AL5802LP

AL5802LP
ADVANCE INFORMATION
NEW PRODUCT
LED DRIVER, 30V, LINEAR, ADJUSTABLE, CURRENT SINK
Description
Pin Assignments
The AL5802LP combines a high-gain NPN transistor with a prebiased NPN transistor to make a simple, small footprint LED driver.
The LED current is set by an external resistor connected from REXT
pin (2) to GND pin (3), and the internal high-gain transistor develops
approximately 0.6V across the external resistor.
The AL5802LP’s open-collector output can operate from 0.8V to 30V
making it suitable for industry standard 5V to 24V power supplies
without additional components.
PWM dimming of the LED current can be achieved by either driving
the BIAS pin (6) with a low impedance voltage source, or driving the
EN pin (4) with an external open-collector NPN transistor or
open-drain N-Channel MOSFET.
Internal Schematic
(Top View)
(Bottom View)
The AL5802LP is available in a U-DFN1616-6 (Type F) package and
is ideal for driving 10mA to 120mA LED currents.
Package: U-DFN1616-6 (Type F)
•
The collector of Q2 is connected to pin 1 and pad 7 which is
on the underside of the package
•
Pad 8 is electrically tied to the collector of Q1 and to the
base of Q2, i.e. it is common with terminal 4
Features
Mechanical Data









Reference Voltage VREXT = 0.65V
-40 to +125°C Operating Temperature Range
0.8V to 30V Open-Collector Output
Negative Temperature Coefficient – Automatically Reduces the
LED Current at High Temperatures
Low Thermal Impedance, Small Footprint DFN1616-6 Package
with Exposed Pads
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)



Case: U-DFN1616-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94-V-0.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.005 grams (Approximate)
Applications



Linear LED Driver
LED Signs
Offline LED Luminaries
Ordering Information (Note 4)
Notes:
Device
Qualification
Packaging
AL5802LP
Commercial
U-DFN1616-6 (Type F)
Tape and Reel
Quantity
Part Number Suffix
3,000/Tape & Reel
-7
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
AL5802LP
Document number: DS37549 Rev. 4 - 2
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AL5802LP
ADVANCE INFORMATION
NEW PRODUCT
Marking Information
102
102 = Product Type Marking Code
Typical Application Circuit
Pin Descriptions
Pin Number
Name
1
OUT
2
REXT
3
GND
4
EN
5
6
N/C
BIAS
Function
Open-Collector LED Driver Output
Current Sense Pin
LED current sensing resistor should be connected from here to GND
Ground Reference Point for Setting LED Current
Enable Pin for PWM Dimming
Provides access to the base of Q2 and the collector of Q1
No Connection
Biases the Open Collector Output Transistor
Functional Block Diagram
Figure 1 Block Diagram
AL5802LP
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NEW PRODUCT
Absolute Maximum Ratings (Note 5)
Symbol
Values
Unit
VOUT
Output Voltage Relative to GND
30
V
VBIAS
BIAS Voltage Relative to GND
30
V
VFB
LED Voltage Relative to GND
6
V
VEN
EN Voltage Relative to GND
6
V
REXT Voltage Relative to GND
6
V
150
mA
VREXT
Characteristics
IOUT
Output Current
TOP
Operating Temperature
-40 to +150
°C
TSTG
Storage Temperature
-55 to +150
°C
Note:
5. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for
extended periods of time may reduce device reliability.
Package Thermal Data
Characteristic
Symbol
Value
PD
0.44
W
RθJA
284
°C/W
Power Dissipation (Note 6) @ TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = +25°C
Unit
Recommended Operating Conditions
Symbol
Min
Max
VBIAS
Supply Voltage Range
4.5
30
VOUT
OUT Voltage Range
0.8
30
ILED
LED Pin Current (Note 7)
10
120
mA
Operating Ambient Temperature Range
-40
+125
°C
TA
Notes:
Parameter
Unit
V
6. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout.
