BPV23F, BPV23FL Datasheet

BPV23F, BPV23FL
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 4.4
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
94 8633
• Angle of half sensitivity: ϕ = ± 60°
• Compliant to PoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPV23F is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 900 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV23FL has long leads, other specifications like BPV23F.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
Ira (μA)
ϕ (deg)
λ0.5 (nm)
BPV23F
63
± 60
870 to 1050
BPV23FL
63
± 60
870 to 1050
PACKAGE FORM
COMPONENT
ORDERING INFORMATION
PACKAGING
REMARKS
BPV23F
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view
BPV23FL
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view, long leads
ORDERING CODE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Rev. 1.8, 24-Aug-11
VALUE
VR
60
UNIT
V
PV
215
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Tstg
- 40 to + 100
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Storage temperature range
Soldering temperature
SYMBOL
Document Number: 81510
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV23F, BPV23FL
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
48
VR= 12 V, f = 1 MHz
RS
900
Ω
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
390
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
60
μA
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
63
μA
TKIra
0.2
%/K
VR = 5 V, λ = 870 nm
s(λ)
0.35
A/W
VR = 5 V, λ = 950 nm
s(λ)
0.6
A/W
Angle of half sensitivity
ϕ
± 60
deg
Wavelength of peak sensitivity
λp
950
nm
λ0.5
870 to 1050
nm
λ = 950 nm
η
90
%
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√ Hz
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Ee = 1
Temperature coefficient of Ira
Absolute spectral sensitivity
λ = 950 nm,
VR = 10 V
mW/cm2,
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
MIN.
TYP.
MAX.
UNIT
1
1.3
V
2
30
nA
60
V
45
pF
Detectivity
VR = 10 V, λ = 950 nm
D*
5 x 1012
cm√Hz/W
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
70
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
70
ns
VR = 12 V, RL = 1 kΩ, λ = 870 nm
fc
4
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
fc
1
MHz
Cut-off frequency
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.8, 24-Aug-11
1.4
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81510
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV23F, BPV23FL
www.vishay.com
Vishay Semiconductors
S (λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1
0.8
0.6
0.4
0.2
0
750
850
950
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
Srel - Relative Sensitivity
0.5 mW/cm2
10
10 °
20 °
30°
1 mW/cm2
λ = 950 nm
1150
1050
λ - Wavelength (nm)
94 8408
Fig. 3 - Reverse Light Current vs. Irradiance
Ira - Reverse Light Current (µA)
1.0
10
Ee - Irradiance (mW/cm2)
94 8424
1.2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
0.02 mW/cm2
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
1
0.1
94 8425
1
10
VR - Reverse Voltage (V)
100
0.6
0.4
0.2
0
94 8413
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
94 8423
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.8, 24-Aug-11
Document Number: 81510
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV23F, BPV23FL
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: BPV23F
5
± 0.15
3.2
± 0.2
(2.4)
± 0.2
± 0.3
6
R 2.25 (sphere)
18.8
± 0.5
8.6
± 0.3
< 0.7
2.5
4.5
+ 0.1
- 0.3
0.65
+ 0.1
- 0.2
0.1
3.4 +- 0.3
Area not plane
A
C
0.45
+ 0.2
- 0.1
0.4 + 0.15
2.54 nom.
1.1
technical drawings
according to DIN
specifications
± 0.2
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
PACKAGE DIMENSIONS in millimeters: BPV23FL
5
3.2
± 0.2
(2.4)
4.5 ± 0.2
± 0.3
R 2.2
here
)
10.8
6
5 (sp
32.5
± 0.5
± 0.3
< 0.7
2.5
± 0.15
+ 0.1
- 0.3
0.75
- 0.12
0.1
3.4 +- 0.3
Area not plane
A
C
0.63
± 0.1
2.54 nom.
0.4
± 0.1
1.1 ± 0.2
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5236.01-4
Issue: 2; 07.07.97
96 12205
Rev. 1.8, 24-Aug-11
Document Number: 81510
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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