BPW85, BPW85A, BPW85B, BPW85C Datasheet

BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 25°
20815
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
Ica (mA)
ϕ (deg)
λ0.1 (nm)
BPW85
0.8 to 8
± 25
450 to 1080
BPW85A
0.8 to 2.5
± 25
450 to 1080
BPW85B
1.5 to 4
± 25
450 to 1080
BPW85C
3 to 8
± 25
450 to 1080
PACKAGE FORM
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
BPW85
ORDERING CODE
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
BPW85A
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
BPW85B
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
BPW85C
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector emitter voltage
TEST CONDITION
VCEO
70
V
Emitter collector voltage
VECO
5
V
Collector current
Collector peak current
Power dissipation
IC
50
mA
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Tamb ≤ 55 °C
PV
100
mW
Tj
100
°C
Tamb
-40 to +100
°C
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 2.1, 04-Aug-14
UNIT
Tstg
-40 to +100
t ≤ 3 s, 2 mm from case
Tsd
260
°C
Connected with Cu wire Ø 0.14 mm2
RthJA
450
K/W
Document Number: 81531
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
125
100
75
RthJA = 450 K/W
50
25
0
0
94 8308
20
40
60
100
80
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3
pF
ϕ
± 25
deg
Collector emitter breakdown voltage
Angle of half sensitivity
TYP.
MAX.
UNIT
1
200
nA
V
Wavelength of peak sensitivity
λp
850
nm
Range of spectral bandwidth
λ0.1
450 to 1080
nm
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VCEsat
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
2.3
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
180
kHz
Collector emitter saturation voltage
Turn-on time
0.3
2.0
V
μs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
Rev. 2.1, 04-Aug-14
TEST CONDITION
Ee = 1
λ = 950 nm,
VCE = 5 V
mW/cm2,
PART
SYMBOL
MIN.
MAX.
UNIT
BPW85
Ica
0.8
TYP.
8.0
mA
BPW85A
Ica
0.8
2.5
mA
BPW85B
Ica
1.5
4.0
mA
BPW85C
Ica
3.0
8.0
mA
Document Number: 81531
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
Ica - Collector Light Current (mA)
ICEO - Collector Dark Current (nA)
104
103
VCE = 20 V
102
101
10
20
40
60
80
0.2 mW/cm2
0.1 mW/cm2
0.1
94 8275
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
1
10
VCE - Collector Emitter Voltage (V)
10
Ica - Collector Light Current (mA)
Ica rel - Relative Collector Current
0.05 mW/cm2
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
2.0
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Ica - Collector Light Current (mA)
BPW85C
BPW85A
0.1
VCE = 5 V
λ = 950 nm
0.1
1
Ee - Irradiance (mW/cm2)
Fig. 4 - Collector Light Current vs. Irradiance
Rev. 2.1, 04-Aug-14
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1
λ = 950 nm
1
10
VCE - Collector Emitter Voltage (V)
100
10
BPW85B
94 8271
1
Fig. 6 - Collector Light Current vs. Collector Emitter Voltage
10
0.01
0.01
Ee = 1 mW/cm2
0.5 mW/cm2
94 8276
Fig. 3 - Relative Collector Current vs. Ambient Temperature
1
BPW 85 B
0.01
0.1
0.6
Ica - Collector Light Current (mA)
E e = 1 mW/cm2
0.5 mW/cm2
1
0.01
0.1
100
Tamb - Ambient Temperature (°C)
94 8304
BPW 85 A
= 950 nm
λ
10
E e = 1 mW/cm2
0.5 mW/cm2
1
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.1
0.01
0.1
94 8277
BPW 85 C
λ = 950 nm
100
1
10
VCE - Collector Emitter Voltage (V)
Fig. 7 - Collector Light Current vs. Collector Emitter Voltage
Document Number: 81531
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
Vishay Semiconductors
10
S (λ)rel - Relative Spectral Sensitivity
f = 1 MHz
8
6
4
2
0
0.1
1
0.8
0.6
0.4
0.2
0
400
100
10
600
1000
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Collector Emitter Capacitance vs.
Collector Emitter Voltage
0°
8
10°
20°
30°
Srel - Relative Radiant Sensitivity
ton/toff - Turn-on/Turn-off Time (µs)
800
λ - Wavelength (nm)
94 8348
VCE - Collector Emitter Voltage (V)
94 8294
1.0
VCE = 5 V
RL = 100 Ω
λ = 950 nm
6
4
toff
2
ton
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
CCEO - Collector Emitter Capacitance (pF)
www.vishay.com
80°
0
0
94 8293
2
4
6
8
10
12
14
IC - Collector Current (mA)
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
Rev. 2.1, 04-Aug-14
0.6
0.4
0.2
0
94 8295
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
Document Number: 81531
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Ø 3.2 ± 0.15
PACKAGE DIMENSIONS in millimeters
E
C
(2.5)
3.4 ± 0.1
5
.4
< 0.6
R1
(p
34.4 ± 0.5
AREA NOT PLANE
+ 0.2
2.54 nom.
Drawing-No.: 6.544-5054.01-4
Issue: 5; 28.07.14
1.5 ± 0:5
1.05 ± 0.1
0.5 - 0.1
Rev. 2.1, 04-Aug-14
)
re
he
7 ± 0.3
4.4 ± 0.1
Ø 3 ± 0.1
0.4 ± 0.05
technical drawings
according to DIN
specifications
Document Number: 81531
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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