AL5802LP ADVANCE INFORMATION NEW PRODUCT LED DRIVER, 30V, LINEAR, ADJUSTABLE, CURRENT SINK Description Pin Assignments The AL5802LP combines a high-gain NPN transistor with a prebiased NPN transistor to make a simple, small footprint LED driver. The LED current is set by an external resistor connected from REXT pin (2) to GND pin (3), and the internal high-gain transistor develops approximately 0.6V across the external resistor. The AL5802LP’s open-collector output can operate from 0.8V to 30V making it suitable for industry standard 5V to 24V power supplies without additional components. PWM dimming of the LED current can be achieved by either driving the BIAS pin (6) with a low impedance voltage source, or driving the EN pin (4) with an external open-collector NPN transistor or open-drain N-Channel MOSFET. Internal Schematic (Top View) (Bottom View) The AL5802LP is available in a U-DFN1616-6 (Type F) package and is ideal for driving 10mA to 120mA LED currents. Package: U-DFN1616-6 (Type F) • The collector of Q2 is connected to pin 1 and pad 7 which is on the underside of the package • Pad 8 is electrically tied to the collector of Q1 and to the base of Q2, i.e. it is common with terminal 4 Features Mechanical Data Reference Voltage VREXT = 0.65V -40 to +125°C Operating Temperature Range 0.8V to 30V Open-Collector Output Negative Temperature Coefficient – Automatically Reduces the LED Current at High Temperatures Low Thermal Impedance, Small Footprint DFN1616-6 Package with Exposed Pads Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: U-DFN1616-6 (Type F) Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94-V-0. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.005 grams (Approximate) Applications Linear LED Driver LED Signs Offline LED Luminaries Ordering Information (Note 4) Notes: Device Qualification Packaging AL5802LP Commercial U-DFN1616-6 (Type F) Tape and Reel Quantity Part Number Suffix 3,000/Tape & Reel -7 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. AL5802LP Document number: DS37549 Rev. 4 - 2 1 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Marking Information 102 102 = Product Type Marking Code Typical Application Circuit Pin Descriptions Pin Number Name 1 OUT 2 REXT 3 GND 4 EN 5 6 N/C BIAS Function Open-Collector LED Driver Output Current Sense Pin LED current sensing resistor should be connected from here to GND Ground Reference Point for Setting LED Current Enable Pin for PWM Dimming Provides access to the base of Q2 and the collector of Q1 No Connection Biases the Open Collector Output Transistor Functional Block Diagram Figure 1 Block Diagram AL5802LP Document number: DS37549 Rev. 4 - 2 2 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Absolute Maximum Ratings (Note 5) Symbol Values Unit VOUT Output Voltage Relative to GND 30 V VBIAS BIAS Voltage Relative to GND 30 V VFB LED Voltage Relative to GND 6 V VEN EN Voltage Relative to GND 6 V REXT Voltage Relative to GND 6 V 150 mA VREXT Characteristics IOUT Output Current TOP Operating Temperature -40 to +150 °C TSTG Storage Temperature -55 to +150 °C Note: 5. These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods of time may reduce device reliability. Package Thermal Data Characteristic Symbol Value PD 0.44 W RθJA 284 °C/W Power Dissipation (Note 6) @ TA = +25°C Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = +25°C Unit Recommended Operating Conditions Symbol Min Max VBIAS Supply Voltage Range 4.5 30 VOUT OUT Voltage Range 0.8 30 ILED LED Pin Current (Note 7) 10 120 mA Operating Ambient Temperature Range -40 +125 °C TA Notes: Parameter Unit V 6. