2um, 18V

Process Introduction
2um / 18V Bipolar Process Technology
Process features
Key Design Rules
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Up-down isolation
8um space from Base to Iso
Deep N+ collector plug
NPN transistor
Lateral PNP transistor
Implant resistor (optional)
MOS capacitor
10 Masks
Min. Width/Space(um)
Diffusion
4
Contact
2


Double metal (optional)
Applications: analog, power linear
Metal
3/2
Electrical Specification
Specification
Device
NPN
(5x7um2emitter)
PBASE-LPNP
(Wb=8um )
XBASE-LPNP
(Wb=10um )
Sheet
Resistance(20x200um2)
Capacitance (Si3N4)
Parameter
Min
Typ
Max
Unit
Hfe(Ic=100uA)
80
140
250
-
BVceo(Ic=10uA)
18
35
-
V
BVebo(I=10uA)
6.8
7.3
7.8
V
Hfe(Ic=10uA)
100
250
400
-
BVceo(Ic=10uA)
18
40
-
V
Hfe(Ic=10uA)
200
500
800
-
BVceo(Ic=10uA)
18
40
-
V
PBASE-R
190
215
240
Ω/□
Implant-R
1.84
2.3
2.76
kΩ/□
C(100x100um2)
8.5
10.6
12.7
pF
-1-
Process Introduction
-2-
Process Introduction
-3-
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