MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES A 1 6 B • Isolation test voltage, 5300 VRMS C 2 5 C • No base terminal connection for improved common mode interface immunity NC 3 4 E • Long term stability • Industry standard dual in line package • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC i179009-1 DESCRIPTION AGENCY APPROVALS The MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. • UL1577, file no. E52744 system code H or J, double protection • CSA 93751 • BSI IEC 60950; IEC 60065 The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. • DIN EN 60747-5-5 (VDE 0884) available with option 1 The base terminal of the MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 is not connected, resulting in a substantially improved common mode interference immunity. ORDERING INFORMATION M O C 8 1 0 # PART NUMBER - # X CTR BIN 0 # # PACKAGE OPTION DIP-# Option 6 7.62 mm 10.16 mm T TAPE AND REEL Option 7 > 0.7 mm DIP-6 DIP-6, 400 mil, option 6 > 0.1 mm CTR (%) AGENCY CERTIFIED/PACKAGE UL, CSA, BSI Option 9 10 mA 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 MOC8101 MOC8102 MOC8103 MOC8104 MOC8105 - MOC8102-X006 - - - MOC8101-X009 MOC8102-X009 - - - 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133 MOC8101-X001 - MOC8103-X001 - - - MOC8102-X016 - MOC8104-X016 - SMD-6, option 7 MOC8101-X017T MOC8102-X017T - - - SMD-6, option 9 - - - MOC8104-X019T - SMD-6, option 9 VDE, UL, CSA, BSI DIP-6 DIP-6, 400 mil Note • Additional options may be possible, please contact sales office. Rev. 1.6, 13-Sep-11 Document Number: 83660 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Forward continuous current Surge forward current Power dissipation Derate linearly from 25°C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector current Derate linearly from 25°C Power dissipation COUPLER Isolation test voltage TEST CONDITION t 10 μs SYMBOL VALUE UNIT VR IF 6.0 60 2.5 100 1.33 V mA A mW mW/°C 30 7.0 50 2.0 150 V V mA mW/°C mW 5300 7.0 8.0 (2) 7.0 8.0 (2) VRMS mm mm mm mm 0.4 mm IFSM Pdiss BVCEO BVECO IC Pdiss VISO Creepage distance Clearance distance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Derate linearly from 25 °C Total power dissipation Storage temperature Operating temperature Junction temperature Soldering temperature (1) CTI 175 RIO Ptot Tstg Tamb Tj 1012 3.33 250 - 55 to + 150 - 55 to + 100 100 mW/°C mW °C °C °C Tsld 260 °C VIO = 500 V max. 10 s, dip soldering: distance to seating plane 1.5 mm Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). (2) Applies to wide bending option 6. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance OUTPUT Collector emitter capacitance Collector emitter dark current Collector emitter breakdown voltage Emitter collector breakdown voltage Thermal resistance COUPLER Saturation voltage collector emitter Coupling capacitance TEST CONDITION PART IF = 10 mA IR = 10 μA VR = 6.0 V VR = 0 V, f = 1.0 MHz VCE = 5.0 V, f = 1.0 MHz VCE = 10 V, Tamp = 25 °C VCE = 10 V, Tamp = 100 °C IC = 1.0 mA IE = 100 A IF = 5.0 mA SYMBOL VF VBR IR CO Rthja MOC8101 MOC8102 CCE ICEO1 ICEO1 BVCEO BVECO Rthja VCEsat CC MIN. TYP. MAX. UNIT 1.25 1.5 0.01 25 750 10 V V μA pF K/W 6.0 5.2 1.0 1.0 50 30 7.0 500 0.25 0.6 0.4 pF nA μA V V K/W V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.6, 13-Sep-11 Document Number: 83660 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Current transfer ratio VCE = 10 V, IF = 10 mA PART SYMBOL MIN. MOC8101 CTR 50 TYP. MAX. UNIT 80 % MOC8102 CTR 73 117 % MOC8103 CTR 108 173 % MOC8104 CTR 160 256 % MOC8105 CTR 65 133 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBO L Turn-on time VCC = 10 V, IC = 2.0 mA, RL = 100 ton 3.0 μs Turn-off time VCC = 10 V, IC = 2.0 mA, RL = 100 toff 2.3 μs Rise time VCC = 10 V, IC = 2.0 mA, RL = 100 tr 2.0 μs Fall time VCC = 10 V, IC = 2.0 mA, RL = 100 tf 2.0 μs fco 250 kHz Cut off frequency MIN. TYP. MAX. UNIT TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 25 1.7 MOC8104 IF = 10 mA 20 1.3 IC (mA) VF (V) 1.5 TA = 55 °C 1.1 TA = 25 °C 15 MOC8103 MOC8105 10 MOC8102 MOC8101 5 0.9 TA = 100 °C 0.7 0 0.1 1 imoc8101_02 10 0 100 1 2 3 imoc8101_04 IF (mA) Fig. 1 - Forward Voltage vs. Forward Current 4 5 6 7 8 9 10 VCE (V) Fig. 3 - Collector Current vs. Collector Emitter Voltage 10 10 1 Normalized to IF = 10 mA IC (mA) IC (Normalized) Normalized to TA = 25 °C IF = 10 mA VCE = 10 V 1 0.1 0.01 0.1 imoc8101_03 1 10 100 IF (mA) Fig. 2 - Collector Current vs. LED Forward Current Rev. 1.6, 13-Sep-11 0.1 - 60 - 40 - 20 0 imoc8101_05 20 40 60 80 100 120 TA (°C) Fig. 4 - Collector Current vs. Ambient Temperature Document Number: 83660 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors 20 10 000 Normalized to VCE = 10 V 18 C - Capacitance (pF) ICEO (Normalized) f= 1 MHz 16 1000 100 VCE = 30 V 10 VCE = 10 V 1 14 CLED 12 10 8 CCE 6 4 2 0 0.1 0 20 40 60 80 0.01 100 TA (°C) imoc8101_06 Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature IC 1 10 100 Voltage (V) Fig. 6 - Capacitance vs. Voltage VCC = 10 V IF 0.1 imoc8101_07 Input pulse R L = 100 Ω 10 % Input Output Output pulse 90 % tr t of f t on Test circuit tf Waveforms imoc81010_01 Fig. 7 - Switching Time Test Circuit and Waveforms Rev. 1.6, 13-Sep-11 Document Number: 83660 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 7.62 typ. 1.2 ± 0.1 1 min. 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.25 typ. 3° to 9° 0.5 ± 0.05 7.62 to 8.81 i178004 2.54 typ. Option 6 Option 7 Option 9 10.36 9.96 7.62 typ. 9.53 10.03 7.8 7.4 7.62 ref. 0.7 4.6 4.1 0.102 0.249 8 min. 0.35 0.25 0.25 typ. 0.51 1.02 8.4 min. 15° max. 8 min. 10.16 10.92 Rev. 1.6, 13-Sep-11 10.3 max. 18450 Document Number: 83660 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DIP-6A www.vishay.com Vishay Semiconductors DIP-6A PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 6.4 ± 0.1 ISO method A 8.6 ± 0.1 1 min. 7.62 typ. 1.2 ± 0.1 3.555 ± 0.255 18° 4° typ. 2.95 ± 0.5 0.8 min. 0.85 ± 0.05 0.5 ± 0.05 3° to 9° 0.25 typ. 7.62 to 8.81 i178004 2.54 typ. Note The information in this document provides generic information but for specific information on a product the appropriate product datasheet should be used. Rev. 1.2, 24-Aug-15 Document Number: 83263 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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