DMTH4005SPSQ

DMTH4005SPSQ
Green
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
BVDSS
Features
ID
TC = +25°C
(Note 10)
RDS(ON) Max
3.7mΩ @ VGS = 10V
40V
100A








Rated to +175°C – Ideal For High Ambient Temperature
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
And Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:







Engine Management Systems
Body Control Electronics
DC-DC Converters

®
Case: POWERDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
®
POWERDI 5060-8
Pin1
Top View
S
D
S
D
S
D
G
D
Top View
Pin Configuration
Internal Schematic
Bottom View
Ordering Information (Note 5)
Part Number
DMTH4005SPSQ-13
Notes:
Case
®
POWERDI 5060-8
Packaging
2,500 /Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
= Manufacturer’s Marking
H4005SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 to 53)
H4005SS
YY WW
S
S
S
G
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH4005SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Continuous Drain Current (Note 6)
Continuous Drain Current (Notes 7 & 10)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.6mH
Avalanche Energy, L=0.6mH
ID
Value
40
±20
20.9
17.5
Unit
V
V
ID
100
100
A
IS
IDM
IAS
EAS
100
150
21
132.3
A
A
A
mJ
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Electrical Characteristics
TA= +25°C
TC = +25°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
40
V
VGS = 0V, ID = 1mA
IDSS
1
μA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
—
—
—
—
Zero Gate Voltage Drain Current
±100
nA
VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
2
—
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
—
2.9
3.7
mΩ
VGS = 10V, ID = 50A
0.88
—
V
VGS = 0V, IS = 50A
3,062
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
VDS = 20V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 20V, ID = 50A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ON CHARACTERISTICS (Note 8)
Diode Forward Voltage
VSD
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Notes:
—
—
—
—
—
—
—
—
—
—
—
—
—
902.2
179.2
0.67
49.1
10.3
13
8.7
6.8
18.6
7.3
31.8
26.5
ns
nC
IF = 50A, di/dt = 100A/μs
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH4005SPSQ
30
100.0
VGS = 10.0V
VDS = 6.0V
VGS = 5.0V
25
VGS = 6.0V
80.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
90.0
70.0
60.0
50.0
VGS = 4.5V
40.0
30.0
20.0
VGS = 3.8V
10.0
125℃
150℃
10
85℃
175℃
25℃
-55℃
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
5.00
4.50
VGS = 6.0V
4.00
3.50
3.00
VGS = 10.0V
2.50
2.00
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current and
Gate Voltage
30
0.006
VGS = 10V
175℃
0.005
150℃
125℃
0.004
85℃
0.003
25℃
0.002
-55℃
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ)
15
5
VGS = 4.0V
0.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
20
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
5
20
16
ID = 20A
12
ID = 50A
8
4
0
2
4
6
8
10
12
14
16
18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
2
1.8
1.6
VGS = 10V, ID = 50A
1.4
1.2
VGS = 6V, ID = 50A
1
0.8
0.6
0.4
0.001
0
10
20
30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current and
Temperature
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
3 of 7
www.diodes.com
-50
-25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
November 2015
© Diodes Incorporated
0.01
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMTH4005SPSQ
0.008
VGS = 6V, ID = 50A
0.006
0.004
VGS = 10V, ID = 50A
0.002
0
-50
3.2
3
2.8
2.4
2.2
ID = 250μA
2
1.8
1.6
1.4
1.2
1
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
-50
-25
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Threshold Variation vs. Temperature
10000
f = 1MHz
90
C iss
CT , JUNCTION CAPACITANCE (pF)
VGS = 0V
80
70
60
50
40
TA = 85oC
TA = 125oC
30
TA = 25oC
TA = 150oC
20
TA = 175oC
10
TA = -55oC
1000
Crss
10
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
0
5
10
15
20
25
30
35
40
, DRAIN-SOURCE VOLTAGE (V)
VVDSDS
, DRAIN-SOURCE
VOLTAGE (V)
Figure 11 Typical Junction Capacitance
Figure 10 Typical Junction Capacitance
1000
10
R DS(on)
Limited
8
PW = 10µs
PW = 1µs
100
ID, DRAIN CURRENT (A)
VDS = 20V
I D = 50A
6
4
2
0
Coss
100
0
VGS GATE THRESHOLD VOLTAGE (V)
ID = 1mA
2.6
-25
100
IS, SOURCE CURRENT (A)
3.4
0
10
20
30
40
Qg , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
50
4 of 7
www.diodes.com
PW = 1s
PW = 100ms
PW = 10ms
10
PW = 1ms
PW = 100µs
1 TJ (m ax ) = 175°C
TC = 25°C
.1
.1
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
November 2015
© Diodes Incorporated
DMTH4005SPSQ
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
RθJC(t) = r(t) * RθJC
RθJC = 1℃/W
Duty Cycle, D = t1 / t2
D=0.005
D=Single Pulse
0.001
1E-06
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
5 of 7
www.diodes.com
1
10
November 2015
© Diodes Incorporated
DMTH4005SPSQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI®5060-8
D
Detail A
D1
0(4X)
c
A1
E1 E
e
01 (4X)
1
b (8X)
e/2
1
L
b2 (4X)
D3
A
K
D2
E3 E2
M
b3 (4X)
M1
Detail A
L1
G
POWERDI®5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0.00
0.05

b
0.33
0.51
0.41
b2
0.200
0.350 0.273
b3
0.40
0.80
0.60
c
0.230
0.330 0.277
D
5.15 BSC
D1
4.70
5.10
4.90
D2
3.70
4.10
3.90
D3
3.90
4.30
4.10
E
6.15 BSC
E1
5.60
6.00
5.80
E2
3.28
3.68
3.48
E3
3.99
4.39
4.19
e
1.27 BSC
G
0.51
0.71
0.61
K
0.51


L
0.51
0.71
0.61
L1
0.100
0.200 0.175
M
3.235
4.035 3.635
M1
1.00
1.40
1.21
Θ
10º
12º
11º
Θ1
6º
8º
7º
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI®5060-8
X4
Y2
X3
Y3
Y5
Y1
X2
Y4
X1
Y7
Y6
G1
C
X
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
G
Y(4x)
6 of 7
www.diodes.com
Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
November 2015
© Diodes Incorporated
DMTH4005SPSQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMTH4005SPSQ
Document number: DS38159 Rev.1 - 2
7 of 7
www.diodes.com
November 2015
© Diodes Incorporated
Similar pages