7. Subject to ambient temperature, power dissipation and PCB substrate material selection.
Electrical Characteristics – NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.)
Min
Typ
Max
Unit
V(BR)CEO
Symbol
Collector-Emitter Breakdown Voltage (Notes 8 & 9)
Characteristic
IC = 1.0mA, IB = 0
40
—
—
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
6.0
—
—
V
ICEX
Collector Cut-Off Current (Note 9)
VCE = 30V, VEB(OFF) = 3.0V
—
—
50
nA
IBL
Base Cut-Off Current (Note 9)
VCE = 30V, VEB(OFF) = 3.0V
—
—
50
nA
DC Current Gain
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
40
70
100
—
—
—
—
—
300
—
VCE(SAT)
Collector-Emitter Saturation Voltage (Note 8)
IC = 10mA, IB = 1.0mA
—
—
0.20
V
VBE(SAT)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
0.65
—
0.85
V
VBE(ON)
Base-Emitter Turn-On Voltage
VCE = 1.50V, IC = 2.0mA
0.30
—
1.10
V
hFE
Notes:
Test Condition
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to
the testability of the device changed after packaging multiple dies to form an application circuit.
AL5802LP
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AL5802LP
Symbol
Characteristic
Test Condition
Min
Typ
Max
Unit
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 50μA, IE = 0
30
—
—
V
V(BR)CEO
Collector-Emitter Breakdown Voltage (Note 8)
IC = 1mA, IB = 0
30
—
—
V
V(BR)EBO
Emitter-Base Breakdown Voltage (Note 9)
IE = 50μA, IC = 0
5.0
—
—
V
ICBO
Collector Cut-Off Current
VCB = 30V, IE = 0
—
—
0.5
µA
IEBO
Emitter Cut-Off Current (Note 9)
VEB = 4V, IC = 0
—
—
0.5
µA
VCE(SAT)
Collector-Emitter Saturation Voltage (Note 8)
IC = 10mA, IB = 1mA
—
—
0.3
V
VBE(ON)
Base-Emitter Turn-On Voltage
VCE = 5.0V, IC = 2.0mA
0.30
—
1.10
V
hFE
DC Current Gain (Note 8)
VCE = 5V, IC = 150mA
100
—
—
—
R1
Input Resistance
—
7
10
13
kΩ
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to
the testability of the device changed after packaging multiple dies to form an application circuit.
Thermal Characteristics
Typical Performance Characteristics
100
Vbias = 24V
Iout (mA)
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.)
Vout = 1.4V
50
Vout = 5.4V
0
1
VOUT (V)
Figure 3 Output Current vs. VOUT
AL5802LP
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Figure 4 Output Current vs. Rext
Rext ( Ω)
100
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AL5802LP
ADVANCE INFORMATION
NEW PRODUCT
Typical Performance Characteristics (continued)
VOUT (V)
Figure 6 Output Current vs. VOUT
VOUT (V)
Figure 5 Output Current vs. VOUT
VOUT (V)
Figure 7 Output Current vs. VOUT
VBIAS (V)
Figure 8 Output Current vs. VBIAS
VBIAS (V)
Figure 9 Output Current vs. VBIAS
AL5802LP
Document number: DS37549 Rev. 4 - 2
VBIAS (V)
Figure 10 Output Current vs. VBIAS
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Typical Performance Characteristics (cont.)
VBIAS (V)
Figure 11 Output Current vs. VBIAS
Application Information
The AL5802LP is designed for driving low current LEDs with typical LED current range of 10mA to 100mA. It provides a cost-effective way for
driving low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as
there is no need for external components like inductors, capacitors and switching diodes.
Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by
sensing the voltage across an external resistor REXT. Q1 uses its VBE as a reference to set the voltage across REXT and controls the base current
into Q2. Q2 operates in linear mode to regulate the LED current. The LED current is expressed as follows:
ILED = VBE(Q1) / REXT
From this, for any required LED current, the necessary external resistor REXT can be calculated as follows:
REXT = VBE(Q1) / ILED
Two or more AL5802LP devices can be connected in parallel to construct higher current LED strings as shown in Figure 13.
Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802LP's thermal resistance.
The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string.
VCE(Q2) = VCC – VLED – VBE(Q1)
PD = VCE(Q2) * ILED + ( VCC – VBE(Q2) – VBE(Q1))2 / R1
As the output current of AL5802LP increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported
by the device is dependent upon the properties of the PCB board material, the copper pad areas and the ambient temperature. The maximum
dissipation the device can handle is given as follows:
PD = ( TJ(MAX) - TA) /RθJA
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ADVANCE INFORMATION
NEW PRODUCT
Application Information (continued)
Figure 12 Typical Application Circuit for
Linear Mode Current Sink LED Driver
Figure 13 Application Circuit for Increasing LED Current
PWM dimming can be achieved by driving the EN pin. An external open-collector NPN transistor or open-drain N-channel MOSFET can be used to
drive the EN pin as shown in Figure 14. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal can
be provided by a micro-controller or analog circuitry. Figure 15 is a typical response of LED current vs. PWM duty cycle on the EN pin.
-or-
Figure 14 Application Circuits for LED Driver with PWM Dimming Functionality
AL5802LP
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Application Information (cont.)
60
LED CURRENT (mA)
50
40
30
20
10
0
0
20
40
60
80
100
PWM DUTY CYCLE (%)
Figure 15 Typical LED Current Response vs. PWM Duty Cycle for
REXT = 13Ω at 400Hz PWM Frequency
To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity
protection.
One solution for reverse input polarity protection is to simply use a diode with a low V F in-line with the driver/LED combination. The low VF of the
series connected diode increases the available voltage to the LED stack and dissipates less power. A circuit example is presented in Figure 16
®
using Diodes Inc. SBR (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low VF for its package
size of 1mm x 0.6mm, equivalent to an 0402 chip style package. Other reverse voltage ratings are also available on Diodes Inc.’s website such as
the SBR02U100LP (0.2A/100V) or SBR0220LP (0.2A/20V).
Automotive applications commonly use this method for reverse battery protection.
A second approach, shown in Figure 17, improves upon the method shown in Figure 16. Whereas the method in Figure 16 protects the light
engine, it will not function until the problem has been diagnosed and corrected.
The method shown in Figure 17 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to
function.
The BAS40BRW incorporates four low VF, Schottky diodes into a single package and allows more voltage available for the LED stack and
dissipates less power than standard rectifier bridges.
SDM10U45LP
VS
BAS40BRW
VS
AL5802LP
AL5802LP
RS
RS
Figure 16 Application Circuit for LED Driver
with Reverse Polarity Protection
Figure 17 Application Circuit for LED Driver with
Assured Operation Regardless of Polarity
SBR is a registered trademark of Diodes Incorporated
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ADVANCE INFORMATION
NEW PRODUCT
AL5802LP
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN1616-6 (Type F)
A1
A3
A
Seating Plane
D
D1
D2(2X)
Pin #1 ID
R
E
0.
E2(2x)
10
0
K
e
L
Z(4x)
U-DFN1616-6
(Type F)
Dim Min Max Typ
A
0.45 0.55 0.50
A1
0
0.05 0.02
A3
—
—
0.127
b
0.20 0.30 0.25
D
1.55 1.65 1.60
D1
1.14 1.34 1.24
D2
0.38 0.58 0.48
E
1.55 1.65 1.60
E2
0.54 0.74 0.64
e
—
—
0.50
K
—
—
0.23
L
0.15 0.35 0.25
Z
—
—
0.175
All Dimensions in mm
b
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2
G1
Dimensions
C
G
G1
X
X1
X2
Y
Y1
Y
X1
G
Y1
Y2
Y
Value
(in mm)
0.500
0.150
0.180
0.320
0.580
1.320
0.450
0.700
1.900
C
X
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AL5802LP
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