Download Datasheet

TS110-8
High surge voltage 1.25 A SCR for circuit breaker
Datasheet - production data
Description
$
Thanks to highly sensitive triggering levels, the
TS110-8 series is suitable for circuit breaker
applications where the available gate current is
limited.
*
.
The 1250 V direct surge voltage capability of the
TS110-8 enables high robustness of the whole
circuit breaker. The low leakage current of the
TS110-8 reduces power consumption over the
entire lifetime of the circuit breaker. The high
off-state immunity (200 V/µs) insures the non
tripping of the breaker in case of electrical fast
transient (EFT) on the mains.
$
*
.
*
60%IODW/
.
$
$
*
.
72ZLWK ³*$.´ SLQRXW
72ZLWK ³.*$´ SLQRXW
*
The TS110-8 is available in through-hole TO-92
package with GAK and KGA pinout and in
SMBflat-3L package.
Table 1. Device summary
Features
• On-state rms current, 1.25 A
• Repetitive peak off-state voltage, 800 V
• Non-repetitive direct surge peak off-state
voltage, 1250 V
Symbol
Value
Unit
IT(RMS)
1.25
A
VDRM, V RRM
800
V
VDSm, V RSM
1250, 900
V
IGT
100
µA
Tj
125
°C
• Non-repetitive reverse surge peak off-state
voltage, 900 V
• Triggering gate current, 100 µA
• High off-state immunity: 200 V/µs
• ECOPACK®2 compliant component
Applications
• GFCI (Ground Fault Circuit Interrupter)
• AFCI (Arc Fault Circuit Interrupter)
• RCD (Residual Current Device)
• RCBO (Residual Current circuit Breaker with
Overload protection)
• AFDD (Arc Fault Detection Device)
October 2014
This is information on a product in full production.
DocID026589 Rev 1
1/10
www.st.com
Characteristics
1
TS110-8
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
Average on-state current
(180° conduction angle)
SMBflat-3L
Tc = 109 °C
TO-92
TI = 53 °C
SMBflat-3L
Tc = 109 °C
tp = 10 ms
ITSM
dI/dt
Tl = 53 °C
tp = 8.3 ms
Non repetitive surge peak on-state current
I²t
TO-92
On-state rms current (180° conduction angle)
Value
Unit
1.25
A
0.8
A
21
Tj initial = 25 °C
20
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges
tp = 10 ms
I²t Value for fusing
tp = 10 ms, 25 °C
2
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 50 Hz, 125 °C
100
Tamb = 90 °C
A
25 times 12 A
25 times 16 A
A2S
A/µs
Non repetitive critical current rate of rise at break-over, see Figure 17, VD > VDSm
200
VDRM,
VRRM
Repetitive peak off-state AC voltage, RGK = 220 Ω
Tj = 125 °C
800
V
VDSm
Non-repetitive direct surge peak off-state voltage,
RGK = 220 Ω
tp = 10 ms
Tj = 25 °C
1250
V
VRSM
Non-repetitive reverse surge peak off-state
voltage, RGK = 220 Ω
tp = 10 ms
Tj = 25 °C
900
V
Peak gate current
tp = 20 µs
Tj = 125 °C
1.2
A
Tj = 125 °C
0.2
W
IGM
PG(AV)
Tstg
Tj
Average gate power dissipation
Storage junction temperature range
- 40 to + 150
Operating junction temperature range
- 40 to + 125
°C
Table 3. Electrical characteristics
Symbol
IGT
Test conditions
Value
Unit
Min.
1
Max.
100
Max.
0.8
V
µA
VD = 12 V, R L = 140Ω
Tj = 25 °C
VGT
VGD
VD = VDRM, RL = 33 kΩ, RGK = 220 Ω
Tj = 125 °C
Min.
0.1
V
VRG
IRG = 2 mA
Tj = 25 °C
Min.
7.5
V
IH
IT = 50 mA, RGK = 220 Ω
Tj = 25 °C
Max.
12
mA
IL
IG = 5 mA, RGK = 220 Ω
Tj = 25 °C
Max.
12
mA
VD = 67% VDRM, RGK = 220 Ω
Tj = 125 °C
Min.
200
V/µs
dV/dt
2/10
DocID026589 Rev 1
TS110-8
Characteristics
Table 4. Static electrical characteristics
Symbol
Test conditions
Value
Unit
VTM
ITM = 2.5 A, tp = 380 µs
Tj = 25 °C
Max.
