BPW76A, BPW76B Datasheet

BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8401
• Angle of half sensitivity: ϕ = ± 40°
• Base terminal connected
• Hermetically sealed package
DESCRIPTION
• Flat glass window
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
Ica (mA)
ϕ (deg)
λ0.1 (nm)
BPW76A
0.4 to 0.8
± 40
450 to 1080
BPW76B
> 0.6
± 40
450 to 1080
PACKAGING
REMARKS
PACKAGE FORM
TO-18
TO-18
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW76A
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
BPW76B
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VALUE
UNIT
Collector base voltage
PARAMETER
TEST CONDITION
VCBO
80
V
Collector emitter voltage
VCEO
70
V
Emitter base voltage
VEBO
5
V
IC
50
mA
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Total power dissipation
Tamb ≤ 25 °C
PV
250
mW
Junction temperature
Operating temperature range
Thermal resistance junction/ambient
Thermal resistance junction/case
125
°C
- 40 to + 125
°C
°C
Tstg
- 40 to + 125
t≤5s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
400
K/W
RthJC
150
K/W
Storage temperature range
Soldering temperature
Tj
Tamb
Note
Tamb = 25 °C, unless otherwise specified
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For technical questions, contact: [email protected]
Document Number: 81526
Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
Ptot - Total Power Dissipation (mW)
800
600
RthJC
400
200
RthJA
0
0
25
50
75
125
100
150
Tamb - Ambient Temperature (°C)
94 8342
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
Collector emitter breakdown voltage
TYP.
MAX.
UNIT
1
100
nA
V
CCEO
6
pF
Angle of half sensitivity
ϕ
± 40
deg
Wavelength of peak sensitivity
λp
850
nm
λ0.1
450 to
1080
nm
Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA
VCEsat
0.15
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
6
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
5
µs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
110
kHz
Range of spectral bandwidth
Collector emitter saturation voltage
0.3
V
µs
Note
Tamb = 25 °C, unless otherwise specified
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
TEST CONDITION
PART
SYMBOL
MIN.
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW76A
Ica
0.4
BPW76B
Ica
0.6
TYP.
MAX.
0.8
UNIT
mA
mA
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
2.50
I ca rel - Relative Collector Current
I CEO - Collector Dark Current (nA)
10 6
10 5
10 4
10 3
10 2
V CE = 20 V
E=0
10 1
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
10 0
20
94 8343
VCE = 5V
E e = 1 mW/cm2
λ = 950 nm
2.25
50
100
150
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Document Number: 81526
Rev. 1.4, 08-Sep-08
0
94 8344
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
For technical questions, contact: [email protected]
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399
BPW76A, BPW76B
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
12
ton/toff - Turn-on/Turn-off Time (µs)
Ica - Collector Light Current (mA)
10
1
0.1
VCE = 5 V
λ = 950 nm
0.01
0.001
0.01
1
Ee - Irradiance
94 8345
(mW/cm2)
mW/cm2
0.2 mW/cm2
0.1
0.1 mW/cm2
0.05 mW/cm2
1
10
0
4
V CE - Collector Emitter Voltage (V)
12
8
16
IC - Collector Current (mA)
1.0
0.8
0.6
0.4
0.2
0
100
400
600
800
1000
λ - Wavelength (nm)
94 8348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0°
20
10°
20°
30°
f = 1 MHz
16
Srel - Relative Sensitivity
CCEO - Collector Ermitter Capacitance (pF)
toff
2
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
S (λ)rel - Relative Spectral Sensitivity
Ica - Collector Light Current (mA)
0.5
94 8346
ton
4
94 8253
E e = 1 mW/cm2
BPW76A
λ = 950 nm
0.01
0.1
6
10
Fig. 4 - Collector Light Current vs. Irradiance
1
8
0
0.1
VCE = 5 V
RL = 100 Ω
λ = 950 nm
10
12
8
4
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0.1
94 8247
1
10
100
VCE - Collector Ermitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
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400
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8347
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
For technical questions, contact: [email protected]
Document Number: 81526
Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
± 0.15
PACKAGE DIMENSIONS in millimeters
5.5
2.54 nom.
B
E
+ 0.05
- 0.1
5.2
± 0.25
Ø 4.7
C
13.2
± 0.7
(2.5)
Chip position
0.45
+ 0.02
- 0.05
3.9
Lens
± 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.503-5004.01-4
Issue:1; 01.07.96
96 12175
Document Number: 81526
Rev. 1.4, 08-Sep-08
For technical questions, contact: [email protected]
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401
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Revision: 02-Oct-12
1
Document Number: 91000
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