ZTX652

ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX652
ZTX653
ISSUE 2 – JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX652
SYMBOL
MIN. TYP.
Transition
Frequency
fT
Switching Times
ton
toff
140
ZTX653
MAX. MIN. TYP.
175
140
UNIT CONDITIONS.
MAX.
175
MHz
IC=100mA, VCE=5V
f=100MHz
80
80
ns
1200
1200
ns
IC=500mA, VCC=10V
IB1=IB2=50mA
30
Output Capacitance Cobo
30
pF
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
SYMBOL
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
2.0
C
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
0.001
0.01
0.1
1
10
ZTX653
UNIT
V
Collector-Base Voltage
VCBO
100
120
VCEO
80
100
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
6
A
Continuous Collector Current
IC
2
A
1
5.7
W
mW/°C
-55 to +200
°C
at Tamb=25°C
derate above 25°C
Ptot
Tj:Tstg
V
ZTX652
ZTX653
PARAMETER
SYMBOL
Collector-Base
Breakdown
Voltage
V(BR)CBO
100
120
V
IC=100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO
80
100
V
IC=10mA*
Emitter-Base
Breakdown
Voltage
V(BR)EBO
5
5
V
IE=100µA
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=80V
VCB=100V
VCB=80V,Tamb=100°C
VCB=100V,Tamb=100°C
0.1
µA
VEB=4V
MIN. TYP.
MAX. MIN. TYP.
0.1
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
Emitter Cut-Off
Current
10
IEBO
MAX.
0.1
100
T -Temperature (°C)
3-223
ZTX652
Collector-Emitter Voltage
Single Pulse
0
0.0001
E-Line
TO92 Compatible
Operating and Storage Temperature Range
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
E
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
1.5
C
B
Power Dissipation
PARAMETER
ZTX652
ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
0.1
UNIT CONDITIONS.
Collector-Emitter
VCE(sat)
Saturation Voltage
0.13
0.23
0.3
0.5
0.13
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
VBE(sat)
Saturation Voltage
0.9
1.25
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1
0.8
1
V
IC=1A, VCE=2V*
VBE(on)
3-222
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX652
ZTX653
ISSUE 2 – JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
ZTX652
SYMBOL
MIN. TYP.
Transition
Frequency
fT
Switching Times
ton
toff
140
ZTX653
MAX. MIN. TYP.
175
140
UNIT CONDITIONS.
MAX.
175
MHz
IC=100mA, VCE=5V
f=100MHz
80
80
ns
1200
1200
ns
IC=500mA, VCC=10V
IB1=IB2=50mA
30
Output Capacitance Cobo
30
pF
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
SYMBOL
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
2.0
C
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
0.001
0.01
0.1
1
10
ZTX653
UNIT
V
Collector-Base Voltage
VCBO
100
120
VCEO
80
100
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
6
A
Continuous Collector Current
IC
2
A
1
5.7
W
mW/°C
-55 to +200
°C
at Tamb=25°C
derate above 25°C
Ptot
Tj:Tstg
V
ZTX652
ZTX653
PARAMETER
SYMBOL
Collector-Base
Breakdown
Voltage
V(BR)CBO
100
120
V
IC=100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO
80
100
V
IC=10mA*
Emitter-Base
Breakdown
Voltage
V(BR)EBO
5
5
V
IE=100µA
Collector Cut-Off
Current
ICBO
10
µA
µA
µA
µA
VCB=80V
VCB=100V
VCB=80V,Tamb=100°C
VCB=100V,Tamb=100°C
0.1
µA
VEB=4V
MIN. TYP.
MAX. MIN. TYP.
0.1
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
Emitter Cut-Off
Current
10
IEBO
MAX.
0.1
100
T -Temperature (°C)
3-223
ZTX652
Collector-Emitter Voltage
Single Pulse
0
0.0001
E-Line
TO92 Compatible
Operating and Storage Temperature Range
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
E
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
1.5
C
B
Power Dissipation
PARAMETER
ZTX652
ZTX653
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
0.1
UNIT CONDITIONS.
Collector-Emitter
VCE(sat)
Saturation Voltage
0.13
0.23
0.3
0.5
0.13
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
VBE(sat)
Saturation Voltage
0.9
1.25
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1
0.8
1
V
IC=1A, VCE=2V*
VBE(on)
3-222
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX652
ZTX653
TYPICAL CHARACTERISTICS
0.6
0.5
IC/IB=10
hFE - Gain
VCE(sat) - (Volts)
225
0.4
0.3
0.2
175
VCE=2V
125
0.1
75
0
0.0001
0.001
0.01
0.1
1
25
10
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
10
1.4
1.0
1.0
VBE - (Volts)
VBE(sat) - (Volts)
1.2
1.2
IC/IB=10
0.8
VCE=2V
0.8
0.6
0.6
0.4
0.001
0.0001
0.1
1
10
0.0001
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
td
tr
tf
ns
280
Switching time
1
0.1
0.001
10
Single Pulse Test at Tamb=25°C
10
IC - Collector Current (Amps)
0.01
D.C.
1s
100ms
10ms
1.0ms
100µs
240
2400
200
2000
160
1600
120
1200
80
800
40
400
0
ZTX652
ZTX653
0.01
0.1
1
10
IB1=IB2=IC/10
ts
ns
2800
0
0.01
ts
tf
td
tr
0.1
100
VCE - Collector Voltage (Volts)
IC - Collector Current (Amps)
Safe Operating Area
Switching Speeds
3-224
1