elm14406aa

Single N-channel MOSFET
ELM14406AA-N
■General description
■Features
ELM14406AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=30V
Id=11.5A (Vgs=10V)
Rds(on) < 14mΩ (Vgs=10V)
Rds(on) < 16.5mΩ (Vgs=4.5V)
Rds(on) < 26mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Repetitive avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
11.5
Id
A
1
A
2
Idm
9.6
80
Iav
25
A
2, 5
Eav
78
3.0
mJ
2, 5
Pd
Tj, Tstg
W
2.1
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Max.
40
Unit
°C/W
48
12
65
16
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
Typ.
23
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single N-channel MOSFET
ELM14406AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Rds(on)
Gfs
Vsd
0.003
1.000
5.000
μA
100
nA
1.0
1.5
V
A
11.5
14.0
16.0
19.2
13.5
19.5
16.5
26.0
mΩ
mΩ
1.00
S
V
4.5
A
2300
pF
201
142
0.8
1.8
pF
pF
Ω
18.0
24.0
nC
Ta=55°C
0.8
60
Ta=125°C
Vgs=4.5V, Id=10A
Vgs=2.5V, Id=8A
Vds=5V, Id=10A
Is=10A, Vgs=0V
Ciss
Coss
Crss
Rg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Body diode reverse recovery time
Body diode reverse recovery charge
V
25
38
0.83
Is
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
30
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Vgs=10V, Id=12A
Static drain-source on-resistance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
1630
Vgs=0V, Vds=15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Qg
Vgs=4.5V, Vds=15V, Id=11.5A
2.5
5.5
mΩ
nC
nC
td(on)
4.0
6.0
ns
tr
Vgs=10V, Vds=15V
td(off) RL=1.2Ω, Rgen=3Ω
5.0
32.0
7.5
50.0
ns
ns
5.0
18.7
12.5
10.0
24.0
15.0
ns
ns
nC
tf
trr
Qrr
If=10A, dIf/dt=100A/μs
If=10A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM14406AA-N
■Typical electrical and thermal characteristics
50
10V
2.5V
3V
40
20
30
15
20
2V
0
1
2
3
4
Vds (Volts)
Fig 1: On-Region Characteristics
25°C
5
Vgs=1.5V
0
125°C
10
10
0
5
0
30
0.5
1.5
2
2.5
Vgs(Volts)
Figure 2: Transfer Characteristics
Id=10A
3
Normalized On-Resistance
20
10
0
5
Vgs=2.5V
1.2
Vgs=10V
0
Vgs=4.5V
1.4
Vgs=4.5V
15
Vgs=10V
1.6
Vgs=2.5V
5
1
0.8
10
15
20
25
30
Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
40
Id=10A
Vgs=0V
1.0E+00
30
125°C
1.0E-01
125°C
Is (A)
Rds(ON) (m� )
1
1.8
25
Rds(on) (m� )
Vds=5V
25
Id(A)
Id (A)
30
4.5V
1.0E-02
20
25°C
1.0E-03
25°C
10
1.0E-04
0
0.00
1.0E-05
2.00
4.00
6.00
8.00
10.00
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
0.0
0.2
0.4 Vsd (Volts)
0.6
0.8
1.0
Figure 6: Body-Diode Characteristics
1.2
Single N-channel MOSFET
ELM14406AA-N
5
2250
2000
Capacitance (pF)
4
Vgs (Volts)
2500
Vds=15V
Id=11.5A
3
2
1
1750
Ciss
1500
1250
1000
750
Coss
Crss
500
250
0
0
4
8
12
16
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
24
0
100.0
Rds(on)
limited
1ms
10.0
Power (W)
Id (Amps)
0.1s
1s
Z�ja Normalized Transient
Thermal Resistance
1
10
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
Tj(max)=150°C
Ta=25°C
30
20
0
0.001
DC
0.1
0.1
30
10
10s
Tj(max)=150°C
Ta=25°C
15
20
25
Vds (Volts)
Figure 8: Capacitance Characteristics
40
10ms
1.0
10
50
10�s
100�s
5
D=T on/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
T
1
10
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
4-4
100
1000
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