BPV22NF, BPV22NFL Datasheet

BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
94 8633
• Angle of half sensitivity: ϕ = ± 60°
• Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPV22NF is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 870 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV22NFL has long leads, other specifications like
BPV22NF.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
Ira (μA)
ϕ (deg)
λ0.5 (nm)
BPV22NF
85
± 60
790 to 1050
BPV22NFL
85
± 60
790 to 1050
PACKAGE FORM
COMPONENT
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
BPV22NF
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
BPV22NFL
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view, long leads
ORDERING CODE
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 1.9, 21-Feb-12
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Storage temperature range
Soldering temperature
SYMBOL
Document Number: 81509
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
PARAMETER
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
Forward voltage
Breakdown voltage
MIN.
TYP.
MAX.
UNIT
1
1.3
V
60
V
VR = 10 V, E = 0
Iro
2
VR= 0 V, f = 1 MHz, E = 0
CD
70
pF
VR= 12 V, f = 1 MHz
RS
400
Ω
Reverse dark current
Diode capacitance
SYMBOL
Serial resistance
mW/cm2,
λ = 950 nm
30
nA
Open circuit voltage
Ee = 1
Vo
370
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
80
μA
Reverse light current
Ee
= 1 mW/cm2, λ = 870 nm,
85
μA
Temperature coefficient of Ira
Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
TKIra
0.1
%/K
VR = 5 V, λ = 870 nm
s(λ)
0.57
A/W
VR = 5 V, λ = 950 nm
s(λ)
0.6
A/W
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
940
nm
λ0.5
790 to 1050
nm
η
90
%
VR = 5 V
Absolute spectral sensitivity
Range of spectral bandwidth
λ = 950 nm
Quantum efficiency
55
Ira
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
Detectivity
VR = 10 V, λ = 950 nm
D*
6 x 1012
cm√Hz/W
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
100
ns
VR = 12 V, RL = 1 kΩ, λ = 870 nm
fc
4
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
fc
1
MHz
Cut-off frequency
4x
10-14
W/√ Hz
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.9, 21-Feb-12
1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81509
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
1.2
S(λ)rel - Relative Spectral Sensivity
I ra - Reverse Light Current (µA)
1000
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
0.8
0.6
0.4
0.2
0.0
750
10
1
850
Fig. 3 - Reverse Light Current vs. Irradiance
950
1050
1150
λ - Wavelength (nm)
94 8426
E e - Irradiance (mW/cm2)
94 8411
1.0
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
10 °
20 °
30°
0.5 mW/cm2
λ = 950 nm
2
0.2 mW/cm
10
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.02 mW/cm2
1
0.1
1
10
100
VR - Reverse Voltage (V)
94 8412
ϕ - Angular Displacement
Srel - Relative Sensitivity
I ra - Reverse Light Current (µA)
1 mW/cm2
0.6
0.4
0.2
0
94 8413
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 21-Feb-12
Document Number: 81509
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV22NF, BPV22NFL
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: BPV22NF
5
± 0.15
3.2
± 0.2
(2.4)
± 0.2
± 0.3
6
R 2.25 (sphere)
18.8
± 0.5
8.6
± 0.3
< 0.7
2.5
4.5
+ 0.1
- 0.3
0.65
+ 0.1
- 0.2
0.1
3.4 +- 0.3
Area not plane
A
C
0.45
+ 0.2
- 0.1
0.4 + 0.15
2.54 nom.
1.1
technical drawings
according to DIN
specifications
± 0.2
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
PACKAGE DIMENSIONS in millimeters: BPV22NFL
5
3.2
± 0.2
(2.4)
4.5 ± 0.2
± 0.3
R 2.2
here
)
10.8
6
5 (sp
32.5
± 0.5
± 0.3
< 0.7
2.5
± 0.15
+ 0.1
- 0.3
0.75
- 0.12
0.1
3.4 +- 0.3
Area not plane
A
C
0.63
± 0.1
2.54 nom.
0.4
± 0.1
1.1 ± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5236.01-4
Issue: 2; 07.07.97
96 12205
Rev. 1.9, 21-Feb-12
Document Number: 81509
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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