VO4154, VO4156 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current FEATURES A 1 6 MT2 • High static dV/dt 5 kV/μs C 2 5 NC • High input sensitivity IFT = 1.6 mA, 2 mA, and 3 mA ZCC* NC 3 • 300 mA on-state current 4 MT1 • Zero voltage crossing detector *Zero crossing circuit i179030_4 21842-1 • 400 V and 600 V blocking voltage V D E • Isolation test voltage 5300 VRMS DESCRIPTION • Compliant to RoHS Directive 2011/65/EU The VO4154 and VO4156 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC packaged in a DIP-6 package. APPLICATIONS High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. • Industrial controls The new phototriac zero crossing family uses a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/μs. AGENCY APPROVALS The VO4154 and VO4156 isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. • cUL - file no. E52744, equivalent to CSA bulletin 5A • Solid-state relays • Office equipment • Consumer appliances • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884) available with option 1 ORDERING INFORMATION V O 4 1 5 # X - PART NUMBER X 0 0 # PACKAGE OPTION DIP-6 Option 6 7.62 mm 10.16 mm T TAPE AND REEL Option 7 > 0.7 mm VDRM 400 AGENCY CERTIFIED/PACKAGE UL, cUL DIP-6 VDRM 600 TRIGGER CURRENT, IFT (mA) 1.6 2 3 1.6 2 3 VO4154D VO4154H VO4154M VO4156D VO4156H VO4156M VO4156M-X006 DIP-6, 400 mil, option 6 VO4154D-X006 VO4154H-X006 VO4154M-X006 VO4156D-X006 VO4156H-X006 SMD-6, option 7 VO4154D-X007T VO4154H-X007T VO4154M-X007T VO4156D-X007T VO4156H-X007T VO4156M-X007T Rev. 1.6, 23-Feb-12 Document Number: 84797 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4154, VO4156 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW 1.33 mW/°C Derate from 25 °C OUTPUT VO4154D/H/M VDRM 400 V VO4156D/H/M VDRM 600 V ITM 300 mA Pdiss 500 mW 6.6 mW/°C VISO 5300 VRMS Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Peak off-state voltage RMS on-state current Total power dissipation Derate from 25 °C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t = 1 min max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Soldering temperature Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 350 IL - Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 - 40 - 20 19623 0 20 40 60 80 100 Tamb - Temperature (°C) Fig. 1 - Recommended Operating Condition Rev. 1.6, 23-Feb-12 Document Number: 84797 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4154, VO4156 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 500 mW Maximum LED junction temperature Tjmax. 125 °C Tjmax. 125 Thermal resistance, junction emitter to board θJEB 150 °C/W Thermal resistance, junction emitter to case θJEC 139 °C/W Thermal resistance, junction detector to board θJDB 78 °C/W Thermal resistance, junction detector to case θJDC 103 °C/W Thermal resistance, junction emitter to junction detector θJED 496 °C/W Thermal resistance, case to ambient θCA 3563 °C/W Maximum output die junction temperature TA θCA Package TC °C θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 TA Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VF 1.2 1.4 V VR = 6 V IR 0.1 10 μA VF = 0 V, f = 1 MHz CI 25 INPUT Forward voltage Reverse current Input capacitance IF = 10 mA pF OUTPUT Repetitive peak off-state voltage Off-state current IDRM = 100 μA VO4154D/H/M VDRM 400 VO4156D/H/M VDRM 600 V V VD = VDRM, IF = 0 A IDRM On-state voltage IT = 300 mA VTM 3 V On-state current PF = 1, VT(RMS) = 1.7 V ITM 300 mA IF = 2 mA, VDRM IDINH 200 μA IH 500 μA IF = rated IFT VIH 20 V VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 