BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 8401 • Angle of half sensitivity: ϕ = ± 10° • Base terminal connected DESCRIPTION • Hermetically sealed package BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) BPW77NA 7.5 to 15 ± 10 450 to 1080 BPW77NB > 10 ± 10 450 to 1080 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW77NA Bulk MOQ: 1000 pcs, 1000 pcs/bulk BPW77NB Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector base voltage TEST CONDITION VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V IC 50 mA Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Total power dissipation Tamb ≤ 25 °C PV 250 mW Tj 125 °C Operating temperature range Tamb - 40 to + 125 °C Storage temperature range Tstg - 40 to + 125 °C Tsd 260 °C RthJA 400 K/W RthJC 150 K/W Junction temperature t≤5s Soldering temperature Thermal resistance junction/ambient Thermal resistance junction/gase Connected with Cu wire, 0.14 mm2 Note Tamb = 25 °C, unless otherwise specified www.vishay.com 402 For technical questions, contact: [email protected] Document Number: 81527 Rev. 1.5, 08-Sep-08 BPW77NA, BPW77NB Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors Ptot - Total Power Dissipation (mW) 800 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) 94 8342 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 6 pF ϕ ± 10 deg Collector emitter breakdown voltage Angle of half sensitivity Ee = 1 Collector emitter saturation voltage λ = 950 nm, IC = 1 mA mW/cm2, MAX. UNIT 1 100 nA V λp 850 nm λ0.1 450 to 1080 nm VCEsat 0.15 Wavelength of peak sensitivity Range of spectral bandwidth TYP. 0.3 V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz µs Note Tamb = 25 °C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION Ee = 1 Collector light current PART λ = 950 nm, BPW77NA VCE = 5 V BPW77NB mW/cm2, SYMBOL MIN. Ica 7.5 Ica 10 TYP. MAX. 15 UNIT mA mA BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 2.50 I ca rel - Relative Collector Current I CEO - Collector Dark Current (nA) 10 6 10 5 10 4 10 3 10 2 V CE = 20 V E=0 10 1 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 10 0 20 94 8343 VCE = 5V E e = 1 mW/cm2 λ = 950 nm 2.25 50 100 150 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81527 Rev. 1.5, 08-Sep-08 0 94 8344 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 403 BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 12 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 100 BPW77NB 10 BPW77NA 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.01 0.1 Ee - Irradiance (mW/cm2) 94 8349 8 6 ton 4 toff 2 0 10 1 VCE = 5 V RL = 100 Ω λ = 950 nm 10 0 4 Fig. 4 - Collector Light Current vs. Irradiance 12 8 16 IC - Collector Current (mA) 94 8253 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current Ica - Collector Light Current (mA) λ = 950 nm S (λ)rel - Relative Spectral Sensitivity 10 Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 1 0.1 mW/cm2 0.05 mW/cm2 0.02 0.1 0.1 1 mW/cm2 10 0.6 0.4 0.2 0 400 600 0° 10° 20° 30° Srel - Relative Sensitivity f = 1 MHz 16 12 8 4 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0.1 1 10 100 VCE - Collector Ermitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.com 404 1000 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 20 94 8247 800 λ - Wavelength (nm) 94 8348 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage CCEO - Collector Ermitter Capacitance (pF) 0.8 100 V CE - Collector Emitter Voltage (V) 94 8350 1.0 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8351 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81527 Rev. 1.5, 08-Sep-08 BPW77NA, BPW77NB Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5.5 ± 0.15 2.54 nom. B E ± 0.25 + 0.02 - 0.07 6.15 Ø 4.69 C 13.2 ± 0.7 (2.5) Chip position 0.45 + 0.02 - 0.05 technical drawings according to DIN specifications 4 ± 0.05 Lens Drawing-No.: 6.503-5023.01-4 Issue:1; 01.07.96 96 12180 Document Number: 81527 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 405 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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