BPV11F Datasheet

BPV11F
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
12784
• Angle of half sensitivity:  = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT
Ica (mA)
 (deg)
0.5 (nm)
9
± 15
900 to 980
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
BPV11F
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPV11F
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
UNIT
Collector base voltage
PARAMETER
TEST CONDITION
VCBO
80
V
Collector emitter voltage
VCEO
70
V
Emitter base voltage
VEBO
5
V
mA
Collector current
Collector peak current
Power dissipation
IC
50
tp/T = 0.5, tp  10 ms
ICM
100
mA
Tamb  47 °C
PV
150
mW
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.6, 03-May-13
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
t  5 s, 2 mm from body
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Document Number: 81505
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV11F
www.vishay.com
Vishay Semiconductors


PV - Power Dissipation (mW)
200
160
120
RthJA
80
40
0
0
20
40
60
80
Tamb - Ambient Temperature (°C)
94 8300
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
VCE = 10 V, E = 0
Collector emitter breakdown voltage
Collector emitter dark current
TYP.
MAX.
UNIT
ICEO
1
50
nA
V
DC current gain
VCE = 5 V, IC = 5 mA, E = 0
hFE
450
Collector emitter capacitance
VCE = 0 V, f = 1 MHz, E = 0
CCEO
15
Collector base capacitance
VCE = 0 V, f = 1 MHz, E = 0
CCBO
19
pF
Ee = 1 mW/cm2,  = 950 nm, VCB = 5 V
Ica
9
mA
± 15
deg
Collector light current
3

Angle of half sensitivity
pF
p
930
nm
0.5
900 to 980
nm
Ee = 1 mW/cm2,  = 950 nm, IC = 1 mA
VCEsat
130
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 
ton
6
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 
toff
5
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 
fc
110
kHz
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
300
mV
μs
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
2.0
Ica rel - Relative Collector Current
ICEO - Collector Dark Current (nA)
104
3
10
VCE = 10 V
102
101
10
20
94 8249
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Rev. 1.6, 03-May-13
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Document Number: 81505
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV11F
www.vishay.com
CCBO - Collector Base Capacitance (pF)
Vishay Semiconductors
10
1
VCE = 5 V
λ = 950 nm
0.1
0.01
0.01
0.1
Ee - Irradiance (mW/cm²)
94 8244
Ica - Collector Light Current (mA)
100
λ = 950 nm
Ee = 1 mW/cm
2
0.5 mW/cm2
2
0.2 mW/cm
0.1 mW/cm2
1
0.05 mW/cm2
0.02 mW/cm2
0.1
0.1
1
100
10
VCE - Collector Emitter Voltage (V)
94 8245
0
1
100
10
VCB - Collector Base Voltage (V)
Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage
20
f = 1 MHz
16
12
8
4
0
0.1
1
100
10
VCE - Collector Ermitter Voltage (V)
Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage
ton/toff - Turn-on/Turn-off Time (µs)
VCE = 5 V
B - Amplification
4
12
600
400
200
0.1
1
10
IC - Collector Current (mA)
Fig. 6 - Amplification vs. Collector Current
Rev. 1.6, 03-May-13
8
0.1
800
94 8250
12
94 8247
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
0
0.01
f = 1 MHz
16
94 8246
Fig. 4 - Collector Light Current vs. Irradiance
10
20
10
1
CCEO - Collector Ermitter Capacitance (pF)
Ica - Collector Light Current (mA)
100
VCE = 5 V
RL = 100 Ω
λ = 950 nm
10
8
6
ton
4
0
100
94 8253
toff
2
0
4
8
12
16
IC - Collector Current (mA)
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
Document Number: 81505
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV11F
www.vishay.com
Vishay Semiconductors
10°
20°
30°
0.8
0.6
0.4
0.2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
1.0
Srel - Relative Sensitivity
S(λ)rel - Relative Spectral Sensitivity
0°
80°
0
800
900
0.2
0
94 8248
λ - Wavelength (nm)
94 8258
0.4
0.6
1100
1000
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
5.75
± 0.15
PACKAGE DIMENSIONS in millimeters
C
E
B
0.8
+ 0.2
- 0.1
Chip position
± 0.15
± 0.3
± 0.15
8.6
7.6
± 0.3
R
2.
45
(s
0.8
Area not plane
+ 0.2
- 0.1
0.5
+ 0.2
- 0.1
0.5
+ 0.15
1.5
± 0.25
0.8
+ 0.2
- 0.1
< 0.7
35
± 0.5
12.3
e)
er
ph
(4.55)
5
2.54 nom.
1.27 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5188.01-4
Issue:1; 01.07.96
96 12200
Rev. 1.6, 03-May-13
Document Number: 81505
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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