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout. 7. Subject to ambient temperature, power dissipation and PCB substrate material selection. Electrical Characteristics – NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.) Min Typ Max Unit V(BR)CEO Symbol Collector-Emitter Breakdown Voltage (Notes 8 & 9) Characteristic IC = 1.0mA, IB = 0 40 — — V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 — — V ICEX Collector Cut-Off Current (Note 9) VCE = 30V, VEB(OFF) = 3.0V — — 50 nA IBL Base Cut-Off Current (Note 9) VCE = 30V, VEB(OFF) = 3.0V — — 50 nA DC Current Gain IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V 40 70 100 — — — — — 300 — VCE(SAT) Collector-Emitter Saturation Voltage (Note 8) IC = 10mA, IB = 1.0mA — — 0.20 V VBE(SAT) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.65 — 0.85 V VBE(ON) Base-Emitter Turn-On Voltage VCE = 1.50V, IC = 2.0mA 0.30 — 1.10 V hFE Notes: Test Condition 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to the testability of the device changed after packaging multiple dies to form an application circuit. AL5802LP Document number: DS37549 Rev. 4 - 2 3 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP Symbol Characteristic Test Condition Min Typ Max Unit V(BR)CBO Collector-Base Breakdown Voltage IC = 50μA, IE = 0 30 — — V V(BR)CEO Collector-Emitter Breakdown Voltage (Note 8) IC = 1mA, IB = 0 30 — — V V(BR)EBO Emitter-Base Breakdown Voltage (Note 9) IE = 50μA, IC = 0 5.0 — — V ICBO Collector Cut-Off Current VCB = 30V, IE = 0 — — 0.5 µA IEBO Emitter Cut-Off Current (Note 9) VEB = 4V, IC = 0 — — 0.5 µA VCE(SAT) Collector-Emitter Saturation Voltage (Note 8) IC = 10mA, IB = 1mA — — 0.3 V VBE(ON) Base-Emitter Turn-On Voltage VCE = 5.0V, IC = 2.0mA 0.30 — 1.10 V hFE DC Current Gain (Note 8) VCE = 5V, IC = 150mA 100 — — — R1 Input Resistance — 7 10 13 kΩ Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to the testability of the device changed after packaging multiple dies to form an application circuit. Thermal Characteristics Typical Performance Characteristics 100 Vbias = 24V Iout (mA) ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.) Vout = 1.4V 50 Vout = 5.4V 0 1 VOUT (V) Figure 3 Output Current vs. VOUT AL5802LP Document number: DS37549 Rev. 4 - 2 4 of 10 www.diodes.com 10 Figure 4 Output Current vs. Rext Rext ( Ω) 100 March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Typical Performance Characteristics (continued) VOUT (V) Figure 6 Output Current vs. VOUT VOUT (V) Figure 5 Output Current vs. VOUT VOUT (V) Figure 7 Output Current vs. VOUT VBIAS (V) Figure 8 Output Current vs. VBIAS VBIAS (V) Figure 9 Output Current vs. VBIAS AL5802LP Document number: DS37549 Rev. 4 - 2 VBIAS (V) Figure 10 Output Current vs. VBIAS 5 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Typical Performance Characteristics (cont.) VBIAS (V) Figure 11 Output Current vs. VBIAS Application Information The AL5802LP is designed for driving low current LEDs with typical LED current range of 10mA to 100mA. It provides a cost-effective way for driving low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there is no need for external components like inductors, capacitors and switching diodes. Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by sensing the voltage across an external resistor REXT. Q1 uses its VBE as a reference to set the voltage across REXT and controls the base current into Q2. Q2 operates in linear mode to regulate the LED current. The LED current is expressed as follows: ILED = VBE(Q1) / REXT From this, for any required LED current, the necessary external resistor REXT can be calculated as follows: REXT = VBE(Q1) / ILED Two or more AL5802LP devices can be connected in parallel to construct higher current LED strings as shown in Figure 13. