VEMT2503X01, VEMT2523X01 Datasheet

VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
VEMT2503X01
VEMT2523X01
• Angle of half sensitivity:  = ± 35°
• Package matched with IR emitter series
VSMB2943RGX01 and VSMB2943GX01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VEMT2503X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
Ica (mA)
 (deg)
0.1 (nm)
VEMT2503X01
2.7
± 35
470 to 1090
VEMT2523X01
2.7
± 35
470 to 1090
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMT2503X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VEMT2523X01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
Rev. 1.0, 08-Apr-13
Document Number: 84168
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
UNIT
Collector emitter voltage
PARAMETER
TEST CONDITION
VCEO
20
V
Emitter collector voltage
VECO
7
V
IC
50
mA
PV
100
mW
Tj
100
°C
Tamb
- 40 to + 100
°C
°C
Collector current
Tamb  75 °C
Power power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tstg
- 40 to + 100
Acc. reflow profile fig. 8
Tsd
260
°C
Acc. J-STD-051
RthJA
250
K/W
Thermal resistance junction/ambient
PV - Power Dissipation (mW)
120
100
80
60
RthJA = 250 K/W
40
20
0
0
21619
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
















Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
TEST CONDITION
SYMBOL
MIN.
IC = 0.1 mA
VCEO
20
TYP.
UNIT
V
VCE = 5 V, E = 0
ICEO
1
VCE = 0 V, f = 1 MHz, E = 0
CCEO
25
Ee = 1 mW/cm2,  = 950 nm,
VCE = 5 V
Ica
1.3
MAX.
2.7
100
nA
pF
4.1
mA
Angle of half sensitivity

± 35
Wavelength of peak sensitivity
p
850
nm
Range of spectral bandwidth
0.1
470 to 1090
nm
Collector emitter saturation voltage
Temperature coefficient of Ica
Rev. 1.0, 08-Apr-13
IC = 0.05 mA
VCEsat
Ee = 1 mW/cm2,  = 950 nm,
VCE = 5 V
TkIca
deg
0.4
1.1
V
%/K
Document Number: 84168
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
S (λ)rel - Relative Spectral Sensitivity
IF = 0
1000
VCE = 70 V
VCE = 25 V
VCE = 5 V
100
10
1
0
10
20
20594
30
40
50
60
70
80
1.0
0.8
0.6
0.4
0.2
0
90 100
Tamb - Ambient Temperature (°C)
400
500
600
Fig. 2 - Collector Dark Current vs. Ambient Temperature
700
0°
Srel - Relative Radiant Sensitivity
10
VCE = 5 V,
λ = 950 nm
1
0.1
0.01
0.1
1
900
1000 1100
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
100
Ica - Collector Light Current (mA)
800
λ - Wavelength (nm)
21555
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
ϕ - Angular Displacement
ICE0 - Collector Dark Current (nA)
10 000
80°
10
0.7 0.6
0.4
0.2
0
Ee - Irradiance (mW/cm²)
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
tr/tf - Rise/Fall Time (µs)
80
RL = 100 Ω
70
60
50
40
tf
30
tr
20
10
0
0
20599
250
500 750 1000 1250 1500 1750 2000
IC - Collector Current (µA)
Fig. 4 - Rise/Fall Time vs. Collector Current
Rev. 1.0, 08-Apr-13
Ica rel - Relative Collector Current
2.0
90
1.8
VCE = 5 V
Ee = 1 mW/cm2
λ = 950 nm
1.6
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Collector Current vs. Ambient Temperature
Document Number: 84168
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
DRYPACK
300
255 °C
240 °C
217 °C
250
Temperature (°C)
max. 260 °C
245 °C
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label: 
Floor life: 4 weeks 
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS VEMT2503X01 in millimeters
Rev. 1.0, 08-Apr-13
Document Number: 84168
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS VEMT2523X01 in millimeters
Rev. 1.0, 08-Apr-13
Document Number: 84168
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
TAPE AND REEL DIMENSIONS VEMT2503X01 in millimeters
Rev. 1.0, 08-Apr-13
Document Number: 84168
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
TAPE AND REEL DIMENSIONS VEMT2523X01 in millimeters
Rev. 1.0, 08-Apr-13
Document Number: 84168
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000