1.6
V
VT0
Threshold voltage
Tj = 125 °C
Max.
0.95
V
RD
Dynamic resistance
Tj = 125 °C
Max.
220
mΩ
1
µA
100
µA
IDRM
IRRM
Tj = 25 °C
VD = VDRM / VRRM, R GK = 220 Ω
Max.
Tj = 125 °C
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-l)
Junction to leads (DC)
Rth(j-a)
Junction to ambient (DC)
Rth(j-c)
Junction to case (DC)
S = 5 cm
Į ƒ
TO-92
160
SMBflat-3L
75
SMBflat-3L
14
,7
$
$9
72
Į ƒ
Į ƒ
65
Figure 2. Average and DC on-state current
versus lead temperature (TO-92)
Į '&
TO-92
Unit
°C/W
2
Figure 1. Maximum average power dissipation
versus average on-state current
3:
Value
Į ƒƒƒƒƒ'&
Į ƒ
Į ƒ
ƒ
7/ƒ&
,7$9 $
Į
Figure 3. Average and DC on-state current
versus case temperature (SMBflat-3L)
Figure 4. Average and DC on-state current
versus ambient temperature
,7
$
$9
IT(AV)(A)
1.4
60%IODW/
'&
a = 30°, 60°, 90°, 120°, 180°, DC
SMBflat-3L
1.2
60%IODW/
1.0
Į ƒ
0.8
72
'&
0.6
0.4
72
Į ƒ
0.2
Tc (°C)
0
25
50
7Dƒ&
0.0
75
100
125
DocID026589 Rev 1
3/10
10
Characteristics
TS110-8
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 6. Typical thermal resistance junction to
ambient versus copper surface under anode
(epoxy FR4, Cuth = 35 µm)
K = [Zth(j-a)/Rth(j-a)]
1.00
TO-92
5WKMDƒ&:
60%IODW/
SMBflat-3L
Copper surface
area = 5cm²
0.10
Tp (s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
,*7
9*7>[email protected]*7 >7M ƒ&@
,*7>7M@,*7 >7M ƒ&@
7 ƒ&
M
, , >7 @, , >7 ƒ&@
+ / M + / M
Figure 8. Relative variation of latching and
holding current versus junction temperature
(typical values)
9*7
1.0E+03
Figure 7. Relative variation of gate trigger
current and trigger voltage versus junction
temperature (typical values)
6FXFPð
,+DQG,/
7 ƒ&
M
Figure 9. Relative variation of holding current Figure 10. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus junction temperature (typical values)
2.5
IH [RGK] / IH [RGK = 220 Ω]
dV/dt [Tj] / dV/dt [Tj = 125°C]
10
VD = 0.67 X VDRM
RGK = 220 Ω
9
8
2.0
7
6
1.5
5
4
1.0
3
2
0.5
1
RGK (KΩ)
1.E-01
4/10
Tj (°C)
0
0.0
1.E+00
1.E+01
20
DocID026589 Rev 1
40
60
80
100
120
TS110-8
Characteristics
Figure 11. Relative variation of dV/dt immunity Figure 12. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) versus gate-cathode capacitor (typical values)
10.00
dV/dt [RGK] / dV/dt [RGK = 220 Ω]
dV/dt [CGK] / dV/dt [CGK = 100 pF]
5.0
VD = 0.67 X VDRM
Tj = 125 °C
4.5
VD = 0.67 X VDRM
Tj = 125 °C
RGK = 220 Ω
4.0
3.5
3.0
1.00
2.5
2.0
1.5
1.0
0.5
RGK (Ω)
0.10
100
200
300
400
500
600
700
Figure 13. On-state characteristics (maximum
values)
100.0
CGK (nF)
0.0
ITM (A)
10.0
Tj = 125 °C
1.0
Tj = 125 °C
Vto = 0.95 V
Rd = 220 mΩ
Tj = 25 °C
VTM (V)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
Figure 14. Surge peak on-state current versus
number of cycles
,760$
1RQUHSHWLWLYH7M ƒ&
WS PV
2QHF\FOH
60%IODW/UHSHWLWLYH7 ƒ&
D
72UHSHWLWLYH7 ƒ&
D
1XPEHURIF\FOHV
Figure 15. Non repetitive surge peak on-state current
,
$
760
)RUDVLQXVRLGDOSXOVHZLWKZLGWKPV
7 LQLWLDO ƒ&
M
,760
WSPV
DocID026589 Rev 1
5/10
10
AC line transient voltage ruggedness
2
TS110-8
AC line transient voltage ruggedness
In comparison with standard SCRs, the TS110-8 is self-protected against over-voltage. The
TS110-8 switch can safely withstand AC line direct surge voltages by switching to the on
state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The
load limits the current through the TS110-8. The self-protection against over-voltage is
based on an overvoltage crowbar technology. This safety feature works even with high
turn-on current ramp up.