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802LP's thermal resistance. The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string. VCE(Q2) = VCC – VLED – VBE(Q1) PD = VCE(Q2) * ILED + ( VCC – VBE(Q2) – VBE(Q1))2 / R1 As the output current of AL5802LP increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported by the device is dependent upon the properties of the PCB board material, the copper pad areas and the ambient temperature. The maximum dissipation the device can handle is given as follows: PD = ( TJ(MAX) - TA) /RθJA AL5802LP Document number: DS37549 Rev. 4 - 2 6 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Application Information (continued) Figure 12 Typical Application Circuit for Linear Mode Current Sink LED Driver Figure 13 Application Circuit for Increasing LED Current PWM dimming can be achieved by driving the EN pin. An external open-collector NPN transistor or open-drain N-channel MOSFET can be used to drive the EN pin as shown in Figure 14. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal can be provided by a micro-controller or analog circuitry. Figure 15 is a typical response of LED current vs. PWM duty cycle on the EN pin. -or- Figure 14 Application Circuits for LED Driver with PWM Dimming Functionality AL5802LP Document number: DS37549 Rev. 4 - 2 7 of 10 www.diodes.com March 2016 © Diodes Incorporated AL5802LP ADVANCE INFORMATION NEW PRODUCT Application Information (cont.) 60 LED CURRENT (mA) 50 40 30 20 10 0 0 20 40 60 80 100 PWM DUTY CYCLE (%) Figure 15 Typical LED Current Response vs. PWM Duty Cycle for REXT = 13Ω at 400Hz PWM Frequency To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity protection. One solution for reverse input polarity protection is to simply use a diode with a low V F in-line with the driver/LED combination. The low VF of the series connected diode increases the available voltage to the LED stack and dissipates less power. A circuit example is presented in Figure 16 ® using Diodes Inc. SBR (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low VF for its package size of 1mm x 0.6mm, equivalent to an 0402 chip style package. Other reverse voltage ratings are also available on Diodes Inc.’s website such as the SBR02U100LP (0.2A/100V) or SBR0220LP (0.2A/20V). Automotive applications commonly use this method for reverse battery protection. A second approach, shown in Figure 17, improves upon the method shown in Figure 16. Whereas the method in Figure 16 protects the light engine, it will not function until the problem has been diagnosed and corrected. The method shown in Figure 17 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to function. The BAS40BRW incorporates four low VF, Schottky diodes into a single package and allows more voltage available for the LED stack and dissipates less power than standard rectifier bridges. SDM10U45LP VS BAS40BRW VS AL5802LP AL5802LP RS RS Figure 16 Application Circuit for LED Driver with Reverse Polarity Protection Figure 17 Application Circuit for LED Driver with Assured Operation Regardless of Polarity SBR is a registered trademark of Diodes Incorporated AL5802LP Document number: DS37549 Rev. 4 - 2 8 of 10 www.diodes.com March 2016 © Diodes Incorporated ADVANCE INFORMATION NEW PRODUCT AL5802LP Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN1616-6 (Type F) A1 A3 A Seating Plane D D1 D2(2X) Pin #1 ID R E 0. E2(2x) 10 0 K e L Z(4x) U-DFN1616-6 (Type F) Dim Min Max Typ A 0.45 0.55 0.50 A1 0 0.05 0.02 A3 — — 0.127 b 0.20 0.30 0.25 D 1.55 1.65 1.60 D1 1.14 1.34 1.24 D2 0.38 0.58 0.48 E 1.55 1.65 1.60 E2 0.54 0.74 0.64 e — — 0.50 K — — 0.23 L 0.15 0.35 0.25 Z — — 0.175 All Dimensions in mm b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2 G1 Dimensions C G G1 X X1 X2 Y Y1 Y X1 G Y1 Y2 Y Value (in mm) 0.500 0.150 0.180 0.320 0.580 1.320 0.450 0.700 1.900 C X AL5802LP Document number: DS37549 Rev. 4 - 2 9 of 10 www.diodes.com March 2016 © Diodes Incorporated ADVANCE INFORMATION NEW PRODUCT AL5802LP IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com AL5802LP Document number: DS37549 Rev. 4 - 2 10 of 10 www.diodes.com March 2016 © Diodes Incorporated