BPW96B, BPW96C Datasheet

BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94 8391
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
Ica (mA)
ϕ (deg)
λ0.1 (nm)
BPW96B
2.5 to 7.5
± 20
450 to 1080
BPW96C
4.5 to 15
± 20
450 to 1080
PACKAGING
REMARKS
PACKAGE FORM
BPW96B
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
BPW96C
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
COMPONENT
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Collector emitter voltage
PARAMETER
TEST CONDITION
VCEO
70
V
Emitter collector voltage
VECO
5
V
Collector current
UNIT
IC
50
mA
tp/T ≤ 0.5, tp ≤ 10 ms
ICM
100
mA
Tamb ≤ 47 °C
PV
150
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t≤3s
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Collector peak current
Power dissipation
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.8, 23-Aug-11
Document Number: 81532
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
200
160
120
RthJA
80
40
0
0
94 8300
20
40
60
80
Tamb - Ambient Temperature (°C)
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
MIN.
IC = 1 mA
V(BR)CEO
70
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3
pF
ϕ
± 20
deg
PARAMETER
Collector emitter breakdown voltage
Angle of half sensitivity
TYP.
MAX.
UNIT
1
200
nA
V
Wavelength of peak sensitivity
λp
850
nm
Range of spectral bandwidth
λ0.1
450 to 1080
nm
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA
VCEsat
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
2.3
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
180
kHz
Collector emitter saturation voltage
0.3
2.0
V
μs
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
Rev. 1.8, 23-Aug-11
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW96B
Ica
2.5
4.5
7.5
mA
BPW96C
Ica
4.5
8
15
mA
Document Number: 81532
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ica - Collector Light Current (mA)
10
103
VCE = 20 V
102
101
10
20
40
60
Ica rel - Relative Collector Current
2.0
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 8239
1
100
10
V CE - Collector Emitter Voltage (V)
10
8
f = 1 MHz
6
4
2
0
0.1
1
100
10
V CE - Collector Emitter Voltage (V)
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
ton/toff - Turn-on/Turn-off Time (µs)
Ica - Collector Light Current (mA)
λ = 950 nm
8
BPW96B
BPW96C
1
0.1
V CE = 5 V
λ = 950 nm
VCE = 5 V
RL = 100 Ω
λ = 950 nm
6
4
toff
2
ton
0
0.1
1
10
Ee - Irradiance (mW/cm2)
Fig. 3 - Collector Light Current vs. Irradiance
Rev. 1.8, 23-Aug-11
0.05 mW/cm²
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
10
94 8296
0.1 mW/cm²
94 8301
Fig. 2 - Relative Collector Current vs. Ambient Temperature
0.01
0.01
0.2 mW/cm²
1
94 8297
Fig. 1 - Collector Dark Current vs. Ambient Temperature
1.6
0.5 mW/cm²
0.1
0.1
100
80
Tamb - Ambient Temperature (°C)
94 8304
Ee = 1 mW/cm²
BPW96B
C CEO - Collector Emitter Capacitance (pF)
ICEO - Collector Dark Current (nA)
104
0
94 8293
2
4
6
8
10
12
14
IC - Collector Current (mA)
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Document Number: 81532
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
10°
20°
0.8
0.6
0.4
0.2
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
30°
1.0
Srel - Relative Radiant Sensitivity
S (λ)rel - Relative Spectral Sensitivity
0°
80°
0
400
600
800
1000
0.6
λ - Wavelength (nm)
94 8348
0.4
0.2
0
94 8299
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
5.75
± 0.15
PACKAGE DIMENSIONS in millimeters
C
E
Chip position
± 0.15
(4.8)
Ø5
± 0.15
7.6
± 0.3
2.4
0.8
Area not plane
+ 0.2
- 0.1
0.5
1.5
± 0.25
1
+ 0.2
- 0.1
< 0.7
35.3
± 0.5
8.6
± 0.3
R
12.3
re)
he
sp
5(
0.63
+ 0.15
+ 0.2
- 0.1
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5086.01-4
Issue:1; 01.07.96
96 12192
Rev. 1.8, 23-Aug-11
Document Number: 81532
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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