ZXTN19020CFF

ZXTN19020CFF
20V NPN HIGH GAIN POWER TRANSISTOR IN SOT23F
Features
Mechanical Data
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BVCEO > 20V
BVCEX > 65V
BVECO > 4.5V
IC = 7A Continuous Collector Current
Very Low VCE(SAT) < 30mV @ 1A
RCE(SAT) = 18mΩ
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1.5W Power Dissipation
High Forward Blocking Voltage
High Gain
Complementary PNP Type: ZXTP19020CFF
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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
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Case: SOT23F
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.012 grams (Approximate)
Applications
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Description
MOSFET and IGBT Gate Driving
LED Driving
Strobe Flash
Motor Drive
Micro Buffers
Advanced process capability has been used to maximize the
performance of this transistor. The SOT23F package is compatible
with the industry standard SOT23 footprint but offers lower profile and
higher dissipation for applications where power density is of utmost
importance.
SOT23F
C
E
C
B
B
E
Device Symbol
Top View
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
ZXTN19020CFFTA
Notes:
Compliance
AEC-Q101
Marking
1E2
Reel Size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1E2
ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
YW
SOT23F
1E2 = Product Type Marking Code
YW = Date Code Marking
Y = Year : 0~9
W = Week : A~Z : 1~26
a~z : 27~52
z represents 52 & 53 week
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage (Base Open)
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
ICM
IB
Value
65
65
20
4.5
7
7
15
1
Unit
V
V
V
V
V
A
A
A
Value
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
149
93
83
60
43.8
-55 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
PD
(Note 7)
(Note 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
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Thermal Characteristics and Derating Information
50mmx50mm FR-4, 2oz Cu
IC Collector Current (A)
IC Collector Current (A)
1m
VCE(sat)
10 Limited
1
DC
Failure may occur
in this region
µ
100μ
1s
100ms
100m
10ms
Single Pulse
o
T amb=25 C
1ms
100s
10m
100m
1
BV(BR)CEO=20V
µ
10μ
µ
1μ
10
0
VCE Collector-Emitter Voltage (V)
40
60
Safe Operating Area
80
o
70
60
Tamb=25 C
Maximum Power (W)
o
Thermal Resistance ( C/W)
20
VCE Collector-Emitter Voltage (V)
Safe Operating Area
50mmx50mm
FR-4, 2oz Cu
50 D=0.5
40
30
D=0.2
Single Pulse
20
D=0.05
10
0
100μ
µ
D=0.1
1m
10m 100m
1
10
100
1k
100
Single Pulse
o
Tamb=25 C,
50mmx50mm
FR-4, 2oz Cu
10
1
100μ
µ
Pulse Width (s)
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
BV(BR)CEX=65V
o
T amb=25 C
Pulse Power Dissipation
1.6
1.4
50mmx50mm FR-4,
2oz Cu
1.2
1.0
25mmx25mm FR-4,
2oz Cu
0.8
0.6
0.4
0.2
0.0
0
15mmx15mm FR-4,
1oz Cu
20
40
60
80
100 120 140 160
o
Temperature ( C)
Derating Curve
ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Forward
Blocking
Collector-Emitter Breakdown Voltage
(Base Open) (Note 11)
Emitter-Base Breakdown Voltage
Emitter – Collector Breakdown Voltage (Reverse
Blocking)
Emitter – Collector Breakdown Voltage (Base
Open)
Symbol
Min
Typ
Max
Unit
BVCBO
65
85
—
V
BVCEX
65
85
—
V
BVCEO
20
25
—
V
IC = 10mA
BVEBO
7
8.3
—
V
BVECX
6
8.2
—
V
IE = 100µA
IE = 100µA, RBC < 1kΩ,
or VBC = ±0.25V
BVECO
4.5
5.3
—
V
IE = 100µA
Collector-Base Cut-off Current
ICBO
—
<1
—
50
20
nA
µA
Collector-Base Cut-off Current
ICEX
—
<1
100
Emitter-Base Cut-off Current
ON CHARACTERISTICS (Note 11)
IEBO
—
<1
50
VCB = 50V
VCB = 50V, TA = +100°C
VCE = 50V, RBE < 1kΩ or
-1V < VBE < 0.25V
VEB = 5.6V
hFE
200
180
100
45
350
340
220
95
500
—
—
30
65
70
175
mV
Static Forward Current Transfer Ratio
nA
—
—
Collector-Emitter Saturation Voltage
VCE(SAT)
—
23
45
55
135
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
VBE(SAT)
VBE(ON)
—
—
960
840
1050
950
mV
mV
Transition Frequency
fT
—
150
—
MHz
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
COBO
tD
tR
tS
tF
—
—
—
—
—
—
315
40
135
117
285
88
—
50
—
—
—
—
pF
pF
ns
ns
ns
ns
Note:
Test Condition
IC = 100µA
IC = 100µA, RBE < 1kΩ,
or -1V < VBE < 0.25V
IC = 0.1A, VCE = 2V
IC = 2A, VCE = 2V
IC = 7A, VCE = 2V
IC = 15A, VCE = 2V
IC = 1A, IB = 100mA
IC = 1A, IB = 10mA
IC = 2A, IB = 40mA
IC = 7A, IB = 280mA
IC = 7A, IB = 280mA
IC = 7A, VCE = 2V
IC = 50mA, VCE = 10V,
f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCC = 10V,
IC = 1A,
IB1 = - IB2 = 10mA
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
o
IC/IB=10
0.4
IC/IB=100
100m
VCE(SAT) (V)
VCE(SAT) (V)
Tamb=25 C
IC/IB=50
10m
IC/IB=25
o
150 C
0.3
o
100 C
0.2
0.1
o
25 C
IC/IB=10
10m
100m
1
VCE=2V
150 C
o
100 C
o
25 C
0.6
0.4
o
-55 C
0.2
0.0
1m
1.0
10
VCE(SAT) v IC
1.0
0.8
1
VCE(SAT) v IC
1.4
1.2
100m
IC Collector Current (A)
10m
100m
1
600
550
500
450
400
350
300
250
200
150
100
50
0
1.2
IC/IB=10
o
-55 C
VBE(SAT) (V)
Normalised Gain
10
IC Collector Current (A)
o
1.6
o
-55 C
0.0
10m
Typical Gain (h FE)
1m
1m
1.0
o
25 C
0.8
0.6
o
100 C
o
0.4
10
1m
150 C
10m
100m
1
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
VCE=2V
10
o
-55 C
o
VBE(ON) (V)
25 C
0.8
0.6
o
100 C
0.4
o
150 C
0.2
1m
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23F
D
c
b
SOT23F
Dim Min
Max
Typ
A
0.80
1.00
0.90
A1
0.00
0.10
0.01
b
0.35
0.50
0.44
c
0.10
0.20
0.16
D
2.80
3.00
2.90
e
0.95 REF
e1
1.90 REF
E
2.30
2.50
2.40
E1
1.50
1.70
1.65
k
1.20
L
0.30
0.65
0.50
L1
0.30
0.50
0.40
R
0.05
0.15
All Dimensions in mm
L1
E1
E
b
e1
A1
e
R
L
A
k
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23F
X
C
Dimensions
C
X
Y
Y1
Y1
Value
(in mm)
0.95
0.80
1.110
3.000
Y
ZXTN19020CFF
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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ZXTN19020CFF
Document number: DS33676 Rev. 2 - 2
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