1.5um, 15V

Process Introduction
1.5um / 15V Bipolar Process Technology
Process features
Key Design Rules
z
z
z
z
z
z
z
z
Up-down isolation
7um space from Base to Iso
Deep N+ collector plug
NPN transistor
Lateral PNP transistor
Vertical (Substrate) PNP transistor
Implant resistor (optional)
MOS capacitor (optional)
z
z
Double metal (optional)
Applications: motor driver, communication
9 Masks
Min. Width/Space(um)
Diffusion(DN)
3
Diffusion(others)
4
Contact
1.5x3.5
Metal
3/2
Electrical Specification
Specification
Device
Parameter
Min
NPN transistor
(5.5x5.5 um2 emitter)
XBASE-LPNP
(Wb=7um )
Typ
Max
Unit
Hfe (Ic=100uA)
50
110
250
-
BVceo(Ic=10uA)
15
-
-
V
BVebo(I=10uA)
5.9
6.2
6.5
V
Hfe (Ic=10uA)
150
390
800
-
BVceo(Ic=10uA)
15
-
-
V
Hfe (lc=10uA)
80
320
700
-
BVceo(Ic=10uA)
15
-
-
V
PBASE-R
310
360
390
Ω/□
Implant-R
1.8
2.2
2.6
kΩ/□
C(100x100um2)
8.5
10.8
13.5
pF
Vertical (substrate) PNP
Sheet Resistance
Capacitance (Si3N4)
-1-
Similar pages