elm14404aa

Single N-channel MOSFET
ELM14404AA-N
■General description
■Features
ELM14404AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=30V
Id=8.5A (Vgs=10V)
Rds(on) < 24mΩ (Vgs=10V)
Rds(on) < 30mΩ (Vgs=4.5V)
Rds(on) < 48mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
8.5
7.1
60
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
A
1
A
2
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
31
Max.
40
Unit
°C/W
59
16
75
24
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
5
6
GATE
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14404AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Rds(on)
Gfs
Vsd
0.002
1.000
5.000
μA
100
nA
1.0
1.4
V
A
20.5
24.0
30.0
36.0
25.0
40.0
30.0
48.0
mΩ
mΩ
1.00
S
V
4.3
A
1030
pF
97
71
1.4
3.6
pF
pF
Ω
9.70
12.00
nC
Ta=55°C
0.7
40
Ta=125°C
Vgs=4.5V, Id=8.5A
Vgs=2.5V, Id=5A
Vds=5V, Id=5A
Is=1A, Vgs=0V
Ciss
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
10
16
0.71
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=10V, Id=8.5A
Static drain-source on-resistance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
857
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
Vgs=4.5V, Vds=15V, Id=8.5A
1.63
3.10
mΩ
nC
nC
td(on)
3.3
5.0
ns
tr
Vgs=10V, Vds=15V
td(off) RL=1.8Ω, Rgen=6Ω
4.7
26.0
7.0
39.0
ns
ns
4.1
15.0
8.6
6.2
20.0
12.0
ns
ns
nC
tf
trr
Qrr
If=5A, dIf/dt=100A/μs
If=5A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM14404AA-N
■Typical electrical and thermal characteristics
30
20
10V
3V
25
2.5V
Id(A)
20
Id (A)
Vds=5V
16
4.5V
15
12
125°C
8
10
25°C
2V
4
5
Vgs=1.5V
0
0
0
1
2
3
4
5
0
Vds (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
Normalized On-Resistance
1.8
50
Rds(on) (m� )
1
Vgs(Volts)
Figure 2: Transfer Characteristics
60
Vgs=2.5V
40
30
Vgs=4.5V
20
Vgs=10V
10
1.6
Vgs=4.5V
1.4
Vgs=10V
1.2
Vgs=2.5V
1
0.8
0
5
10
15
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
1.0E+01
90
1.0E+00
80
70
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
Id=5A
1.0E-01
125°C
60
Is (A)
Rds(on) (m� )
0.5
50
125°C
1.0E-02
1.0E-03
25°C
40
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1.0E-04 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
30
25°C
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
Single N-channel MOSFET
ELM14404AA-N
5
1200
Capacitance (pF)
4
Vgs (Volts)
1400
Vds=15V
Id=8.5A
3
2
1000
600
400
1
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
Power (W)
10ms
0.1s
1.0
1s
10s
DC
1
10
100
Z�ϕα Normalized Transient
Thermal Resistance
30
30
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
25
Tj(max)=150°C
Ta=25°C
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
10
0.1
0.1
15
40
1ms
10.0
10
50
Tj(max)=150°C
Ta=25°C
100�s
5
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
Rds(on)
limited
Crss
Coss
200
0
Id (Amps)
Ciss
800
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT
OR USES AS CRITICAL
D
0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
TonIMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
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