MCT5211 Datasheet

MCT5211
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current,
with Base Connection
FEATURES
• Saturation CTR - MCT5211, > 100 % at
IF = 1.6 mA
A
1
6 B
C
2
5 C
• High isolation voltage, 5300 VRMS
4 E
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
NC
3
i179004-7
V
D E
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
i179004-3
• BSI IEC 60950; IEC 60065
DESCRIPTION
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
The MCT5211 is a optocoupler with a high efficiency AIGaAs
LED optically coupled to a NPN phototransistor. The high
performance LED makes operation at low input currents
practical. The coupler is housed in a six pin DIP package.
Isolation test voltage is 5300 VRMS.
Because these parts have guaranteed CTRs at 1 mA and
3 mA, they are ideally suitable for interfacing from CMOS
to TTL or LSTTL to TTL. They are also ideal for
telecommunications applications such as ring or off-hook
detection.
• CSA 93751
ORDERING INFORMATION
M
C
T
5
2
1
1
-
PART NUMBER
X
0
#
#
PACKAGE OPTION
T
TAPE
AND
REEL
DIP
7.62 mm
Option 7
> 0.7 mm
Option 9
> 0.1 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
1 mA
UL, BSI, CSA
> 110
DIP-6
MCT5211
SMD-6, option 7
MCT5211-X007T (1)
SMD-6, option 9
MCT5211-X009T (1)
UL, BSI, CSA, VDE
> 110
SMD-6, option 7
MCT5211-X017T
Note
• Additional options may be possible, please contact sales office.
(1) Also available in tubes, do not put T on the end.
Document Number: 83657
Rev. 1.6, 23-Feb-11
For technical questions, contact: [email protected]
www.vishay.com
1
MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
6
V
Forward continuos current
IF
40
mA
Pdiss
75
mW
1
mW/°C
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown
voltage
BVCEO
30
V
Emitter collector breakdown
voltage
BVECO
7
V
Collector base breakdown
voltage
BVCBO
70
V
Pdiss
200
mW
2.6
mW/°C
VRMS
Power dissipation
Derate linearly from 25 °C
COUPLER
Isolation test voltage
VISO
5300
Total package dissipation (LED and detector)
Ptot
260
mW
Derate linearly from 25 °C
3.5
mW/°C
Creepage distance
7
mm
Clearance distance
7
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
CTI
175
VIO = 500 V, Tamb = 25 °C
RIO
 1012
VIO = 500 V, Tamb = 100 °C
RIO
 1011

Operating temperature
Tamb
- 55 to + 100
°C
Storage temperature
Tstg
- 55 to + 150
°C
Isolation resistance

Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.2
1.5
V
INPUT
Forward voltage
IF = 5 mA
VF
Reverse voltage
IR = 10 μA
VR
6
V
OUTPUT
DC forward current gain
VCE = 5 V, IC = 100 μA
hFE
100
Collector emitter breakdown
voltage
IC = 100 μA
BVCEO
30
V
Emitter collector breakdown
voltage
IE = 100 μA
BVECO
7
V
Collector base breakdown
voltage
IE = 10 μA
BVCBO
70
V
Collector emitter leakage
voltage
VCE = 10 V
ICEO
5
100
nA
VCEsat
0.25
0.4
V
200
COUPLER
Saturation voltage
IF = 1.6 mA, IC = 1.6 mA
MCT5211
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
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2
For technical questions, contact: [email protected]
Document Number: 83657
Rev. 1.6, 23-Feb-11
MCT5211
Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Current transfer ratio
(collector emitter saturated)
Current transfer ratio
Current transfer ratio
(collector base)
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
VCE = 0.4 V, IF = 1.6 mA
MCT5211
CTRCEsat
100
200
MAX.
UNIT
%
VCE = 0.4 V, IF = 1 mA
MCT5211
CTRCEsat
75
150
%
VCE = 5 V, IF = 1.6 mA
MCT5211
CTR
150
300
%
VCE = 5 V, IF = 1 mA
MCT5211
CTR
110
225
%
VCE = 4.3 V, IF = 1.6 mA
MCT5211
CTRCB
0.3
0.6
%
VCE = 4.3 V, IF = 1 mA
MCT5211
CTRCB
0.25
0.5
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Propagation delay high to low
Propagation delay low to high
TEST CONDITION
PART
SYMBOL
RL = 750  , IF = 1.6 mA,
VCC = 5 V
MCT5211
tPHL
20
μs
RL = 1.5 k , IF = 1 mA,
VCC = 5 V
MCT5211
tPHL
40
μs
RL = 750  , IF = 1.6 mA,
VCC = 5 V
MCT5211
tPLH
20
μs
RL = 1.5 k , IF = 1 mA,
VCC = 5 V
MCT5211
tPLH
40
μs
V CC = 5 V
Input
MIN.
TYP.
MAX.
UNIT
IF
RL
VOUT
tD
VO
tR
t PL H
V TH = 1.5 V
imct5210_18
t PHL
tS
tF
imct5210_03
Fig. 1 - Switching Schematic
Document Number: 83657
Rev. 1.6, 23-Feb-11
Fig. 2 - Switching Waveform
For technical questions, contact: [email protected]
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3
MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
35
1000
Icb - Photocurrent (µA)
IF - LED Current (mA)
30
25
20
15
10
100
10
1
5
0
1.0
1.1
1.2
1.3
VF - LED Forward Voltage (V)
imct5210_01
0.1
0.1
1.4
imct5210_05
100
100
1.0
CTRcb - Collector Base CTR (%)
IF - LED Current (mA)
10
Fig. 6 - Photocurrent vs. LED Current
Fig. 3 - Forward Current vs. Forward Voltage
10
1
0.1
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.1
1.3
1.4
VF - LED Forward Voltage (V)
imct5210_04
0
imct5210_07
Fig. 4 - LED Forward Current vs. Forward Voltage
5
10
15
20
25
30
35
IF - LED Current (mA)
Fig. 7 - Collector Base CTR vs. LED Current
300
1.0
CTRcb - Collector Base - CTR (%)
Icb - Photocurrent (µA)
1
IF - LED Current (mA)
250
200
150
100
50
0
0
imct5210_05
5
10
15
20
25
30
35
40
IF - LED Current (mA)
Fig. 5 - Collector Base Photocurrent vs. LED Current
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4
0.8
0.6
0.4
0.2
0.0
0.1
imct5210_08
1
10
100
IF - LED Current (mA)
Fig. 8 - Collector Base CTR vs. LED Current
For technical questions, contact: [email protected]
Document Number: 83657
Rev. 1.6, 23-Feb-11
MCT5211
Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
800
700
500
10 V
5V
2V
1V
0.4 V
200
600
500
Vce
10 V
400
5V
300
2V
1V
200
0.4 V
100
100
.1
1
10
100
1
10
100
1000
imct5210_12
IF - LED Current (mA)
imct5210_09
.1
Ib - Base Current (µA)
Fig. 9 - CTR vs. LED Current
70
Vce
10 V
60
5V
100
50
2V
40
1V
30
800
Vce = 10 V
IF - LED Current (mA)
80
Fig. 12 - Transistor Current Gain vs. Base Current
0.4 V
20
700
10
Ice = Icb x hFE
1
600
hFE - Transistor Gain
Ratio (%)
Vce
400
300
700
HFE - DC Current Gain (Ice/Ib)
600
Ice - Collector Current (mA)
Vishay Semiconductors
10
0
imct5210_10
5
10
15
20
IF - LED Current (mA)
0.1
0.1
25
imct5210_13
Fig. 10 - Collector Current vs. LED Current
100
500
1000
Icb - Photocurrent (mA)
100
10 V
5V
2V
1V
0.4 V
700
Vce = 0.4 V
Vce
10
10
Fig. 13 - Transfer Curve
IF - LED Current (mA)
Ice - Collector Current (mA)
100
1
1
600
Ice = Icb x HFE
10
500
400
1
300
200
0.1
0.1
imct5210_11
1
10
100
IF - LED Current (mA)
Fig. 11 - Collector Current vs. LED Current
Document Number: 83657
Rev. 1.6, 23-Feb-11
.1
.1
imct5210_14
1
10
100
HFE - Transistor Gain
0
100
1000
Icb - Photocurrent (µA)
Fig. 14 - Transfer Curve
For technical questions, contact: [email protected]
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5
MCT5211
Vishay Semiconductors Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
70
Propagation Delay (µs)
60
tPLH
50
IF = 1 mA
RL = 10 K
40
Vth = 1.5 V
Vce = 5 V
30
tPHL
20
10
105
imct5210_15
106
107
Rbe - Base Emitter Resistor
Fig. 15 - Propagation Delay vs. Base Emitter Resistor
Propagation Delay (µs)
50
40
30
tPLH
IF = 1.6 mA
RL = 4.7 K
Vth = 1.5 V
Vce = 5 V
20
10
tPLH
0
105
imct5210_16
106
107
Rbe - Base Emitter Resistor
Fig. 16 - Propagation Delay vs. Base Emitter Resistor
40
Probagation Delay (µs)
35
30
tPLH
IF = 3 mA
RL = 3 K
Vth = 1.5 V
Vce = 5 V
25
20
15
10
tPHL
5
0
104
imct5210_17
105
106
107
Rbe - Base Emitter Resistor
Fig. 17 - Propagation Delay vs. Base Emitter Resistor
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For technical questions, contact: [email protected]
Document Number: 83657
Rev. 1.6, 23-Feb-11
MCT5211
Optocoupler, Phototransistor Output, Low
Input Current, with Base Connection
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
7.62 typ.
1.2 ± 0.1
1 min.
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.25 typ.
3° to 9°
0.5 ± 0.05
7.62 to 8.81
i178004
2.54 typ.
Option 7
Option 9
7.62 typ.
10.3 max.
7.62 typ.
0.7 min.
4.3 ± 0.3
8 min.
0.1 ± 0.1
3.6 ± 0.3
0.6 min.
0.6 min.
10.3 max.
8 min.
20802-19
0.76
R 0.25
2.54
0.76
2.54
R 0.25
1.78
8 min.
11.05
1.52
1.78
8 min.
11.05
1.52
PACKAGE MARKING (example)
MCT5211
V YWW H 68
21764-98
Notes
• Only option 7 is reflected in the package marking.
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Document Number: 83657
Rev. 1.6, 23-Feb-11
For technical questions, contact: [email protected]
www.vishay.com
7
DIP-6A
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Vishay Semiconductors
DIP-6A
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
Pin one ID
6.4 ± 0.1
ISO method A
8.6 ± 0.1
1 min.
7.62 typ.
1.2 ± 0.1
3.555 ± 0.255
18°
4° typ.
2.95 ± 0.5
0.8 min.
0.85 ± 0.05
0.5 ± 0.05
3° to 9°
0.25 typ.
7.62 to 8.81
i178004
2.54 typ.
Note
The information in this document provides generic information but for specific information on a product the appropriate product datasheet
should be used.
Rev. 1.2, 24-Aug-15
Document Number: 83263
1
For technical questions, contact: [email protected]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000