BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters 94 8480 • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS DESCRIPTION • High speed detector for infrared radiation BPW82 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (µA) ϕ (deg) λ0.5 (nm) 45 ± 65 790 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view COMPONENT BPW82 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW82 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 406 For technical questions, contact: [email protected] Document Number: 81529 Rev. 1.6, 08-Sep-08 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 TYP. MAX. UNIT VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 Reverse dark current Diode capacitance V pF VR = 3 V, f = 1 MHz, E = 0 CD 25 Open circuit voltage Ee = 1 mW/cm2, λ = 870 nm Vo 350 mV Short circuit current Ee = 1 mW/cm2, λ = 870 nm Ik 38 µA Reverse light current Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira 45 µA 43 40 pF Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 950 nm λ0.5 790 to 1050 nm VR = 10 V, λ = 870 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Document Number: 81529 Rev. 1.6, 08-Sep-08 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 407 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 1.2 S(λ)rel - Relative Spectral Sensivity 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 0.6 0.4 0.2 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 0° 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 Srel - Relative Radiant Sensitivity I ra - Reverse Light Current (µA) 10° 20° 30° mW/cm2 0.5 mW/cm2 λ = 950 nm 1150 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 1 1050 λ - Wavelength (nm) 94 8426 E e - Irradiance (mW/cm²) 94 8414 0.8 0.0 750 10 1 1.0 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 1 0.1 94 8415 1 10 100 V R - Reverse Voltage (V) 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 408 For technical questions, contact: [email protected] Document Number: 81529 Rev. 1.6, 08-Sep-08 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters ± 0.2 4 ± 0.2 5 A C 6.8 (2.8) < 0.5 ± 0.3 Chip position (2.05) 19.8 - 0.8 8.9 ± 0.3 Sensitive area Area not plane < 0.65 0.45 + 0.01 - 0.05 2.5 nom. 2.3 0.4 ± 0.2 + 0.1 - 0.05 Drawing-No.: 6.544-5108.01-4 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12195 Document Number: 81529 Rev. 1.6, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 409 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000