BPW96B, BPW96C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8391 • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION BPW96 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY Ica (mA) ϕ (deg) λ0.1 (nm) BPW96B 2.5 to 7.5 ± 20 450 to 1080 BPW96C 4.5 to 15 ± 20 450 to 1080 PACKAGING REMARKS PACKAGE FORM BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ COMPONENT Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 70 V Emitter collector voltage VECO 5 V Collector current UNIT IC 50 mA tp/T ≤ 0.5, tp ≤ 10 ms ICM 100 mA Tamb ≤ 47 °C PV 150 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤3s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Collector peak current Power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 23-Aug-11 Document Number: 81532 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 Collector emitter dark current VCE = 20 V, E = 0 ICEO Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF ϕ ± 20 deg PARAMETER Collector emitter breakdown voltage Angle of half sensitivity TYP. MAX. UNIT 1 200 nA V Wavelength of peak sensitivity λp 850 nm Range of spectral bandwidth λ0.1 450 to 1080 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz Collector emitter saturation voltage 0.3 2.0 V μs TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current Rev. 1.8, 23-Aug-11 TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V BPW96B Ica 2.5 4.5 7.5 mA BPW96C Ica 4.5 8 15 mA Document Number: 81532 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 20 40 60 Ica rel - Relative Collector Current 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 1 100 10 V CE - Collector Emitter Voltage (V) 10 8 f = 1 MHz 6 4 2 0 0.1 1 100 10 V CE - Collector Emitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) λ = 950 nm 8 BPW96B BPW96C 1 0.1 V CE = 5 V λ = 950 nm VCE = 5 V RL = 100 Ω λ = 950 nm 6 4 toff 2 ton 0 0.1 1 10 Ee - Irradiance (mW/cm2) Fig. 3 - Collector Light Current vs. Irradiance Rev. 1.8, 23-Aug-11 0.05 mW/cm² Fig. 4 - Collector Light Current vs. Collector Emitter Voltage 10 94 8296 0.1 mW/cm² 94 8301 Fig. 2 - Relative Collector Current vs. Ambient Temperature 0.01 0.01 0.2 mW/cm² 1 94 8297 Fig. 1 - Collector Dark Current vs. Ambient Temperature 1.6 0.5 mW/cm² 0.1 0.1 100 80 Tamb - Ambient Temperature (°C) 94 8304 Ee = 1 mW/cm² BPW96B C CEO - Collector Emitter Capacitance (pF) ICEO - Collector Dark Current (nA) 104 0 94 8293 2 4 6 8 10 12 14 IC - Collector Current (mA) Fig. 6 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81532 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW96B, BPW96C www.vishay.com Vishay Semiconductors 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1.0 Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 1000 0.6 λ - Wavelength (nm) 94 8348 0.4 0.2 0 94 8299 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C E Chip position ± 0.15 (4.8) Ø5 ± 0.15 7.6 ± 0.3 2.4 0.8 Area not plane + 0.2 - 0.1 0.5 1.5 ± 0.25 1 + 0.2 - 0.1 < 0.7 35.3 ± 0.5 8.6 ± 0.3 R 12.3 re) he sp 5( 0.63 + 0.15 + 0.2 - 0.1 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5086.01-4 Issue:1; 01.07.96 96 12192 Rev. 1.8, 23-Aug-11 Document Number: 81532 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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