Process Introduction 1.5um / 15V Bipolar Process Technology Process features Key Design Rules z z z z z z z z Up-down isolation 7um space from Base to Iso Deep N+ collector plug NPN transistor Lateral PNP transistor Vertical (Substrate) PNP transistor Implant resistor (optional) MOS capacitor (optional) z z Double metal (optional) Applications: motor driver, communication 9 Masks Min. Width/Space(um) Diffusion(DN) 3 Diffusion(others) 4 Contact 1.5x3.5 Metal 3/2 Electrical Specification Specification Device Parameter Min NPN transistor (5.5x5.5 um2 emitter) XBASE-LPNP (Wb=7um ) Typ Max Unit Hfe (Ic=100uA) 50 110 250 - BVceo(Ic=10uA) 15 - - V BVebo(I=10uA) 5.9 6.2 6.5 V Hfe (Ic=10uA) 150 390 800 - BVceo(Ic=10uA) 15 - - V Hfe (lc=10uA) 80 320 700 - BVceo(Ic=10uA) 15 - - V PBASE-R 310 360 390 Ω/□ Implant-R 1.8 2.2 2.6 kΩ/□ C(100x100um2) 8.5 10.8 13.5 pF Vertical (substrate) PNP Sheet Resistance Capacitance (Si3N4) -1-