4 Leads coplanarity 0.1 max. Anode Cathode Z 10:1 Collector Recommended footprint Emitter 20.9 14 2.9 7.62 technical drawings according to DIN specifications PACKAGE MARKING (Example) CNY65AY V YWWJ 69 Note • The “T” at the end of the product designation is not marked on the package Rev. 1.1, 26-Jun-14 Document Number: 82387 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors TAPE DIMENSIONS in millimeters FOR CNY64A...ST 8 Ø 1.55 ± 0.05 1.75 ± 0.1 2 ± 0.15 7.6 4 ± 0.1 0.4 ± 0.05 Top cover tape 14.2 ± 0.10 13.2 25.5 32 ± 0.3 1.75 16 ± 0.1 R0.78 Leader (start) min. 400 mm without devices Trailer (end) min. 200 mm without devices Ø 2 min. 5.65 Direction of feed TAPE DIMENSIONS in millimeters FOR CNY65A...ST 8 Ø 1.55 ± 0.05 2 ± 0.15 9.9 4 ± 0.1 0.4 ± 0.05 1.75 ± 0.1 Top cover tape 14.2 ± 0.10 18.1 25.5 32 ± 0.3 1.75 R0.78 16 ± 0.1 Ø 2 min. 5.65 Direction of feed Leader (start) min. 400 mm without devices Trailer (end) min. 200 mm without devices Drawing-No.: 9.700-5376.01-4 Issue: 1; 23.05.11 Rev. 1.1, 26-Jun-14 technical drawings according to DIN specifications Document Number: 82387 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters Reel size "Y" T: Ø 330 ± 2 Unreel direction 2± Ø 60 min. Tape position coming out from reel ØY 0.5 Ø 21 ± 0.8 Ø 13 ± 0.2 Label posted here 32.4 + 2/0 38.4 max. Empty leader 400 mm min. Parts mounted 100 mm min. with cover tape Leader and trailer tape: Direction of pulling out Empty trailer 200 mm min. Not indicated tolerances ± 0.1 Drawing-No.: 9.800-5120.01-4 Issue: 1; 23.05.11 Rev. 1.1, 26-Jun-14 technical drawings according to DIN specifications Document Number: 82387 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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