Small Signal Transistor Arrays UN230 Transistor array to drive the small motor ■ Features ■ Applications ● 1 10 For motor drives Small motor drive circuits in general 5 6 ■ Absolute Maximum Ratings 12° 12° 0 to 0.1 0.5 ● 1.5±0.1 0.8 5.5±0.3 8–0.9±0.1 ● 45° (Ta=25±3˚C) 6° Parameter Symbol Ratings Unit Collector to base voltage VCBO ±10 V Collector to emitter voltage VCEO ±10 V Collector current IC ±3 A Peak collector current ICP ±4 A Total power dissipation PT* 0.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active 6° +0.1 ● 0.2 –0.05 ● Unit: mm Small and lightweight Low power consumption Low-voltage drive With 4 elements incorporated 6.5±0.3 10–0.4±0.1 ● 0.5±0.2 7.7±0.3 SO–10C Package Internal Connection 1 10 2 9 3 8 4 7 5 6 1 Small Signal Transistor Arrays ■ Electrical Characteristics UN230 (Ta=25˚C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Collector cutoff current ICBO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob Forward voltage (DC) VF Bias resistance REB Conditions min (NPN) IC = 10µA, IE = 0 10 (PNP) IC = –10µA, IE = 0 –10 (NPN) IC = 1mA, IB = 0 10 (PNP) IC = –1mA, IB = 0 –10 typ max Unit V V (NPN) VCB = 6V, IE = 0 1 (PNP) VCB = –6V, IE = 0 –1 (NPN) VCE = 1V, IC = 0.5A* 200 700 (PNP) VCE = –1V, IC = – 0.5A* 200 700 (NPN) IC = 2A, IB = 50mA* µA 0.25 (PNP) IC = –2A, IB = –50mA* V – 0.45 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 150 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 150 (NPN) VCB = 6V, IE = 0, f = 1MHz 50 (PNP) VCB = –6V, IE = 0, f = 1MHz 70 MHz pF (NPN) IF = 1A 1.5 (PNP) IF = –1A 1.5 –30% 10 V +30% kΩ *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE 0.6 VCE(sat) — IC –10 0.5 –5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C 0.4 0.3 0.2 0.1 IB=–12mA –3 –10mA –8mA –6mA –2 –4mA –2mA –1 IC/IB=40 –3 –1 –0.3 –0.1 Ta=75˚C 25˚C –25˚C –0.03 –0.01 –0.003 0 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 –4 Collector to emitter saturation voltage VCE(sat) (V) –6 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 –0.001 –0.01 –0.03 –0.1 –0.3 –1 –3 Collector current IC (A) –10 Small Signal Transistor Arrays UN230 hFE — IC Cob — VCB 240 600 Collector output capacitance Cob (pF) Forward current transfer ratio hFE VCE=1V 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 –0.01 –0.03 –0.1 –0.3 –1 –3 f=1MHz IE=0 Ta=25˚C 200 160 120 80 40 0 –1 –10 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector current IC (A) Characteristics charts of NPN transistor block PT — Ta IC — VCE 0.6 VCE(sat) — IC 10 0.5 5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C 0.4 0.3 0.2 0.1 4 IB=12mA 3 10mA 8mA 2 6mA 4mA 1 0 0 20 40 60 2mA 0 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 hFE — IC Ta=75˚C 25˚C –25˚C 200 100 0.1 0.3 1 Collector current IC 3 (A) 10 240 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 500 0 0.01 0.03 10 12 IC/IB=40 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB VCE=1V 300 8 Collector to emitter voltage VCE (V) 600 400 6 Collector to emitter saturation voltage VCE(sat) (V) 6 f=1MHz IE=0 Ta=25˚C 200 160 120 80 40 0 1 3 10 30 100 Collector to base voltage VCB (V) 3