5000 V/μs dV/dtcr 8 A/μs Off-state current in inhibit state Holding current Zero cross inhibit voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state 100 μA COUPLER LED trigger current, current required to latch output VD = 3 V Common mode coupling capacitance Capacitance (input to output) f = 1 MHz, VIO = 0 V VO4154D IFT 1.6 mA VO4154H IFT 2 mA mA VO4154M IFT 3 VO4156D IFT 1.6 mA VO4156H IFT 2 mA VO4156M IFT 3 mA CCM 0.01 pF CIO 0.8 pF Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Rev. 1.6, 23-Feb-12 Document Number: 84797 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4154, VO4156 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC68 part 1) MAX. UNIT 55/100/21 Pollution degree (DIN VDE 0109) 2 Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 175 399 VIOTM VIOTM 8000 V VIORM VIORM 890 V PSO PSO 500 mW ISI ISI 250 mA TSI TSI 175 °C Creepage distance 7 mm Crearance distance 7 mm TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IDRM - Leakage Current (nA) 1.5 VF (V) 1.3 1.1 0 °C 25 °C 50 °C 0.9 1000 100 IRDM at 630 V 10 0.7 1 0.1 1.0 10.0 IF (mA) 19660 0 100.0 20008 Fig. 2 - Diode Forward Voltage vs. Forward Current 38 36 34 IR = 10 µA 32 - 60 - 40 - 20 0 20 40 60 ITM - On-State Current (mA) VR (V) 60 80 100 1000 40 100 0 °C 10 25 °C 85 °C 1 1.0 80 100 Temperature (ºC) Fig. 3 - Diode Reverse Voltage vs. Temperature Rev. 1.6, 23-Feb-12 40 Fig. 4 - Leakage Current vs. Ambient Temperature 42 19662 20 TA - Ambient Temperature (°C) 19685 1.5 IF = 2 mA 2.0 2.5 3.0 3.5 VTM - On-State Voltage (V) Fig. 5 - On-State Current vs. On-State Voltage Document Number: 84797 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4154, VO4156 www.vishay.com Vishay Semiconductors 1.4 Normalized IH at 25 °C 85 °C 4500 1.2 4000 25 °C 3500 3000 Normalized IH Output Leakage current (nA) 5000 0 °C 2500 2000 1500 1.0 0.8 0.6 0.4 1000 0.2 500 0 0 200 400 600 Voltage (V) 20009 20 1.0 0.8 0.6 0.4 Normalized IFT at 25 ºC 0.2 0.0 - 60 - 40 - 20 40 60 80 100 18 16 14 12 85 ºC 10 100 ºC 8 6 4 - 40 ºC 2 25 ºC 0 0 20 40 60 10 80 100 Temperature (ºC) 19666 IFT - Trigger Current (mA) 22 1.6 1.2 20 Fig. 9 - Normalized Holding Current vs. Temperature 1.8 1.4 0 Temperature (ºC) 20011 Fig. 6 - Output Off Current (Leakage) vs. Voltage Normalized IFT 0.0 - 60 - 40 - 20 800 20012 Fig. 7 - Normalized Trigger Input Current vs. Temperature 20 30 40 50 60 70 Trigger Pulse Width (µs) Fig. 10 - IFT vs. LED Pulse Width 3.5 3.0 IFT - (mA) 2.5 2.0 1.5 1.0 0.5 0.0 10 100 1000 Turn-On Time (µs) 20010 Fig. 8 - IFT (mA) vs. Turn-On Time (μs) Rev. 1.6, 23-Feb-12 Document Number: 84797 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4154, VO4156 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.30 6.50 ISO method A 8.50 8.70 7.62 typ. 1.22 1.32 1 min. 3.30 3.81 4° typ. 18° 3.30 3.81 0.84 typ. 0.46 0.51 3° to 9° 0.20 0.30 0.84 typ. 7.62 to 8.81 2.54 typ. i178014 Option 6 Option 7 Option 8 7.62 typ. 7.62 typ. 7.62 typ. 3.5 ± 0.3 0.7 min. 4.3 ± 0.3 0.25 ± 0.1 3.5 ± 0.3 0.1 min. 8 min. 2.55 ± 0.25 9.27 min. 0.6 min. 10.3 max. 12.1 max. 10.16 typ. 0.76 R 0.25 2.54 0.76 2.54 R 0.25 1.78 20802-41 8 min. 11.05 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING (example) VO4154 X017 V YWW H 68 Notes • Only options 1, 7, and 8 are reflected in the package marking. • The VDE Logo is only marked on option 1 parts. • Tape and reel suffix (T) is not part of the package marking. Rev. 1.6, 23-Feb-12 Document Number: 84797 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000