Figure 16 represents the TS110-8 in a test environment. It is used to stress the TS110-8
switch according to the IEC 61000-4-5 standard conditions. The TS110-8 folds back safely
to the on state as shown in Figure 17.
The TS110-8 recovers its blocking voltage capability after the direct surge and the next zero
current crossing. Such a non repetitive test can be done at least 10 times.
Figure 16. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards
6XUJHJHQHUDWRU
0RGHORIWKHORDG
)LOWHULQJXQLW
5
5
ȍ
ȍ
/ —+
76
&,1 Q)
$&0DLQV
97
,7
ȍ Q)
Figure 17. Typical current and voltage waveforms across the TS110-8 during
IEC 61000-4-5 standard test
9SHDN 9 '6P
—VYROWDJHVXUJH
9
,SHDN $
,
G,GW $—V
6/10
DocID026589 Rev 1
TS110-8
3
Package information
Package information
•
Epoxy meets UL94, V0
•
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 18. TO-92 dimensions (definitions)
A
a
B
C
F
D
E
Table 6. TO-92 dimensions (values)
Dimensions
Ref.
Millimeters
Min.
A
Typ.
Inches
Max.
Min.
1.35
B
Typ.
0.053
4.70
C
Max.
0.185
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.5
0.019
For ammopack packing information, please contact your sales representative.
DocID026589 Rev 1
7/10
10
Package information
TS110-8
Figure 19. SMBflat-3L dimensions (definitions)
A
c
e
D
b 2x
L2 2x
L 2x
L1
E E1
L1
L
L2
b4
Table 7. SMBflat-3L dimensions (values)
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
A
0.90
1.10
0.035
0.043
b
0.35
0.65
0.014
0.026
b4
1.95
2.20
0.07
0.087
c
0.15
0.40
0.006
0.016
D
3.30
3.95
0.130
0.156
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.156
0.181
L
0.75
1.50
0.030
0.059
L1
0.40
0.016
L2
0.60
0.024
e
1.60
0.063
Figure 20. SMBflat-3L footprint dimensions
5.84
(0.230)
0.51
(0.020)
2.07
(0.082)
2.07
(0.082)
0.51
(0.020)
1.20
(0.047)
3.44
(0.136)
millimeters
(inches)
8/10
Max.
DocID026589 Rev 1
1.20
(0.047)
TS110-8
4
Ordering information
Ordering information
Figure 21. Ordering information scheme
TS 1 10 - 8
A1 (-AP)
Sensitive SCR series
Current (rms)
1 = 1.25 A
Gate sensitivity
10 = 100 μA
Voltage
8 = 800 V
Package
A1 = TO-92 with “GAK” pinout
A2 = TO-92 with “KGA” pinout
UF = SMBflat-3L
Packing mode
-AP = Ammopack (TO_92)
Blank = Bulk (TO-92), 13” tape and reel (SMBflat-3L)
Table 8. Ordering information
Order code
Marking
TS110-8A1
Package
Weight
T0-92
200 mg
TS110-8
TS110-8A1-AP
TS110-8
TS110-8A2
TS110-8
T0-92
5
TS110-8A2-AP
TS110-8
TS110-8UF
TS110-8
SMBflat-3L
Base qty.
Delivery mode
2500
Bulk
2000
Ammopack
2500
Bulk
2000
Ammopack
5000
Tape and reel 13”
200 mg
47 mg
Revision history
Table 9. Document revision history
Date
Revision
13-Oct-2014
1
Changes
Initial release.
DocID026589 Rev 1
9/10
10
TS110-8
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
10/10
DocID026589 Rev 1
Similar pages